Abstract: A camera device with image compensation and autofocus function, comprising a first carrying member, a second carrying member, a camera module, a first optical compensation component, a third carrying member, and an autofocus component. The second carrying member is movably assembled to the first carrying member. The first optical compensation component comprises a first force interaction member disposed at the first carrying member and a second force interaction member disposed at the second carrying member, which generate force interaction, allowing the second carrying member to move in the direction of a first axis or/and a second axis intersecting with an optical axis of the optical lens for optical compensation for the optical lens. The third carrying member bears the optical lens and is movably disposed on the second carrying member. The third carrying member could move along an optical axis of the optical lens.

Abstract: An image processing device is provided. The device includes an electronic image stabilization (EIS) module and an image signal processing (ISP) module. The EIS module is configured to determine EIS information for a video frame based on motion information that corresponds to the video frame, wherein the EIS information is associated with the target region and the margin region of the video frame. The ISP module is configured to generate a processed video frame based on the EIS information by performing an ISP process only on the target region of the video frame and skipping the ISP process on the margin region of the video frame. The EIS module is further configured to generate a stabilized image based on the EIS information and the processed video frame.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Abstract: A camera device with image compensation and autofocus function, comprising a first carrying member, a second carrying member, a camera module, a first optical compensation component, a third carrying member, and an autofocus component. The second carrying member is movably assembled to the first carrying member. The first optical compensation component comprises a first force interaction member disposed at the first carrying member and a second force interaction member disposed at the second carrying member, which generate force interaction, allowing the second carrying member to move in the direction of a first axis or/and a second axis intersecting with an optical axis of the optical lens for optical compensation for the optical lens. The third carrying member bears the optical lens and is movably disposed on the second carrying member. The third carrying member could move along an optical axis of the optical lens.

Abstract: A prediction processing system includes a processing circuit and a reference data buffer. The processing circuit performs a first inter prediction operation upon a first prediction block in a frame to generate a first inter prediction result, and further performs a second inter prediction operation upon a second prediction block during a first period. The reference data buffer buffers a reference data derived from the first inter prediction result. The processing circuit further fetches the reference data from the reference data buffer, and performs a non-inter prediction operation according to at least the reference data during a second period, wherein the second period overlaps the first period.

Abstract: A copolyester is formed by copolymerizing a depolymerized polyester and succinic acid. The depolymerized polyester includes depolymerized polyethylene terephthalate (PET), and the depolymerized PET is formed by depolymerizing PET with ethylene glycol. The repeating unit of PET and the succinic acid have a molar ratio of 40:60 to 50:50. The repeating unit of PET and the ethylene glycol have a molar ratio of 100:100 to 100:500. The copolyester has a storage modulus of 1*104 Pa to 1*106 Pa at 80° C. The copolyester can be used in a hot melt adhesive.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Abstract: A particles capturing system includes a venturi filter device, a cyclone filter device, a plurality of first nozzles and air to flow through the system. The venturi filter device has an air intake portion, a neck portion and an air outlet portion. The cyclone filter device, disposed in the air outlet portion, has an entrance and an exit. The plurality of first nozzles, disposed inside the venturi filter device, have a height greater than that of the the neck portion. When the air flows, the air enters the venturi filter device via an air inlet of the air intake portion, then orderly passes through the neck portion and the plurality of first nozzles, then enters the cyclone filter device via the entrance, and finally leaves the cyclone filter device via the exit, such that particles in the flowing air can be captured.

Abstract: A particles capturing system includes a venturi filter device, a cyclone filter device, a plurality of first nozzles and air to flow through the system. The venturi filter device has an air intake portion, a neck portion and an air outlet portion. The cyclone filter device, disposed in the air outlet portion, has an entrance and an exit. The plurality of first nozzles, disposed inside the venturi filter device, have a height greater than that of the the neck portion. When the air flows, the air enters the venturi filter device via an air inlet of the air intake portion, then orderly passes through the neck portion and the plurality of first nozzles, then enters the cyclone filter device via the entrance, and finally leaves the cyclone filter device via the exit, such that particles in the flowing air can be captured.

Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.

Abstract: A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.

Abstract: A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.

Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.

Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.

Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.

Abstract: The invention provides a method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, comprising: (S1) forming a pad oxide pattern on a silicon substrate having a recess exposing a tunnel region of the silicon substrate; (S2) forming a bottom oxide layer, a nitride layer, a top oxide layer covering the recess and the pad oxide pattern to form a first ONO structure; (S3) forming a photoresist on the first ONO structure covering the recess and a peripheral region of the pad oxide pattern; (S4) removing a part of the first ONO structure exposed by the photoresist to form an U-shaped ONO structure; (S5) trimming the photoresist to exposed a part of the U-shaped ONO structure above the recess; (S6) removing the part of the U-shaped ONO structure; (S7) removing the photoresist; (S8) removing the pad oxide pattern and the top oxide layer; and (S9) forming a gate structure.

Abstract: A sound system (30) for a portable electronic device (20) is provided. The sound system includes a sound generator (28), a sound processor (25), and a speaker subsystem (24). The sound generator is configured for generating sound recordings with single sound format. The sound processor electronically connects with the sound generator and is configured for receiving the sound recordings with single sound format transmitted from the sound processor. The sound processor is configured for processing the sound recordings with single sound format into sound recordings with 5.1 surround format. The speaker subsystem electronically connects with the sound processor and is configured for receiving the sound recordings with 5.1 surround format transmitted from the sound processor and playing the sound recordings with 5.1 surround format.

Abstract: A method for increasing ring tone volume is provided. The method includes steps of: reading an audio file which is set as a current ring tone; determining whether the ring tone is a MP3 audio file or a musical instrument digital interface (MIDI) audio file; adjusting frequencies by using an equalizer technique to increase volume of the ring tone if the ring tone is the MP3 audio file; adjusting a volume level of the ring tone to be the highest volume level, and adjusting timbre of the ring tone to increase the ring tone volume by simulating a musical score of the ring tone by using different instruments if the ring tone is the MIDI audio file. A related system is also provided.

Abstract: A method for adjusting frequency response curve of a speaker comprises these steps: testing sensitivity of the speaker in at least two types of hardware conditions and recording corresponding frequency response curves; selecting a frequency response curve that comes closest to falling within a predetermined range for selected frequency ranges; and adjusting the selected frequency response curve with a filter.

Abstract: An exemplary method for locating sound sources is disclosed. The method includes the steps of: loading a sound source location program into a handheld device; activating the sound source location program; calculating a total voltage representing sound waves received by a microphone array via a waveform computation algorithm; calculating energy intensities of the total voltage according to the total voltage; and selecting a maximum energy intensity from the calculated energy intensities, and determining the location of the maximum energy intensity, the location of the maximum energy intensity is the location of the sound source. A related system is also disclosed.