Abstract: A copolyester is formed by copolymerizing a depolymerized polyester and succinic acid. The depolymerized polyester includes depolymerized polyethylene terephthalate (PET), and the depolymerized PET is formed by depolymerizing PET with ethylene glycol. The repeating unit of PET and the succinic acid have a molar ratio of 40:60 to 50:50. The repeating unit of PET and the ethylene glycol have a molar ratio of 100:100 to 100:500. The copolyester has a storage modulus of 1*104 Pa to 1*106 Pa at 80° C. The copolyester can be used in a hot melt adhesive.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Abstract: A particles capturing system includes a venturi filter device, a cyclone filter device, a plurality of first nozzles and air to flow through the system. The venturi filter device has an air intake portion, a neck portion and an air outlet portion. The cyclone filter device, disposed in the air outlet portion, has an entrance and an exit. The plurality of first nozzles, disposed inside the venturi filter device, have a height greater than that of the the neck portion. When the air flows, the air enters the venturi filter device via an air inlet of the air intake portion, then orderly passes through the neck portion and the plurality of first nozzles, then enters the cyclone filter device via the entrance, and finally leaves the cyclone filter device via the exit, such that particles in the flowing air can be captured.

Abstract: A particles capturing system includes a venturi filter device, a cyclone filter device, a plurality of first nozzles and air to flow through the system. The venturi filter device has an air intake portion, a neck portion and an air outlet portion. The cyclone filter device, disposed in the air outlet portion, has an entrance and an exit. The plurality of first nozzles, disposed inside the venturi filter device, have a height greater than that of the the neck portion. When the air flows, the air enters the venturi filter device via an air inlet of the air intake portion, then orderly passes through the neck portion and the plurality of first nozzles, then enters the cyclone filter device via the entrance, and finally leaves the cyclone filter device via the exit, such that particles in the flowing air can be captured.

Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.

Abstract: A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.

Abstract: A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.

Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.

Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.

Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.

Abstract: The invention provides a method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, comprising: (S1) forming a pad oxide pattern on a silicon substrate having a recess exposing a tunnel region of the silicon substrate; (S2) forming a bottom oxide layer, a nitride layer, a top oxide layer covering the recess and the pad oxide pattern to form a first ONO structure; (S3) forming a photoresist on the first ONO structure covering the recess and a peripheral region of the pad oxide pattern; (S4) removing a part of the first ONO structure exposed by the photoresist to form an U-shaped ONO structure; (S5) trimming the photoresist to exposed a part of the U-shaped ONO structure above the recess; (S6) removing the part of the U-shaped ONO structure; (S7) removing the photoresist; (S8) removing the pad oxide pattern and the top oxide layer; and (S9) forming a gate structure.

Abstract: A sound system (30) for a portable electronic device (20) is provided. The sound system includes a sound generator (28), a sound processor (25), and a speaker subsystem (24). The sound generator is configured for generating sound recordings with single sound format. The sound processor electronically connects with the sound generator and is configured for receiving the sound recordings with single sound format transmitted from the sound processor. The sound processor is configured for processing the sound recordings with single sound format into sound recordings with 5.1 surround format. The speaker subsystem electronically connects with the sound processor and is configured for receiving the sound recordings with 5.1 surround format transmitted from the sound processor and playing the sound recordings with 5.1 surround format.

Abstract: A method for increasing ring tone volume is provided. The method includes steps of: reading an audio file which is set as a current ring tone; determining whether the ring tone is a MP3 audio file or a musical instrument digital interface (MIDI) audio file; adjusting frequencies by using an equalizer technique to increase volume of the ring tone if the ring tone is the MP3 audio file; adjusting a volume level of the ring tone to be the highest volume level, and adjusting timbre of the ring tone to increase the ring tone volume by simulating a musical score of the ring tone by using different instruments if the ring tone is the MIDI audio file. A related system is also provided.

Abstract: A method for adjusting frequency response curve of a speaker comprises these steps: testing sensitivity of the speaker in at least two types of hardware conditions and recording corresponding frequency response curves; selecting a frequency response curve that comes closest to falling within a predetermined range for selected frequency ranges; and adjusting the selected frequency response curve with a filter.

Abstract: An exemplary method for locating sound sources is disclosed. The method includes the steps of: loading a sound source location program into a handheld device; activating the sound source location program; calculating a total voltage representing sound waves received by a microphone array via a waveform computation algorithm; calculating energy intensities of the total voltage according to the total voltage; and selecting a maximum energy intensity from the calculated energy intensities, and determining the location of the maximum energy intensity, the location of the maximum energy intensity is the location of the sound source. A related system is also disclosed.

Abstract: A method for controlling a cleaning device is presented, which includes the following steps. A cleaning device includes a control unit, a fan module, an optical emitter, and an optical sensor. The optical emitter and the optical sensor are located in an air inlet of the fan module. The control unit is preset with a first impedance value (Z1), a second impedance value (Z2), and a threshold, where 0<Z1<Z2. Then, the control unit reads an impedance value (Z) of the fan module. If Z1<Z<Z2, the control unit drives the fan module. If Z2<Z, the control unit reads a detected value of the optical sensor. If the detected value exceeds the threshold, the control unit drives the fan module, so as to increase a suction force of the fan module. If the detected value is smaller than the threshold, the control unit turns off the fan module.

Abstract: A portable electronic device (100) includes a body (10) and a housing (30). The body has a speaker (20) and a groove (13). The speaker is received in the groove. The housing defines at least one main hole (34) and two subsidiary holes (35). The subsidiary holes is disposed adjacent to the at least one main hole.

Abstract: A portable electronic device (100) includes a main body (10) having at least one cavity (131) defined therein, at least one speaker device (20) being movable received in the cavity of the main body, and at least one latching mechanism (30) movably attached to the main body. The speaker device has a resonant chamber (28) defined therein, and a positioning stop member (262) extending therefrom. Each resonant chamber communicates with a corresponding cavity. The at least one latching mechanism includes a latching body (31), and the latching body is configured for selectably engaging with the positioning stop member to enable control of movement of a corresponding speaker device relative to the main body.

Abstract: A robotic vacuum cleaner is disclosed in the present invention, which comprises a controller, at least a driving wheel module, and a dust-collecting module. The controller is disposed on a housing plate. The driving wheel module, electrically connecting to the controller, further includes: a driver; a wheel connecting to the output shaft of the driver; a linkage rod, having two ends pivotally fixed on the housing plate and the driver respectively; and a resilience element, having two ends pivotally connected to the housing plate and the driver respectively. The dust-collecting module, disposed on the housing plate, is capable of vacuuming for filtering and collecting dust.

Abstract: An intelligent classification method is proposed. The method extracts vocal features from the temporal domain, spectral domain and statistical features for measuring the vocal signal. The measured result is grouped by comparing with the trained data with single voiced source, and then different voices can be separated from the vocal signal to be classified. The vocal features are evaluated from temporal domain and spectral domain and the statistical features, and the method can improve the accuracy of the voice classification.