Patents by Inventor Meng Hsin Yeh
Meng Hsin Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240145627Abstract: An epitaxial structure of a semiconductor light-emitting element includes an n-type layer, a V-pit control layer, a light-emitting layer, and a p-type layer stacked from bottom to top. The light-emitting layer includes a plurality of well layers and a plurality of barrier layers stacked alternately. The V-pit control layer includes a first superlattice layer, and a distance between a bottom surface of the V-pit control layer and a bottom surface of the first superlattice layer is less than or equal to 0.15 ?m. The bottom surface of the first superlattice layer and a bottom surface of the light-emitting layer have a distance therebetween ranging from 0.05 ?m to 0.3 ?m, and each of the first superlattice layer and the light-emitting layer is an Indium (In)-containing layer. A semiconductor light-emitting element and a light-emitting device are also provided.Type: ApplicationFiled: October 31, 2023Publication date: May 2, 2024Inventors: Meng-Hsin YEH, Zhousheng JIANG, Bing-Yang CHEN, Dongpo CHEN, Chung-Ying CHANG
-
Patent number: 11870010Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.Type: GrantFiled: March 31, 2022Date of Patent: January 9, 2024Assignee: Xiamen San'An Optoelectronics Co., Ltd.Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Yun-Ming Lo, Chien-Yao Tseng, Chung-Ying Chang
-
Publication number: 20230122025Abstract: A semiconductor light emitting device includes an epitaxial light emitting structure that includes a light emitting component. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have first, second and third energy bandgaps (Eg1, Eg2, Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. The third layer has a thickness smaller than that of the first layer. Also disclosed herein is another embodiment of the aforementioned semiconductor light emitting device.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Inventors: Wen-Yu LIN, Meng-Hsin YEH, Yun-Ming LO, Chien-Yao TSENG, Chung-Ying CHANG
-
Patent number: 11538960Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.Type: GrantFiled: November 12, 2020Date of Patent: December 27, 2022Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTDInventors: Wen-Yu Lin, Meng-Hsin Yeh, Yun-Ming Lo, Chien-Yao Tseng, Chung-Ying Chang
-
Publication number: 20220223758Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.Type: ApplicationFiled: March 31, 2022Publication date: July 14, 2022Inventors: Wen-Yu LIN, Meng-Hsin YEH, Yun-Ming LO, Chien-Yao TSENG, Chung-Ying CHANG
-
Patent number: 11296256Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg1, Eg2, and Eg3 which satisfy a relationship of Eg1<Eg2<Eg3. In addition, Eg3 is greater than an energy band gap of the P-type electron-blocking layer.Type: GrantFiled: May 26, 2020Date of Patent: April 5, 2022Assignee: Xiamen San'An Optoelectronics Co., Ltd.Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Yun-Ming Lo, Chien-Yao Tseng, Chung-Ying Chang
-
Publication number: 20220013685Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.Type: ApplicationFiled: November 12, 2020Publication date: January 13, 2022Inventors: WEN-YU LIN, MENG-HSIN YEH, YUN-MING LO, CHIEN-YAO TSENG, CHUNG-YING CHANG
-
Publication number: 20210066542Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.Type: ApplicationFiled: November 12, 2020Publication date: March 4, 2021Inventors: WEN-YU LIN, MENG-HSIN YEH, YUN-MING LO, CHIEN-YAO TSENG, CHUNG-YING CHANG
-
Publication number: 20200287083Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg1, Eg2, and Eg3 which satisfy a relationship of Eg1<Eg2<Eg3. In addition, Eg3 is greater than an energy band gap of the P-type electron-blocking layer.Type: ApplicationFiled: May 26, 2020Publication date: September 10, 2020Inventors: WEN-YU LIN, MENG-HSIN YEH, YUN-MING LO, CHIEN-YAO TSENG, CHUNG-YING CHANG
-
Patent number: 9705033Abstract: A lighting emitting diode including: an n side layer and a p side layer formed by nitride semiconductors respectively; an active layer comprising a nitride semiconductor is between the n side layer and the p side layer; wherein, the n-side layer is successively laminated by an extrinsically-doped buffer layer and a compound multi-current spreading layer; the compound multi-current spreading layer is successively-laminated by a first current spreading layer, a second current spreading layer and a third current spreading layer; the first current spreading layer and the third current spreading layer are alternatively-laminated layers comprising a u-type nitride semiconductor layer and an n-type nitride semiconductor layer; the second current spreading layer is a distributed insulation layer formed on the n-type nitride semiconductor layer; and the first current spreading layer is adjacent to the extrinsically-doped buffer layer; and the third current spreading layer is adjacent to the active layer.Type: GrantFiled: November 3, 2014Date of Patent: July 11, 2017Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Meng-Hsin Yeh, Jyh-Chiarng Wu
-
Patent number: 9570654Abstract: A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.Type: GrantFiled: June 17, 2015Date of Patent: February 14, 2017Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Zhibai Zhong
-
Patent number: 9397253Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.Type: GrantFiled: January 7, 2013Date of Patent: July 19, 2016Inventors: Meng-Hsin Yeh, Jyh-Chiarng Wu, Shaohua Huang, Chi-Lun Chou
-
Publication number: 20160153119Abstract: A Group-III nitrides epitaxial structure includes a Si substrate, and a Group-III nitrides layer disposed over the Si substrate, wherein an interface structure of “coexistence of Al atoms and SixNy” between the Si substrate and the Group-III nitrides. Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides; and SixNy are configured to release mismatch stress caused by heteroepitaxy. A fabricating method comprises: (1) providing a Si substrate; (2) forming an interface structure over a surface of the Si substrate , wherein the interface structure is arranged with both Al atoms and SixNy, which are then cladded by an AlN epitaxial layer; and (3) growing Group-III nitrides over the interface structure wherein the Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides and the SixNy is configured to release mismatch stress generated by heteroepitaxy.Type: ApplicationFiled: February 4, 2016Publication date: June 2, 2016Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: YANHAO DU, MENG-HSIN YEH, CHEN-KE HSU, CHIH-WEI CHAO, WENYU LIN, YI-SHIN YE, JEN-CHUN YANG, JIANMING LIU
-
Patent number: 9324907Abstract: A light emitting diode (LED) includes an active layer having one or more multilayer potential barriers and at least one well layer. Each multilayer potential barrier includes interlacing first and second InAlGaN thin layers. The first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced.Type: GrantFiled: January 17, 2013Date of Patent: April 26, 2016Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Meng-Hsin Yeh, Jyh-Chiarng Wu, Guojun Lu
-
Patent number: 9312438Abstract: An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InxAlyGa1-x-yN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature H2 in-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.Type: GrantFiled: May 21, 2015Date of Patent: April 12, 2016Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Kechuang Lin
-
Publication number: 20150311389Abstract: A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.Type: ApplicationFiled: June 17, 2015Publication date: October 29, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: WEN-YU LIN, MENG-HSIN YEH, ZHIBAI ZHONG
-
Publication number: 20150270439Abstract: An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InxAlyGa1-x-yN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature H2 in-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.Type: ApplicationFiled: May 21, 2015Publication date: September 24, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: WEN-YU LIN, MENG-HSIN YEH, KECHUANG LIN
-
Publication number: 20150053920Abstract: A lighting emitting diode including: an n side layer and a p side layer formed by nitride semiconductors respectively; an active layer comprising a nitride semiconductor is between the n side layer and the p side layer; wherein, the n-side layer is successively laminated by an extrinsically-doped buffer layer and a compound multi-current spreading layer; the compound multi-current spreading layer is successively-laminated by a first current spreading layer, a second current spreading layer and a third current spreading layer; the first current spreading layer and the third current spreading layer are alternatively-laminated layers comprising a u-type nitride semiconductor layer and an n-type nitride semiconductor layer; the second current spreading layer is a distributed insulation layer formed on the n-type nitride semiconductor layer; and the first current spreading layer is adjacent to the extrinsically-doped buffer layer; and the third current spreading layer is adjacent to the active layer.Type: ApplicationFiled: November 3, 2014Publication date: February 26, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: MENG-HSIN YEH, JYH-CHIARNG WU
-
Publication number: 20150048379Abstract: Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×1018 cm3 is formed on the n side of a light emitting epitaxy layer; when a growth substrate is removed, the n-type ohm contact buffer layer on the surface is exposed, which is a no-nitride polarity-face n-type GaN base material with a lower energy gap; an n-type ohm contact electrode is prepared on the n-type ohm contact buffer layer and follows the Ti/Al ohm contact electrode, which can overcome the problem of the existing vertical gallium nitride-based vertical light emitting diode that the voltage of the thin film GaN base light emitting device is unreliable because the ohm contact electrode on the nitride-face GaN base semiconductor layer is easy to crack due to temperature.Type: ApplicationFiled: January 7, 2013Publication date: February 19, 2015Inventors: Meng-Hsin Yeh, Jyh-Chiarng Wu, Shaohua Huang, Chi-Lun Chou
-
Patent number: 8860044Abstract: A nitride light-emitting diode is provided including a current spreading layer. The current spreading layer includes a first layer having a plurality of distributed insulating portions configured to have electrical current flow therebetween; and a second layer including interlaced at least one substantially undoped nitride semiconductor layer and at least one n-type nitride semiconductor layer configured to spread laterally the electrical current from the first layer.Type: GrantFiled: July 18, 2012Date of Patent: October 14, 2014Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.Inventors: Meng-hsin Yeh, Jyh-Chiamg Wu, Shao-hua Huang, Chi-lun Chou, Hsing-wei Lu, Kechuang Lin