Patents by Inventor Meng-Chun Chang

Meng-Chun Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220373594
    Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.
    Type: Application
    Filed: August 8, 2022
    Publication date: November 24, 2022
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang
  • Patent number: 11506706
    Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: November 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Harry-Hak-Lay Chuang, Chih-Yang Chang, Ching-Huang Wang, Tien-Wei Chiang, Meng-Chun Shih, Chia Yu Wang
  • Publication number: 20220302300
    Abstract: A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.
    Type: Application
    Filed: June 6, 2022
    Publication date: September 22, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Lien HUANG, Meng-Chun CHANG
  • Publication number: 20220291963
    Abstract: An input-shaping method for a group-modulated input scheme in a plurality of computing-in-memory applications is configured to shape a plurality of multi-bit input signals. The input-shaping method for the group-modulated input scheme in the plurality of computing-in-memory applications includes performing an input splitting step, a threshold setting step and an input shaping step. The input splitting step includes splitting the multi-bit input signals into a plurality of input sub-groups via an input-shaping unit. The threshold setting step includes setting at least one shaping threshold via the input-shaping unit. The input shaping step includes shaping at least one of the input sub-groups according to the at least one shaping threshold via the input-shaping unit to form a plurality of shaped multi-bit input signals so as to increase a probability of a bit equal to 0 occurring in the at least one of the input sub-groups.
    Type: Application
    Filed: March 15, 2021
    Publication date: September 15, 2022
    Inventors: Fu-Chun CHANG, Ta-Wei LIU, Cheng-Xin XUE, Sheng-Po HUANG, Yen-Hsiang HUANG, Meng-Fan CHANG
  • Publication number: 20220293471
    Abstract: A method of forming a semiconductor device includes: forming a metal gate structure over a fin that protrudes above a substrate, the metal gate structure being surrounded by an interlayer dielectric (ILD) layer; recessing the metal gate structure below an upper surface of the ILD layer distal from the substrate; after the recessing, forming a first dielectric layer over the recessed metal gate structure; forming an etch stop layer (ESL) over the first dielectric layer and the ILD layer; forming a second dielectric layer over the ESL; performing a first dry etch process to form an opening that extends through the second dielectric layer, through the ESL, and into the first dielectric layer; after the first dry etch process, performing a wet etch process to clean the opening; and after the wet etch process, performing a second dry etch process to extend the opening through the first dielectric layer.
    Type: Application
    Filed: May 25, 2021
    Publication date: September 15, 2022
    Inventors: Meng Jhe Tsai, Hong-Jie Yang, Meng-Chun Chang, Hao Chiang, Chia-Ying Lee, Huan-Just Lin, Chuan Chang
  • Patent number: 11416146
    Abstract: A memory structure with input-aware maximum multiply-and-accumulate value zone prediction for computing-in-memory applications includes a memory array, an input-aware zone prediction circuit and an analog-to-digital converter. An input-aware maximum partial multiply-and-accumulate value voltage generator is configured to generate a maximum partial multiply-and-accumulate value according to at least one input value. A prediction-aware global reference voltage generator is configured to generate a plurality of global reference voltages, a maximum reference voltage and a selected minimum reference voltage. A maximum partial multiply-and-accumulate value zone detector is configured to generate a zone switch signal by comparing the maximum partial multiply-and-accumulate value and the global reference voltages.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: August 16, 2022
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Meng-Fan Chang, Jian-Wei Su, Je-Min Hung, Chuan-Jia Jhang, Ping-Chun Wu, Jin-Sheng Ren
  • Patent number: 11362000
    Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
    Type: Grant
    Filed: May 1, 2020
    Date of Patent: June 14, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
  • Patent number: 11355638
    Abstract: A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: June 7, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lien Huang, Meng-Chun Chang
  • Publication number: 20210272849
    Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
  • Publication number: 20200357915
    Abstract: A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Yu-Lien HUANG, Meng-Chun CHANG
  • Publication number: 20200258784
    Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
    Type: Application
    Filed: May 1, 2020
    Publication date: August 13, 2020
    Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
  • Patent number: 10727347
    Abstract: A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: July 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lien Huang, Meng-Chun Chang
  • Patent number: 10651091
    Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: May 12, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
  • Publication number: 20190252261
    Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 15, 2019
    Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
  • Patent number: 10269649
    Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: April 23, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
  • Publication number: 20190097039
    Abstract: A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.
    Type: Application
    Filed: November 30, 2018
    Publication date: March 28, 2019
    Inventors: Yu-Lien HUANG, Meng-Chun CHANG
  • Patent number: 10164106
    Abstract: A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Lien Huang, Meng-Chun Chang
  • Patent number: 10115597
    Abstract: A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: October 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun Hsiung Tsai, Chi-Yuan Shih, Gin-Chen Huang, Clement Hsingjen Wann, Li-Chi Yu, Chin-Hsiang Lin, Ling-Yen Yeh, Meng-Chun Chang, Neng-Kuo Chen, Sey-Ping Sun, Ta-Chun Ma, Yen-Chun Huang
  • Publication number: 20180219077
    Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.
    Type: Application
    Filed: March 28, 2018
    Publication date: August 2, 2018
    Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
  • Publication number: 20180190809
    Abstract: A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a wiring pattern formed on the ILD layer and a contact formed in the ILD layer and physically and electrically connecting the wiring pattern to a conductive region of the electronic device. An insulating liner layer is provided on sidewalls of the contact between the contact and the ILD layer. A height of the insulating liner layer measured from a top of the conductive region of the electronic device is less than 90% of a height of the contact measured between the top of the conductive region and a level of an interface between the ILD layer and the wiring pattern.
    Type: Application
    Filed: April 12, 2017
    Publication date: July 5, 2018
    Inventors: Yu-Lien HUANG, Meng-Chun CHANG