Abstract: It is an object to provide a test method of a process, an electric characteristic, and a mechanical characteristic of a structure body in a micromachine without contact. A structure body including a first conductive layer, a second conductive layer provided in parallel to the first conductive layer, and a sacrifice layer or a space provided between the first conductive layer and the second conductive layer is provided; an antenna connected to the structure body is provided; electric power is supplied to the structure body wirelessly through the antenna; and an electromagnetic wave generated from the antenna is detected as a characteristic of the structure body.

Abstract: It is an object of the present invention to provide a micro-electro-mechanical-device having a microstructure and a semiconductor element over one surface. In particular, it is an object of the present invention to provide a method for simplifying the process of forming the microstructure and the semiconductor element over one surface. A space in which the microstructure is moved, that is, a movable space for the microstructure is formed by processsing an insulating layer which is formed in a process of forming the semiconductor element. The movable space can be formed by forming the insulating layer having a plurality of openings and making the openings face each other to be overlapped each other.

Abstract: A compact sensor with which particles floating in the air can be easily detected. A sensor having a microstructure which detects a detection object by contact is used. A microstructure has an opening to be a detection hole corresponding to the size of a detection object, and a pair of electrodes having a bridge structure are provided thereabove or thereunder so as to partially contact with each other.

Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.

Abstract: A method for manufacturing a semiconductor device is provided, which includes the step of forming a microstructure comprising a layer containing silicon over a first substrate, the step of forming an interlayer insulating layer over the microstructure, the step of forming a connection conductive layer over the interlayer insulating layer, and the step of separating the microstructure from the first substrate.

Abstract: A micro structure and an electric circuit included in a micro electro mechanical device are manufactured over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes layers formed of the same insulating film as the gate insulating layer and the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.

Abstract: A step of forming a through hole in a semiconductor substrate, or a step of polishing the semiconductor substrate from its back surface requires a very long time and causes decrease of productivity. In addition, when semiconductor substrates are stacked, a semiconductor integrated circuit which is formed of the stack is thick and has poor mechanical flexibility. A release layer is formed over each of a plurality of substrates, layers each having a semiconductor element and an opening for forming a through wiring are formed over each of the release layers. Then, layers each having the semiconductor element are peeled off from the substrates, and then overlapped and stacked, a conductive layer is formed in the opening, and the through wiring is formed; thus, a semiconductor integrated circuit is formed.

Abstract: Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other.

Abstract: A micro structure and an electric circuit included in a micro electro mechanical device are manufactured over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes layers formed of the same insulating film as the gate insulating layer and the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.

Abstract: The ink composition for a writing instrument has an aqueous component containing water, a thixotropic agent, a polyhydric alcohol and a pigment, dispersed in an oil component having dyes and non-dye components, wherein the IOB value for all of the dyes in the oil component is no greater than 0.9.

Abstract: Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other.

Abstract: A step of forming a through hole in a semiconductor substrate, or a step of polishing the semiconductor substrate from its back surface requires a very long time and causes decrease of productivity. In addition, when semiconductor substrates are stacked, a semiconductor integrated circuit which is formed of the stack is thick and has poor mechanical flexibility. A release layer is formed over each of a plurality of substrates, layers each having a semiconductor element and an opening for forming a through wiring are formed over each of the release layers. Then, layers each having the semiconductor element are peeled off from the substrates, and then overlapped and stacked, a conductive layer is formed in the opening, and the through wiring is formed; thus, a semiconductor integrated circuit is formed.

Abstract: It is an object of the present invention to provide a micro-electro-mechanical-device having a microstructure and a semiconductor element over one surface. In particular, it is an object of the present invention to provide a method for simplifying the process of forming the microstructure and the semiconductor element over one surface. A space in which the microstructure is moved, that is, a movable space for the microstructure is formed by procecssing an insulating layer which is formed in a process of forming the semiconductor element. The movable space can be formed by forming the insulating layer having a plurality of openings and making the openings face each other to be overlapped each other.

Abstract: A step of forming a through hole in a semiconductor substrate, or a step of polishing the semiconductor substrate from its back surface requires a very long time and causes decrease of productivity. In addition, when semiconductor substrates are stacked, a semiconductor integrated circuit which is formed of the stack is thick and has poor mechanical flexibility. A release layer is formed over each of a plurality of substrates, layers each having a semiconductor element and an opening for forming a through wiring are formed over each of the release layers. Then, layers each having the semiconductor element are peeled off from the substrates, and then overlapped and stacked, a conductive layer is formed in the opening, and the through wiring is formed; thus, a semiconductor integrated circuit is formed.

Abstract: A micromachine is generally formed using a semiconductor substrate such as a silicon wafer. One of the objects of the present invention is to realize further reduction in cost by integrating a minute structure and a semiconductor element controlling the minute structure over one insulating surface in one step. A minute structure has a structure in which a first layer formed into a frame-shape are provided over an insulating surface, a space is formed inside the frame, and a second layer is formed to cross over the first layer. Such a minute structure and a thin film transistor can be integrated over one insulating surface in one step.

Abstract: It is an object of the present invention to manufacture a micromachine having a plurality of structural bodies with different functions and to shorten the time required for sacrifice layer etching in a process of manufacturing the micromachine. Another object of the present invention is to prevent a structural layer from being attached to a substrate after the sacrifice layer etching. In other words, an object of the present invention is to provide an inexpensive and high-value-added micromachine by improving throughput and yield. The sacrifice layer etching is conducted in multiple steps. In the multiple steps of the sacrifice layer etching, a part of the sacrifice layer that does not overlap with the structural layer is removed by the earlier sacrifice layer etching and a part of the sacrifice layer that is under the structural layer is removed by the later sacrifice layer etching.

Abstract: A micromachine includes a microstructure and a semiconductor element formed over one insulating substrate. The micromachine includes including a movable layer containing polycrystalline silicon and a space below or above the layer. Such polycrystalline silicon is formed on an insulating surface, so that it is used as a microstructure and used for forming a semiconductor element. Accordingly, a semiconductor device may include a microstructure and a semiconductor provided over one insulating substrate.

Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.

Abstract: It is an object of the present invention to provide a micro-electro-mechanical-device having a microstructure and a semiconductor element over one surface. In particular, it is an object of the present invention to provide a method for simplifying the process of forming the microstructure and the semiconductor element over one surface. A space in which the microstructure is moved, that is, a movable space for the microstructure is formed by processing an insulating layer which is formed in a process of forming the semiconductor element. The movable space can be formed by forming the insulating layer having a plurality of openings and making the openings face each other to be overlapped each other.

Abstract: A micromachine is generally formed using a semiconductor substrate such as a silicon wafer. One of the objects of the present invention is to realize further reduction in cost by integrating a minute structure and a semiconductor element controlling the minute structure over one insulating surface in one step. A minute structure has a structure in which a first layer formed into a frame-shape are provided over an insulating surface, a space is formed inside the frame, and a second layer is formed to cross over the first layer. Such a minute structure and a thin film transistor can be integrated over one insulating surface in one step.