Patents by Inventor Meguru Kashida

Meguru Kashida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5118573
    Abstract: An improvement is obtained in the stability and recording density of a magneto-optical recording medium having a laminar structure on a transparent substrate plate successively consisting of a first dielectric layer, a magnetic recording layer, a second dielectric layer and a metallic light-reflecting layer by forming the dielectric layer with a unique and specific dielectric material which is an amorphous composite material comprising boron and hydrogen in a specified weight proportion formed by the method of plasma CVD or sputtering. The dielectric material can be a ternary composite of boron, hydrogen and nitrogen or quaternary composite of boron, hydrogen, nitrogen and silicon or carbon.
    Type: Grant
    Filed: October 25, 1990
    Date of Patent: June 2, 1992
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yoshio Tawara, Katsushi Tokunaga, Tadao Nomura, Yoshiaki Shimizu, Yoshihiro Kubota, Meguru Kashida
  • Patent number: 5098515
    Abstract: The inventive method provides a membrane for X-ray lithography compositely composed of silicon carbide and silicon nitride having high performance in respect of stability against high energy beam irradiation and transparency to visible light. The method comprises depositing a composite film of a specified SiC:Si.sub.3 N.sub.4 molar proportion by sputtering on a silicon wafer as the substrate under such conditions that the thus deposited film is under a compressively stressed state, annealing the substrate bearing the composite film deposited thereon at a specified temperature so as to bring the composite film under a tensile internal stress and then removing the substrate by etching leaving a frame portion.
    Type: Grant
    Filed: December 14, 1990
    Date of Patent: March 24, 1992
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Meguru Kashida, Yoshihiro Kubota, Yoshihiko Nagata
  • Patent number: 5089085
    Abstract: The inventive method provides a silicon carbide membrane for X-ray lithography having high performance in respect of stability against high energy beam irradiation. The method comprises depositing a silicon carbide film by sputtering on a silicon wafer as the substrate under such conditions that the thus deposited film is under a tensile stress in a specified range by keeping the substrate at a temperature higher than 500.degree. C. The thus deposited silicon carbide film is at least partly crystalline and the crystallinity thereof can be defined by the sharpness of a peak in the X-ray diffraction diagram of the membrane which can be assigned to the (1 1 1) plane of the crystalline silicon carbide.
    Type: Grant
    Filed: December 21, 1990
    Date of Patent: February 18, 1992
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Meguru Kashida, Yoshihiro Kubota, Yoshihiko Nagata
  • Patent number: 4983701
    Abstract: A releasing agent silicone composition which gives an improved cured film for rendering surfaces non-adherent having lasting releaseability, good slip factor, and stable peeling strength and rate of residual adhesive strength, even when the adhesive material is acrylic, employs a first organopolysiloxane having at least two silicon-bonded unsaturated groups, a second organopolysiloxane having at least two silicon-bonded hydrogen atoms, and a third organopolysiloxane having one end terminated by a Si--H bond.
    Type: Grant
    Filed: January 30, 1989
    Date of Patent: January 8, 1991
    Assignee: Shin-Etsu Chemical Co., Ltd
    Inventors: Yasuaki Hara, Masahiko Ogawa, Meguru Kashida
  • Patent number: 4895761
    Abstract: The invention provides a method for improving the stability of the surface-releasing performance of a silicone-coated release paper so as to minimize the changes in the peeling resistance between the release paper and an adhesive surface bonded thereto even after lapse of time from preparation of the release paper to bonding of the adhesive surface or from bonding of the adhesive surface to peeling thereof. The method comprises providing an overcoating layer of an organotin compound such as dibutyl tin diacetate on the surface of a cured coating layer of an organopolysiloxane composition comprising a vinyl-containing organopolysiloxane, an organohydrogenpolysiloxane and a platinum catalyst to promote the addition reaction between the silicon-bonded vinyl groups and the silicon-bonded hydrogen atoms.
    Type: Grant
    Filed: September 1, 1988
    Date of Patent: January 23, 1990
    Assignee: Shin Etsu Chemical Co., Ltd.
    Inventors: Meguru Kashida, Yasuaki Hara
  • Patent number: 4849491
    Abstract: A curable organopolysiloxane composition comprising:(A) an organopolysiloxane having at least two aliphatic unsaturated hydrocarbon groups,(B) a particular organohydrogenpolysiloxane having a group represented by the formula: ##STR1## wherein R.sup.3 is a substituted or unsubstituted monovalent hydrocarbon group and a is an integer of 2 or 3, and(C) a platinum catalyst.This composition has good curing properties, and the silicone film obtained by curing has good release properties which is stable for a long period of time.
    Type: Grant
    Filed: March 7, 1988
    Date of Patent: July 18, 1989
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masahiko Ogawa, Meguru Kashida, Kenichi Isobe
  • Patent number: 4726964
    Abstract: The invention provides a method for imparting releasability to the surface of a plastic film or paper by coating the surface with an organopolysiloxane composition followed by curing, in which the curing is complete by heating at a relatively low temperature and the cured surface film of the composition is very stable and free from the problem of transfer to another body in contact therewith. The composition comprises a vinyl-containing organopolysiloxane, an organohydrogenpolysiloxane and a platinum compound to catalyze the addition reaction between the silicon-bonded vinyl groups and silicon-bonded hydrogen atoms. Different from conventional organohydrogenpolysiloxane having a linear molecular structure, the organohydrogenpolysiloxane used in the invention is represented by the general unit formula (RSiO.sub.1.5).sub.m (RHSiO.sub.0.5).sub.n, in which R is a monovalent hydrocarbon group free form unsaturation and m and n are each a positive integer with the proviso that the ratio of n/m is from 0.1 to 3.
    Type: Grant
    Filed: April 4, 1986
    Date of Patent: February 23, 1988
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Kenichi Isobe, Hisashi Aoki, Yasuaki Hara, Meguru Kashida, Kiyohiro Kondow