Patents by Inventor Meng Hsin Yeh

Meng Hsin Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride Light-Emitting Diode with a Current Spreading Layer
    Publication number: 20120280258
    Abstract: A nitride light-emitting diode is provided including a current spreading layer.
    Type: Application
    Filed: July 18, 2012
    Publication date: November 8, 2012
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Meng-hsin YEH, Jyh-Chiamg Wu, Shao-hua Huang, Chi-lun Chou, Hsing-wei Lu, Kechuang Lin
  • Method for manufacturing GaN-based film LED
    Patent number: 7955959
    Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.
    Type: Grant
    Filed: September 23, 2010
    Date of Patent: June 7, 2011
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Jyh Chiarng Wu, Xuejiao Lin, Qunfeng Pan, Meng Hsin Yeh, Huijun Huang
  • METHOD FOR MANUFACTURING GaN-BASED FILM LED
    Publication number: 20110076791
    Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.
    Type: Application
    Filed: September 23, 2010
    Publication date: March 31, 2011
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jyh Chiarng WU, Xuejiao LIN, Qunfeng PAN, Meng Hsin YEH, Huijun HUANG