Abstract: A method of producing a nitride-based semiconductor device includes the steps of growing an InxAlyGa1-x-yN(0?x, 0?y, x+y<1) buffer layer (2; 12; 22; 32; 42) on a substrate (1; 11; 21; 31; 41) at a first substrate temperature, and growing a first conductivity type nitride-based semiconductor layer (4; 14; 24; 34; 44) on the buffer layer at a second substrate temperature. The first temperature is higher than the second temperature.

Abstract: A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor layer and a second substrate together and separating the nitride semiconductor layer and the first substrate from each other. With this manufacturing method, a nitride semiconductor device can be obtained with high yield.

Abstract: The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.

Abstract: There is provided a light emitting nitride semiconductor device including a substrate, a semiconductor layer of a first conductivity overlying the substrate, a light emitting layer overlying the semiconductor layer of the first conductivity, a semiconductor layer of a second conductivity overlying the light emitting layer, and a second electrode overlying at least the semiconductor layer of the second conductivity, wherein the second electrode has a high reflectance for a main light emission wavelength and the light emitting device allows light to be extracted mainly at a side surface thereof.

Abstract: A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode are formed at the layered body, each having the desired reflectance. The thickness of the translucent substrate and the nitride layered body stacked thereon of the semiconductor light emitting element is 60 ?m to 460 ?m.

Abstract: A nitride-based compound semiconductor light-emitting element of the present invention includes: a P-type electrode; a P-type nitride-based compound semiconductor layer disposed on the P-type electrode; a light-emitting layer disposed on the P-type nitride-based compound semiconductor layer and emitting light; a nitride-based compound semiconductor layer disposed on the light-emitting layer and transmitting light emitted by the light-emitting layer therethrough; a buffer layer disposed on the nitride-based compound semiconductor layer and transmitting the light therethrough, wherein the buffer layer is made of a nitride-based compound semiconductor material and a trench is formed in the buffer layer so as to expose portions of the nitride-based compound semiconductor layer; and an N-type electrode disposed so as to cover the trench and electrically connected to the nitride-based compound semiconductor layer.

Abstract: There is provided a method of forming an ohmic electrode, including the steps of: forming a hafnium layer on a surface of an n type nitride-based compound semiconductor layer to have a thickness of 1 to 15 nm; forming an aluminum layer on the hafnium layer; and annealing the hafnium layer and the aluminum layer to form a layer formed of hafnium and aluminum mixed together.

Abstract: A nitride-based semiconductor light-emitting device includes a light-emitting element having an n-GaN substrate and a nitride-based semiconductor multilayer film formed on the n-GaN substrate. The n-GaN substrate of the light-emitting element is fixed to a mount surface. The n-GaN substrate has one surface with the nitride-based semiconductor multilayer film formed thereon and an opposite surface with a metal layer and an ohmic electrode formed thereon. The metal layer contains a first metal and a second metal and the ohmic electrode is formed of the second metal. The adhesion between the ohmic electrode and the n-GaN substrate is thus improved. Accordingly, the semiconductor light-emitting device which is highly reliable with respect to the thermal strain from the mount surface can be provided.

Abstract: The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.

Abstract: The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.

Abstract: In a nitride type compound semiconductor light emitting element, a phosphor layer is formed in a multilayer constituting the light emitting element. A highly-reflective layer is formed at a side plane of the light emitting element. The nitride type compound semiconductor light emitting element can emit white light or multi-colored light, and is superior in mass production and reliability. The wavelength of the emitted light can be converted into a different wavelength by the light emitting element alone.

Abstract: A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.

Abstract: Disclosed is a light emitting semiconductor device which contains LED chip(s) wherein semiconductor layer(s) comprising P—N junction(s) is or are laminated over substrate(s) and which is equipped with support structure(s) providing electrical continuity to such LED chip(s), such LED chip(s) being covered by resin. Such LED chip(s) is or are secured by way of intervening first resin(s) to mounting surface(s) of the support structure(s) and is or are covered by second resin(s). First resins(s) and second resin(s) are the same resin(s).

Abstract: The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

Abstract: A nitride-based compound semiconductor light-emitting element of the present invention includes: a P-type electrode; a P-type nitride-based compound semiconductor layer disposed on the P-type electrode; a light-emitting layer disposed on the P-type nitride-based compound semiconductor layer and emitting light; a nitride-based compound semiconductor layer disposed on the light-emitting layer and transmitting light emitted by the light-emitting layer therethrough; a buffer layer disposed on the nitride-based compound semiconductor layer and transmitting the light therethrough, wherein the buffer layer is made of a nitride-based compound semiconductor material and a trench is formed in the buffer layer so as to expose portions of the nitride-based compound semiconductor layer; and an N-type electrode disposed so as to cover the trench and electrically connected to the nitride-based compound semiconductor layer.

Abstract: There is provided a method of forming an ohmic electrode, including the steps of: forming a hafnium layer on a surface of an n type nitride-based compound semiconductor layer to have a thickness of 1 to 15 nm; forming an aluminum layer on the hafnium layer; and annealing the hafnium layer and the aluminum layer to form a layer formed of hafnium and aluminum mixed together.

Abstract: A nitride based semiconductor light emitting element includes at least a gallium nitride based compound semiconductor layer of a first conductivity type and a gallium nitride based compound semiconductor layer of a second conductivity type stacked on a substrate. On a main region of the top surface of the semiconductor layer of the second conductivity type, a Pd-containing electrode is formed, and the top surface and side surfaces of the Pd-containing electrode as well as the surface of the semiconductor layer of the second conductivity type in a region of at least a prescribed width from the side surfaces are covered by a conductive shielding film to be shielded from the atmosphere or a mold resin.

Abstract: A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode are formed at the layered body, each having the desired reflectance. The thickness of the translucent substrate and the nitride layered body stacked thereon of the semiconductor light emitting element is 60 &mgr;m to 460 &mgr;m.

Abstract: The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.

Abstract: In a nitride type compound semiconductor light emitting element, a phosphor layer is formed in a multilayer constituting the light emitting element. A highly-reflective layer is formed at a side plane of the light emitting element. The nitride type compound semiconductor light emitting element can emit white light or multi-colored light, and is superior in mass production and reliability. The wavelength of the emitted light can be converted into a different wavelength by the light emitting element alone.