Abstract: A UE includes reception circuitry configured to receive PRACH configuration information comprising a first RSRP threshold and a first list of preamble index ranges, and control circuitry configured to, if one of one or more SSBs with SS-RSRP above the first RSRP threshold is available, select an SSB with SS-RSRP above the first RSRP threshold; else select any SSB, wherein in a first case that the PRACH configuration information further provides a second list of preamble index ranges, the control circuitry is further configured to select a preamble from the preamble index range associated with the selected SSB among the preamble index ranges in second list, in a second case that the PRACH configuration information does not provide the second list, the control circuitry is further configured to select a preamble from the preamble index range associated with the selected SSB among the preamble index ranges in the first list.

Abstract: In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.

Abstract: A display substrate and a display device are provided. The display substrate includes a base substrate and a plurality of reset signal lines. The base substrate includes a display region which includes sub-pixels arranged in array, each sub-pixels includes a pixel driving circuit and a light-emitting element. The plurality of reset signal lines extends in a first direction and include a plurality of first reset signal lines for providing a first reset signal and a plurality of second reset signal lines for providing a second reset signal, and one of the plurality of first reset signal lines and one of the plurality of second reset signal lines are respectively connected to pixel driving circuits of a plurality of sub-pixels located in a same row. A layer where the plurality of first reset signal lines are located is different from layers where the plurality of second reset signal lines are located.

Abstract: A Fan-Out package having a main die and a dummy die side-by-side is provided. A molding material is formed along sidewalls of the main die and the dummy die, and a redistribution layer having a plurality of vias and conductive lines is positioned over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: The present invention discloses a display including a display panel and a light redirecting film disposed on the viewing side of the display panel. The light redirecting film comprises a light redistribution layer, and a light guide layer disposed on the light redistribution layer. The light redistribution layer includes a plurality of strip-shaped micro prisms extending along a first direction and arranged at intervals and a plurality of diffraction gratings arranged at the bottom of the intervals between the adjacent strip-shaped micro prisms, wherein each of the strip-shaped micro prisms has at least one inclined light-guide surface, and the bottom of each interval has at least one set of diffraction gratings, and the light guide layer is in contact with the strip-shaped micro prisms and the diffraction gratings.

Abstract: A method for preparing a semiconductor device includes: providing a semiconductor substrate, in which a trench is formed on the semiconductor substrate, a filling layer is formed in the trench, and a void is formed in the filling layer; removing a portion of the filling layer to expose the void; forming a plug, in which the plug is configured to plug the void and extends into the void by at least a preset distance; and removing a portion of the filling layer and remaining the plug with at least a preset height until the filling layer reaches a preset thickness to form a contact hole.

Abstract: A method by a user equipment (UE) is described. The method includes receiving, from a base station, a first radio resource control (RRC) parameter including one or more entries, wherein each entry at least provides a value for ‘number of DMRS CDM groups without data’ and one value for one DMRS port index among one or more DMRS port indexes; and determining a bitwidth of an antenna port field in a DCI format at least based on a total count of the one or more entries included in the first RRC parameter; and receiving the DCI format with the antenna port field, wherein a value of the antenna port field indicates one of the one or more entries; and receiving a PDSCH scheduled by the DCI format based on the value of the ‘number of DMRS CDM groups without data’ and the DMRS port index associated to an entry corresponding to a value indicated in the antenna port field.

Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. In the display substrate, each signal line includes a first conductive portion; for at least one signal line, the display substrate includes a multi-layer insulating pattern on a side of the first conductive portion of each signal line away from the base substrate, and at least one insulating pattern covers a surface of a side of the first conductive portion away from the base substrate; a first insulating pattern in the multi-layer insulating pattern includes a hollow, and an orthographic projection of the hollow on the base substrate is at least partially in a region surrounded by an orthographic projection of the first conductive portion on the base substrate; and a material of the first insulating pattern includes an organic insulating material.

Abstract: An electronic device includes a display unit, a voltage generation unit, a grayscale adjustment unit, and an overdriving unit. The display unit has a relationship curve between the transmittance and the driving voltage. The relationship curve has a predetermined voltage value corresponding to the maximum transmittance. The voltage generation unit generates a first voltage according to a first grayscale, and generates a second voltage according to a second grayscale. The grayscale adjustment unit receives a first display grayscale value, and outputs the second grayscale value when the first display grayscale value is equal to the first grayscale. The overdriving unit overdrives the second voltage corresponding to the second grayscale to obtain a first target driving voltage, and it provides the first target driving voltage to the display unit.

Abstract: Various embodiments of the present application are directed to an IC, and associated forming methods. In some embodiments, the IC comprises a memory region and a logic region integrated in a substrate. A plurality of memory cell structures is disposed on the memory region. Each memory cell structure of the plurality of memory cell structures comprises a control gate electrode disposed over the substrate, a select gate electrode disposed on one side of the control gate electrode, and a spacer between the control gate electrode and the select gate electrode. A contact etch stop layer (CESL) is disposed along an upper surface of the substrate, extending upwardly along and in direct contact with a sidewall surface of the select gate electrode within the memory region. A lower inter-layer dielectric layer is disposed on the CESL between the plurality of memory cell structures within the memory region.

Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.

Abstract: Some embodiments of the present disclosure relate to an integrated chip including an extended via that spans a combined height of a wire and a via and that has a smaller footprint than the wire. The extended via may replace a wire and an adjoining via at locations where the sizing and the spacing of the wire are reaching lower limits. Because the extended via has a smaller footprint than the wire, replacing the wire and the adjoining via with the extended via relaxes spacing and allows the size of the pixel to be further reduced. The extended via finds application for capacitor arrays used for pixel circuits.

Abstract: A method for treating wastewater containing ertriazole compounds is provided. Hypochlorous acid (HOCl) having a neutral to slightly acidic pH value is added to the wastewater containing triazole compounds for reaction, thereby effectively reacting more than 90% of triazole compounds.

Abstract: A method includes planarizing a protective layer over gate materials overlying a recessed region in a substrate. The planarizing includes forming a first planarized surface by planarizing a sacrificial layer over the protective layer, and forming a second planarized surface of the protective layer by etching the first planarized surface of the sacrificial layer at an even rate across the recessed region. An etch mask layer is formed over the second planarized surface, and control gate stacks are formed in the recessed region by etching the gate materials.

Abstract: A display substrate and a display apparatus are disclosed. The display substrate includes a base substrate including a display region and a peripheral region located on at least one side of the display region, and a first gate drive circuit, the first gate drive circuit includes a first clock signal line, a second clock signal line and N shift register units that are cascaded; each shift register unit of the N shift register units includes a first output circuit; the first output circuit includes the first output transistor, the orthographic projection of the second clock signal line on the base substrate is located between an orthographic projection of the first output transistor on the base substrate and the orthographic projection of the first clock signal line on the base substrate. The display substrate can reduce load of the first clock signal line and the second clock signal line.

Abstract: A semiconductor device includes a semiconductor substrate, a control gate, a select gate, a charge trapping structure, and a dielectric structure. The semiconductor substrate has a drain region, a source region, and a channel region between the drain region and the source region. The control gate is over the channel region of the semiconductor substrate. The select gate is over the channel region of the semiconductor substrate and separated from the control gate. The charge trapping structure is between the control gate and the semiconductor substrate. The dielectric structure is between the select gate and the semiconductor substrate. The dielectric structure has a first part and a second part, the first part is between the charge trapping structure and the second part, and the second part is thicker than the first part.

Abstract: A method by a user equipment (UE) is described. The method includes receiving, from abase station, system information including a first RRC parameter, wherein the first RRC parameter provides a first physical uplink control channel (PUCCH) resource set; and determining a second PUCCH resource set for transmission of HARQ-ACK information on a PUCCH in a first case that the system information provides a second RRC parameter providing the second PUCCH resource set; and determining the first PUCCH resource set for transmission of HARQ-ACK information on the PUCCH in a second case that the system information does not provide the second RRC parameter, wherein each PUCCH resource set includes one or more PUCCH resources.

Abstract: An electronic device includes a back board, a circuit board, a first attaching member and a second attaching member. The circuit board is arranged on the back board. The first attaching member is arranged between the back board and the circuit board. The second attaching member is arranged between the back board and the circuit board. The circuit board is fixed on the back board through the first attaching member and the second attaching member, and a material of the first attaching member is different from that of the second attaching member.

Abstract: Provided is a method of training an image recognition model, the model is configured to detect a defect region in an image of a display substrate, the display substrate includes a display area and a connection area, and the method includes: acquiring a first training sample including images of n display substrates; dividing each of the images of n display substrates into a first sub image and a second sub image, the first sub image is an image of a display area, and the second sub image is an image of a connection area; inputting the first training sample into the image recognition model, the first training sample includes the first sub image and the second sub image; and adjusting at least one feature parameter of the image recognition model to reduce a difference between an output value of the model and a training value of the first training sample.