Abstract: A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.

Abstract: The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

Abstract: A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor layer and a second substrate together and separating the nitride semiconductor layer and the first substrate from each other. With this manufacturing method, a nitride semiconductor device can be obtained with high yield.

Abstract: A nitride semiconductor light-emitting device including a first n-type nitride semiconductor layer, a light-emitting layer, a p-type nitride semiconductor layer, and a second n-type nitride semiconductor layer in this order, and further including an electrode formed of a transparent conductive film on the second n-type nitride semiconductor layer is provided. The nitride semiconductor light-emitting device has improved light extraction efficiency. The electrode formed of a transparent conductive film is preferably formed on a part of a surface of the second n-type nitride semiconductor layer.

Abstract: In a nitride semiconductor light emitting element, a light transmitting substrate has an upper surface on which a nitride semiconductor layer including at least a light emitting layer is formed. On the upper surface of the light transmitting substrate, recess regions and rise regions are formed. One of each of the recess regions and each of the rise regions is formed by a polygon having at least one apex having an interior angle of 180° or greater when viewed in a planar view. The other of each of the recess regions and each of the rise regions is formed not to be connected to one another in a straight line when viewed in a planar view. A nitride semiconductor light emitting element having such a configuration has excellent light extraction efficiency and can be manufactured at a moderate cost.

Abstract: A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.

Abstract: A method of producing a nitride-based semiconductor device includes the steps of growing an InxAlyGa1-x-yN (0?x, 0?y, x+y<1) buffer layer (2; 12; 22; 32; 42) on a substrate (1; 11; 21; 31; 41) at a first substrate temperature, and growing a first conductivity type nitride-based semiconductor layer (4; 14; 24; 34; 44) on the buffer layer at a second substrate temperature. The first temperature is higher than the second temperature.

Abstract: A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.

Abstract: A fabricating method of a semiconductor light-emitting device includes the step of forming a wafer including a multi-layered semiconductor film epitaxially grown on a base substrate and containing an active layer, the step of performing pass/fail judgment of the active layer by photo-exciting the active layer in the wafer and by measuring emission intensity from the active layer at least at two temperature points, and the step of forming a light-emitting device structure with the multi-layered semiconductor film containing the active layer judged to be of good quality in the pass/fail judgment.

Abstract: A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.

Abstract: A nitride semiconductor light-emitting device including a first n-type nitride semiconductor layer, a light-emitting layer, a p-type nitride semiconductor layer, and a second n-type nitride semiconductor layer in this order, and further including an electrode formed of a transparent conductive film on the second n-type nitride semiconductor layer is provided. The nitride semiconductor light-emitting device has improved light extraction efficiency. The electrode formed of a transparent conductive film is preferably formed on a part of a surface of the second n-type nitride semiconductor layer.

Abstract: There is provided a light emitting nitride semiconductor device including a substrate, a semiconductor layer of a first conductivity overlying the substrate, a light emitting layer overlying the semiconductor layer of the first conductivity, a semiconductor layer of a second conductivity overlying the light emitting layer, and a second electrode overlying at least the semiconductor layer of the second conductivity, wherein the second electrode has a high reflectance for a main light emission wavelength and the light emitting device allows light to be extracted mainly at a side surface thereof.

Abstract: A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.

Abstract: An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

Abstract: A method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf) is provided. The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition using a nitrogen-containing gas as a carrier gas, such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

Abstract: A method of producing a nitride-based semiconductor device includes the steps of forming a releasing layer on a substrate for facilitating separation of the substrate; and forming at least one nitride-based semiconductor layer on the releasing layer. As the releasing layer, or in place of the releasing layer, at least one conductive film may be formed on the substrate.

Abstract: A fabricating method of a semiconductor light-emitting device includes the step of forming a wafer including a multi-layered semiconductor film epitaxially grown on a base substrate and containing an active layer, the step of performing pass/fail judgment of the active layer by photo-exciting the active layer in the wafer and by measuring emission intensity from the active layer at least at two temperature points, and the step of forming a light-emitting device structure with the multi-layered semiconductor film containing the active layer judged to be of good quality in the pass/fail judgment.

Abstract: A nitride-based semiconductor light-emitting device includes a light-emitting element having an n-GaN substrate and a nitride-based semiconductor multilayer film formed on the n-GaN substrate. The n-GaN substrate of the light-emitting element is fixed to a mount surface. The n-GaN substrate has one surface with the nitride-based semiconductor multilayer film formed thereon and an opposite surface with a metal layer and an ohmic electrode formed thereon. The metal layer contains a first metal and a second metal and the ohmic electrode is formed of the second metal. The adhesion between the ohmic electrode and the n-GaN substrate is thus improved. Accordingly, the semiconductor light-emitting device which is highly reliable with respect to the thermal strain from the mount surface can be provided.

Abstract: The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

Abstract: The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.