Patents by Inventor Mei-Hui Fu

Mei-Hui Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Interconnect Structure and Method of Forming the Same
    Publication number: 20160268192
    Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.
    Type: Application
    Filed: May 20, 2016
    Publication date: September 15, 2016
    Inventors: Yu-Hung Lin, Mei-Hui Fu, Wei-Jung Lin, You-Hua Chou, Chia-Lin Hsu, Hon-Lin Huang, Shih-Chi Lin
  • Interconnect structure and method of forming the same
    Patent number: 9385080
    Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate; a dielectric layer over the contact layer, wherein the dielectric layer has an opening, the opening exposing a portion of the contact layer; a silicide layer over the exposed portion of the contact layer; a barrier layer along sidewalls of the opening; an alloy layer over the barrier layer; a glue layer over the alloy layer; and a conductive plug over the glue layer.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: July 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Lin, Mei-Hui Fu, Wei-Jung Lin, You-Hua Chou, Chia-Lin Hsu, Hon-Lin Huang, Shih-Chi Lin
  • Interconnect Structure and Method of Forming the Same
    Publication number: 20160049362
    Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate; a dielectric layer over the contact layer, wherein the dielectric layer has an opening, the opening exposing a portion of the contact layer; a silicide layer over the exposed portion of the contact layer; a barrier layer along sidewalls of the opening; an alloy layer over the barrier layer; a glue layer over the alloy layer; and a conductive plug over the glue layer.
    Type: Application
    Filed: August 15, 2014
    Publication date: February 18, 2016
    Inventors: Yu-Hung Lin, Mei-Hui Fu, Wei-Jung Lin, You-Hua Chou, Chia-Lin Hsu, Hon-Lin Huang, Shih-Chi Lin
  • Contact Structure and Method of Forming
    Publication number: 20160043035
    Abstract: Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.
    Type: Application
    Filed: November 4, 2014
    Publication date: February 11, 2016
    Inventors: Yu-Hung Lin, Mei-Hui Fu, Sheng-Hsuan Lin