Patents by Inventor Maximilian Roesch

Maximilian Roesch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150187879
    Abstract: A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed.
    Type: Application
    Filed: March 9, 2015
    Publication date: July 2, 2015
    Inventors: Oliver HAEBERLEN, Franz HIRLER, Maximilian ROESCH
  • Patent number: 8975696
    Abstract: A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: March 10, 2015
    Assignee: Infineon Technologies AG
    Inventors: Oliver Haeberlen, Franz Hirler, Maximilian Roesch
  • Publication number: 20150048445
    Abstract: A semiconductor chip has a semiconductor body with a bottom side and a top side arranged distant from the bottom side in a vertical direction, an active and a non-active transistor region, a drift region formed in the semiconductor body, a contact terminal for externally contacting the semiconductor chip, and a plurality of transistor cells formed in the semiconductor body. Each of the transistor cells has a first electrode. Each of a plurality of connection lines electrically connects another one of the first electrodes to the contact terminal pad at a connecting location of the respective connection line. Each of the connection lines has a resistance section that is formed of at least one of: a locally reduced cross-sectional area of the connection line section; and a locally increased specific resistance. Each of the connecting locations and each of the resistance sections is arranged in the non-active transistor region.
    Type: Application
    Filed: August 19, 2013
    Publication date: February 19, 2015
    Inventors: Gerhard Noebauer, Ralf Siemieniec, Maximilian Roesch, Martin Poelzl
  • Patent number: 8487370
    Abstract: A semiconductor device includes a semiconductor body including a trench with first and second opposing sidewalls. A first electrode is arranged in a lower portion of the trench and a second electrode in an upper portion of the trench. A dielectric structure is arranged in the trench, including a first portion between the electrodes. The first portion includes, in sequence along a lateral direction from the first sidewall to the second sidewall, a first part including a first dielectric material, a second part including a second dielectric material selectively etchable to the first dielectric material, a third part including the first dielectric material, the first dielectric material of the third part being continuously arranged along a vertical direction from a top side of the first electrode to a bottom side of the second electrode, a fourth part including the second dielectric material and a fifth part including the first dielectric material.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: July 16, 2013
    Assignee: Infineon Technologies Austria AG
    Inventors: Oliver Blank, Ralf Siemieniec, Martin Poelzl, Maximilian Roesch
  • Patent number: 8362551
    Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: January 29, 2013
    Assignee: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlein, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
  • Publication number: 20120153386
    Abstract: A semiconductor component is disclosed. One embodiment includes a semiconductor body including a first semiconductor layer having at least one active component zone, a cell array with a plurality of trenches, and at least one cell array edge zone. The cell array edge zone is only arranged in an edge region of the cell array, adjoining at least one trench of the cell array, and being at least partially arranged below the at least one trench in the cell array.
    Type: Application
    Filed: December 19, 2011
    Publication date: June 21, 2012
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Franz Hirler, Ralf Siemieniec, Christian Geissler, Oliver Blank, Maximilian Roesch
  • Patent number: 8114743
    Abstract: An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: February 14, 2012
    Assignee: Infineon Technologies Austria AG
    Inventors: Uli Hiller, Oliver Blank, Ralf Siemieniec, Maximilian Roesch
  • Publication number: 20120025303
    Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
    Type: Application
    Filed: October 11, 2011
    Publication date: February 2, 2012
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlen, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
  • Publication number: 20120025304
    Abstract: A semiconductor device includes a semiconductor body including a trench with first and second opposing sidewalls. A first electrode is arranged in a lower portion of the trench and a second electrode in an upper portion of the trench. A dielectric structure is arranged in the trench, including a first portion between the electrodes. The first portion includes, in sequence along a lateral direction from the first sidewall to the second sidewall, a first part including a first dielectric material, a second part including a second dielectric material selectively etchable to the first dielectric material, a third part including the first dielectric material, the first dielectric material of the third part being continuously arranged along a vertical direction from a top side of the first electrode to a bottom side of the second electrode, a fourth part including the second dielectric material and a fifth part including the first dielectric material.
    Type: Application
    Filed: July 30, 2010
    Publication date: February 2, 2012
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Oliver Blank, Ralf Siemieniec, Martin Poelzl, Maximilian Roesch
  • Patent number: 8093655
    Abstract: An integrated circuit including a field effect controllable trench transistor having two-control electrodes is disclosed. One embodiment provides a trench having a first control electrode and a second control electrode. A first electrical line is provided in an edge structure for electrically contact-connecting second control electrode.
    Type: Grant
    Filed: June 8, 2007
    Date of Patent: January 10, 2012
    Assignee: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Maximilian Roesch, Ralf Siemieniec
  • Publication number: 20110284958
    Abstract: A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed.
    Type: Application
    Filed: May 16, 2011
    Publication date: November 24, 2011
    Inventors: Oliver HAEBERLEN, Franz HIRLER, Maximilian ROESCH
  • Patent number: 8044459
    Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
    Type: Grant
    Filed: November 10, 2008
    Date of Patent: October 25, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlen, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
  • Publication number: 20110076817
    Abstract: An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.
    Type: Application
    Filed: December 7, 2010
    Publication date: March 31, 2011
    Applicant: Infineon Technologies Austria AG
    Inventors: Uli Hiller, Oliver Blank, Ralf Siemieniec, Maximilian Roesch
  • Patent number: 7880226
    Abstract: An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: February 1, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Uli Hiller, Oliver Blank, Ralf Siemieniec, Maximilian Roesch
  • Patent number: 7833862
    Abstract: A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above the field electrode, the second material being selectively etchable to the first isolating material, a gate dielectric on the sidewall in an upper portion of the trench and a gate electrode in the upper portion of the trench.
    Type: Grant
    Filed: March 3, 2008
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies Austria AG
    Inventors: Oliver Blank, Uli Hiller, Maximilian Roesch, Walter Rieger
  • Publication number: 20100117144
    Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
    Type: Application
    Filed: November 10, 2008
    Publication date: May 13, 2010
    Applicant: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlen, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
  • Publication number: 20090218618
    Abstract: A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above the field electrode, the second material being selectively etchable to the first isolating material, a gate dielectric on the sidewall in an upper portion of the trench and a gate electrode in the upper portion of the trench.
    Type: Application
    Filed: March 3, 2008
    Publication date: September 3, 2009
    Applicant: Infineon Technologies Austria AG
    Inventors: Oliver Blank, Uli Hiller, Maximilian Roesch, Walter Rieger
  • Publication number: 20090152624
    Abstract: An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.
    Type: Application
    Filed: January 25, 2008
    Publication date: June 18, 2009
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Uli Hiller, Oliver Blank, Ralf Siemieniec, Maximilian Roesch
  • Publication number: 20070296029
    Abstract: An integrated circuit including a field effect controllable trench transistor having two-control electrodes is disclosed. One embodiment provides a trench having a first control electrode and a second control electrode. A first electrical line is provided in an edge structure for electrically contact-connecting second control electrode.
    Type: Application
    Filed: June 8, 2007
    Publication date: December 27, 2007
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Franz Hirler, Maximilian Roesch, Ralf Siemieniec