Patents by Inventor Meng-Hsun Wan
Meng-Hsun Wan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230207530Abstract: A device comprises a first chip comprising a first connection pad embedded in a first dielectric layer and a first bonding pad embedded in the first dielectric layer, wherein the first bonding pad comprises a first portion and a second portion, the second portion being in contact with the first connection pad and a second chip comprising a second bonding pad embedded in a second dielectric layer of the second chip, wherein the first chip and the second chip are face-to-face bonded together through the first bonding pad the second bonding pad.Type: ApplicationFiled: February 17, 2023Publication date: June 29, 2023Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Patent number: 11587910Abstract: A device comprises a first chip comprising a first connection pad embedded in a first dielectric layer and a first bonding pad embedded in the first dielectric layer, wherein the first bonding pad comprises a first portion and a second portion, the second portion being in contact with the first connection pad and a second chip comprising a second bonding pad embedded in a second dielectric layer of the second chip, wherein the first chip and the second chip are face-to-face bonded together through the first bonding pad the second bonding pad.Type: GrantFiled: April 6, 2021Date of Patent: February 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Publication number: 20210225813Abstract: A device comprises a first chip comprising a first connection pad embedded in a first dielectric layer and a first bonding pad embedded in the first dielectric layer, wherein the first bonding pad comprises a first portion and a second portion, the second portion being in contact with the first connection pad and a second chip comprising a second bonding pad embedded in a second dielectric layer of the second chip, wherein the first chip and the second chip are face-to-face bonded together through the first bonding pad the second bonding pad.Type: ApplicationFiled: April 6, 2021Publication date: July 22, 2021Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Patent number: 11037909Abstract: A device comprises a first chip comprising a first connection pad embedded in a first dielectric layer and a first bonding pad embedded in the first dielectric layer, wherein the first bonding pad comprises a first portion and a second portion, the second portion being in contact with the first connection pad and a second chip comprising a second bonding pad embedded in a second dielectric layer of the second chip, wherein the first chip and the second chip are face-to-face bonded together through the first bonding pad the second bonding pad.Type: GrantFiled: November 11, 2019Date of Patent: June 15, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Patent number: 10930699Abstract: A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.Type: GrantFiled: October 3, 2019Date of Patent: February 23, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung, Pao-Tung Chen, Jen-Cheng Liu
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Publication number: 20200075556Abstract: A device comprises a first chip comprising a first connection pad embedded in a first dielectric layer and a first bonding pad embedded in the first dielectric layer, wherein the first bonding pad comprises a first portion and a second portion, the second portion being in contact with the first connection pad and a second chip comprising a second bonding pad embedded in a second dielectric layer of the second chip, wherein the first chip and the second chip are face-to-face bonded together through the first bonding pad the second bonding pad.Type: ApplicationFiled: November 11, 2019Publication date: March 5, 2020Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Publication number: 20200035743Abstract: A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.Type: ApplicationFiled: October 3, 2019Publication date: January 30, 2020Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung, Pao-Tung Chen, Jen-Cheng Liu
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Patent number: 10510730Abstract: A device comprises a first chip comprising a first connection pad embedded in a first dielectric layer and a first bonding pad embedded in the first dielectric layer, wherein the first bonding pad comprises a first portion and a second portion, the second portion being in contact with the first connection pad and a second chip comprising a second bonding pad embedded in a second dielectric layer of the second chip, wherein the first chip and the second chip are face-to-face bonded together through the first bonding pad the second bonding pad.Type: GrantFiled: December 17, 2018Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Patent number: 10510791Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.Type: GrantFiled: August 27, 2018Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Hsun Wan, Yi-Shin Chu, Szu-Ying Chen, Pao-Tung Chen, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 10475843Abstract: A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.Type: GrantFiled: May 9, 2016Date of Patent: November 12, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung, Pao-Tung Chen, Jen-Cheng Liu
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Publication number: 20190123026Abstract: A device comprises a first chip comprising a first connection pad embedded in a first dielectric layer and a first bonding pad embedded in the first dielectric layer, wherein the first bonding pad comprises a first portion and a second portion, the second portion being in contact with the first connection pad and a second chip comprising a second bonding pad embedded in a second dielectric layer of the second chip, wherein the first chip and the second chip are face-to-face bonded together through the first bonding pad the second bonding pad.Type: ApplicationFiled: December 17, 2018Publication date: April 25, 2019Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Publication number: 20190013345Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.Type: ApplicationFiled: August 27, 2018Publication date: January 10, 2019Inventors: Meng-Hsun Wan, Yi-Shin Chu, Szu-Ying Chen, Pao-Tung Chen, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 10157889Abstract: A method comprises depositing a first dielectric layer over a first chip comprising a plurality of first active circuits and a first connection pad, patterning the first dielectric layer to form a first opening, filling the first opening to form a connector in contact with the first connection pad, depositing a second dielectric layer over the first dielectric layer, patterning the second dielectric layer to form a second opening over the connector, filling the second opening to form a first bonding pad in contact with the connector, stacking a second chip on the first chip, wherein the second chip comprises a plurality of second active circuits and a second bonding pad and bonding the first chip and a second chip together to form a stacked semiconductor device through applying a hybrid bonding process to the first bonding pad and the second bonding pad.Type: GrantFiled: July 24, 2017Date of Patent: December 18, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Patent number: 10090349Abstract: A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.Type: GrantFiled: August 9, 2012Date of Patent: October 2, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Hsun Wan, Szu-Ying Chen, Dun-Nian Yaung, Jen-Cheng Liu
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Patent number: 10062721Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.Type: GrantFiled: December 14, 2016Date of Patent: August 28, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Hsun Wan, Yi-Shin Chu, Szu-Ying Chen, Pao-Tung Chen, Jen-Cheng Liu, Dun-Nian Yaung
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Publication number: 20170323869Abstract: A method comprises depositing a first dielectric layer over a first chip comprising a plurality of first active circuits and a first connection pad, patterning the first dielectric layer to form a first opening, filling the first opening to form a connector in contact with the first connection pad, depositing a second dielectric layer over the first dielectric layer, patterning the second dielectric layer to form a second opening over the connector, filling the second opening to form a first bonding pad in contact with the connector, stacking a second chip on the first chip, wherein the second chip comprises a plurality of second active circuits and a second bonding pad and bonding the first chip and a second chip together to form a stacked semiconductor device through applying a hybrid bonding process to the first bonding pad and the second bonding pad.Type: ApplicationFiled: July 24, 2017Publication date: November 9, 2017Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Patent number: 9716078Abstract: A device comprises a first chip comprising a plurality of first interconnect structures over a first substrate, a plurality of first connection pads over the plurality of first interconnect structures and a plurality of first bonding pads, wherein a first bonding pad is formed over a corresponding first connection pad, and a second chip comprising a plurality of second interconnect structures over a second substrate and a plurality of second bonding pads over the plurality of second interconnect structures, wherein the first chip and the second chip are face-to-face bonded together, and wherein a first bonding pad is in direct contact with a corresponding second bonding pad.Type: GrantFiled: February 8, 2016Date of Patent: July 25, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Meng-Hsun Wan, Dun-Nian Yaung
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Publication number: 20170092679Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.Type: ApplicationFiled: December 14, 2016Publication date: March 30, 2017Inventors: Meng-Hsun Wan, Yi-Shin Chu, Szu-Ying Chen, Pao-Tung Chen, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 9530811Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.Type: GrantFiled: August 31, 2015Date of Patent: December 27, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Hsun Wan, Yi-Shin Chu, Szu-Ying Chen, Pao-Tung Chen, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 9443836Abstract: A device includes a first chip including an image sensor therein, and a second chip bonded to the first chip. The second chip includes a logic device selected from the group consisting essentially of a reset transistor, a selector, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit.Type: GrantFiled: November 21, 2014Date of Patent: September 13, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Meng-Hsun Wan, Tzu-Jui Wang, Dun-Nian Yaung, Jen-Cheng Liu