Abstract: Methods and systems for creating a recipe for a defect review process are provided. One method includes determining an identity of a specimen on which the defect review process will be performed. The method also includes identifying inspection results for the specimen based on the identity. In addition, the method includes creating the recipe for the defect review process based on the inspection results. One system includes a sensor configured to generate output responsive to an identity of a specimen on which the defect review process will be performed. The system also includes a processor configured to determine the identity of the specimen using the output, to identify inspection results for the specimen based on the identity, and to create the recipe for the defect review process based on the inspection results.

Abstract: Methods and systems for preparing a substrate for analysis are provided. One method includes removing a portion of a copper structure on the substrate using an etch chemistry in combination with an electron beam. The etch chemistry is substantially inert with respect to the copper structure except in the presence of the electron beam. Other methods involve forming masking layers on a substrate that will protect the substrate during etching. For example, one method includes exposing a first portion of the substrate to an electron beam. A second portion of the substrate not exposed to the electron beam includes a copper structure. The method also includes exposing the substrate to a fluorine containing chemical. The fluorine containing chemical bonds to the first portion but not the second portion to form a fluorine containing layer on the first portion.

Abstract: One embodiment disclosed relates to an integrated electron beam inspection and contaminant removal tool. An electron beam column is configured to image an area on a substrate being inspected. A contaminant removal subsystem is integrated with the electron beam column and configured to remove contamination from a surface of the substrate. Means is advantageously included by which the substrate is kept from being exposed to air between the contaminant removal subsystem and the electron beam column.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: Methods and apparatus are providing for inspecting a test sample. An electron beam is tuned to cause secondary electron emissions upon scanning a target area. Reactive substances are introduced to etch and remove materials and impurities from the scan target. Residual components are evacuated. In one example, a laser is used to irradiate and area to assist in the removal of residual components with poor vapor pressure.

Abstract: The present invention includes a system for efficient and effective detection and characterization of dishing and/or erosion. An x-ray emission inducer is used to scan a target on a sample. The target can be scanned at an acute incident angle to allow characterization of the dishing and/or erosion and analysis of the metallization or thin film layer topology.

Abstract: The present invention provides a system for characterizing voids in test samples. An x-ray emission inducer scans a target such as a via on a test sample. A metallization or thin film layer emits x-rays as a result of the scan. The x-ray emission intensity can be measured and compared against a control measurement. The information obtained can be used to characterize a void in the scan target.

Abstract: Methods and apparatus are providing for inspecting a test sample. An electron beam is tuned to cause secondary electron emissions upon scanning a target area. Reactive substances are introduced to etch and remove materials and impurities from the scan target. Residual components are evacuated. In one example, a laser is used to irradiate and area to assist in the removal of residual components with poor vapor pressure.

Abstract: Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection techniques involve monitoring the emission levels of secondary electrons and backscatter electrons together with the current within the sample. Depending upon the weight given to each of these parameters, an endpoint is identified when the values of these parameters change more than a certain percentage, relative to an initial value for these values.

Abstract: Methods and apparatus are providing for inspecting a test sample. An electron beam is tuned to cause secondary electron emissions upon scanning a target area. Reactive substances are introduced to etch and remove materials and impurities from the scan target. Residual components are evacuated. In one example, a laser is used to irradiate and area to assist in the removal of residual components with poor vapor pressure.

Abstract: The present invention includes a system for localization of defects in test samples. A sample is scanned using a particle beam. Some particles interact with conductive elements and may cause the emission of x-rays. Other particles can pass through the sample entirely and generate a current that can be measured. A higher current generated indicates less conductive material at the scan target that may mean a void, dishing, or erosion is present. Localization of a defect can be confirmed using an x-ray emission detector.

Abstract: The present invention includes a system for efficient and effective detection and characterization of dishing and/or erosion. An x-ray emission inducer is used to scan a target on a sample. The target can be scanned at an acute incident angle to allow characterization of the dishing and/or erosion and analysis of the metallization or thin film layer topology.

Abstract: The present invention provides a system for characterizing voids in test samples. An x-ray emission inducer scans a target such as a via on a test sample. A metallization or thin film layer emits x-rays as a result of the scan. The x-ray emission intensity can be measured and compared against a control measurement. The information obtained can be used to characterize a void in the scan target.

Abstract: The present invention includes a system for localization of defects in test samples. A sample is scanned using a particle beam. Some particles interact with conductive elements and may cause the emission of x-rays. Other particles can pass through the sample entirely and generate a current that can be measured. A higher current generated indicates less conductive material at the scan target that may mean a void, dishing, or erosion is present. Localization of a defect can be confirmed using an x-ray emission detector.

Abstract: A workpiece is treated with particles where an apparatus, including a particle source, produces a particle beam and directs the particle beam toward a surface of a work piece. A Faraday cup assembly is positioned to intercept the particle beam for measuring a characteristic of the particle beam. The Faraday cup assembly includes a Faraday cup for gathering a charge and an aperture assembly having an aperture through which charged particles travel to the Faraday cup. The Faraday cup is located relative to the aperture assembly to intercept the charged particles. The aperture assembly is constructed to vary the size of the aperture.

Abstract: An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes an apparatus for generating an ion beam and directing it toward a surface of a work piece and a plasma generator for generating plasma to neutralize the ion beam and the work piece surface. The plasma generator has a plasma generator chamber defined by walls, a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface, cathodes, and anodes spaced from the cathodes and from the walls of the chamber. The plasma generator also has magnets arranged within the plasma generator chamber, adjacent the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode.

Abstract: An ion source is provided that is constructed for use with a magnet that produces magnetic flux lines extending in a predetermined direction and a source of ionizable material for creating ion. The ion source includes a chamber, defined by walls, and a relatively narrow outlet aperture for ions produced in the chamber to leave the chamber. The chamber encloses a cathode and an anode spaced from the cathode and from the walls of the chamber. The anode is positioned with respect to the aperture, the cathode and the predetermined direction of the magnetic flux to cause ions produced in the chamber to drift in crossed magnetic and electric fields so as to concentrate near the aperture.

Abstract: Ion implanter having at least two independent ion generating systems coupled to a single scanning end station. In a preferred embodiment one of the ion generating systems generates ions approximately in the 3-80 keV range and the other system generates ions approximately in the 80-3,000 keV range. The scanning end station may be employ magnetic, electrostatic, or mechanical scanning. This invention has particular relevance for the controlled doping of semiconducting materials and flat panel displays units in which doping may be needed for the production of micro-electronic devices, the sub-circuit crystal damage that is useful for gettering unwanted impurity atoms and for the development of etch pits in flat panel displays. The disclosed apparatus makes possible a variety of chained implants at different energies using the same mask.