Abstract: A multi-column scanning electron microscopy (SEM) system includes a column assembly, where the column assembly includes a first substrate array assembly and at least a second substrate array assembly. The system also includes a source assembly, the source assembly including two or more illumination sources configured to generate two or more electron beams and two or more sets of a plurality of positioners configured to adjust a position of a particular illumination source of the two or more illumination sources in a plurality of directions. The system also includes a stage configured to secure a sample, where the column assembly directs at least a portion of the two or more electron beams onto a portion of the sample.

Abstract: A multi-column scanning electron microscopy (SEM) system includes a column assembly, where the column assembly includes a first substrate array assembly and at least a second substrate array assembly. The system also includes a source assembly, the source assembly including two or more illumination sources configured to generate two or more electron beams and two or more sets of a plurality of positioners configured to adjust a position of a particular illumination source of the two or more illumination sources in a plurality of directions. The system also includes a stage configured to secure a sample, where the column assembly directs at least a portion of the two or more electron beams onto a portion of the sample.

Abstract: A multi-column scanning electron microscopy (SEM) system is disclosed. The SEM system includes a source assembly. The source assembly includes two or more electron beam sources configured to generate a plurality of electron beams. The source assembly also includes two or more sets of positioners configured to actuate the two or more electron beam sources. The SEM system also includes a column assembly. The column assembly includes a plurality of substrate arrays. The column assembly also includes two or more electron-optical columns formed by a set of column electron-optical elements bonded to the plurality of substrate arrays. The SEM system also includes a stage configured to secure a sample that at least one of emits or scatters electrons in response to the plurality of electron beams directed by the two or more electron-optical columns to the sample.

Abstract: A multi-column scanning electron microscopy (SEM) system is disclosed. The SEM system includes a source assembly. The source assembly includes two or more electron beam sources configured to generate a plurality of electron beams. The source assembly also includes two or more sets of positioners configured to actuate the two or more electron beam sources. The SEM system also includes a column assembly. The column assembly includes a plurality of substrate arrays. The column assembly also includes two or more electron-optical columns formed by a set of column electron-optical elements bonded to the plurality of substrate arrays. The SEM system also includes a stage configured to secure a sample that at least one of emits or scatters electrons in response to the plurality of electron beams directed by the two or more electron-optical columns to the sample.

Abstract: A multi-column scanning electron microscopy (SEM) system includes a column assembly, where the column assembly includes a first substrate array assembly and at least a second substrate array assembly. The system also includes a source assembly, the source assembly including two or more illumination sources configured to generate two or more electron beams and two or more sets of a plurality of positioners configured to adjust a position of a particular illumination source of the two or more illumination sources in a plurality of directions. The system also includes a stage configured to secure a sample, where the column assembly directs at least a portion of the two or more electron beams onto a portion of the sample.

Abstract: A field emission device comprises one or more emitter elements, each having a high aspect ratio structure with a nanometer scaled cross section; and one or more segmented electrodes, each surrounding one of the one or more emitters. Each of the one or more segmented electrodes has multiple electrode plates. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An inspection tool for detecting electromagnetic waveforms is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

Abstract: Embodiments of this invention use multi-layer ceramic substrate with one or more hermetically sealed and filled metal vias with smaller pitch and size in combination with flexible printed circuit cables and interposers to provide a custom electric feed through for vacuum to atmosphere chambers. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A metrology system is configured to provide visual inspection of a workpiece, three-dimensional magnetic field map, and height measurement. A stage is configured to bring points of interest at the workpiece under the desired tool for measurement. The optical field, magnetic field, and height information can be used independently or together in order to correlate defects in the manufacturing process of the workpiece. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A charged particle detection device has an active portion for configured to produce a signal in response secondary charged particles emitted from a sample landing on the active portion. The active portion is shaped to accommodate an expected asymmetric pattern of the secondary charged particles at a detector. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An inspection tool for detecting electromagnetic waveforms is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

Abstract: A semiconductor device comprises a plurality of device features formed on a substrate and a plurality of dummy features formed on the substrate and across an open region between the device features. Adjacent device features are spaced apart by a distance of 100 microns or more. Each device feature includes a barrier island and a metal layer on top of the barrier island. Each dummy feature has a structure that corresponds to the structure of the barrier island. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A field emission device comprises one or more emitter elements, each having a high aspect ratio structure with a nanometer scaled cross section; and one or more segmented electrodes, each surrounding one of the one or more emitters. Each of the one or more segmented electrodes has multiple electrode plates. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A charged particle detection device has an active portion for configured to produce a signal in response secondary charged particles emitted from a sample landing on the active portion. The active portion is shaped to accommodate an expected asymmetric pattern of the secondary charged particles at a detector. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An optical inspection tool is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

Abstract: One embodiment relates to an electron beam apparatus. The apparatus includes a source for generating an incident electron beam, an electron lens for focusing the incident electron beam so that the beam impinges upon a substrate surface and interacts with surface material so as to cause secondary emission of scattered electrons, and a detector configured to detect the scattered electrons. The apparatus further includes an advantageous device configured to trap the scattered electrons which are emitted at sharp angles relative to the sample surface plane of the substrate surface. Other embodiments are also disclosed.

Abstract: Embodiments of this invention use multi-layer ceramic substrate with one or more hermetically sealed and filled metal vias with smaller pitch and size in combination with flexible printed circuit cables and interposers to provide a custom electric feed through for vacuum to atmosphere chambers. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: A metrology system is configured to provide visual inspection of a workpiece, three-dimensional magnetic field map, and height measurement. A stage is configured to bring points of interest at the workpiece under the desired tool for measurement. The optical field, magnetic field, and height information can be used independently or together in order to correlate defects in the manufacturing process of the workpiece. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.