Patents by Inventor Mayank Bulsara

Mayank Bulsara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Relaxed InxGa1-xAs layers integrated with Si
    Patent number: 6589335
    Abstract: A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxially growing a relaxed graded layer of InxGa1−xAs at a temperature ranging upwards from about 600° C. with a subsequent process for planarization of the InGaAs alloy.
    Type: Grant
    Filed: February 8, 2001
    Date of Patent: July 8, 2003
    Assignee: AmberWave Systems Corporation
    Inventors: Mayank Bulsara, Eugene A. Fitzgerald
  • Dynamic random access memory trench capacitors
    Publication number: 20030030091
    Abstract: DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
    Type: Application
    Filed: August 13, 2002
    Publication date: February 13, 2003
    Applicant: AmberWave Systems Corporation
    Inventors: Mayank Bulsara, Matthew T. Currie, Anthony J. Lochtefeld
  • Method of forming multiple gate insulators on a strained semiconductor heterostructure
    Publication number: 20030013287
    Abstract: A method is disclosed for forming multiple gate insulators on a strained semiconductor heterostructure as well as the devices and circuits formed therefrom. In an embodiment, the method includes the steps of depositing a first insulators on the strained semiconductor heterostructure, removing at least a portion of the first insulators from the strained semiconductor heterostructure, and depositing a second insulators on the strained semiconductor heterostructure.
    Type: Application
    Filed: June 7, 2002
    Publication date: January 16, 2003
    Inventors: Anthony Lochtefeld, Mayank Bulsara
  • Relaxed InxGa1-xAs layers integrated with Si
    Publication number: 20020129762
    Abstract: A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxially growing a relaxed graded layer of InxGa1−xAs at a temperature ranging upwards from about 600° C. with a subsequent process for planarization of the InGaAs alloy.
    Type: Application
    Filed: February 8, 2001
    Publication date: September 19, 2002
    Inventors: Mayank Bulsara, Eugene A. Fitzgerald