Abstract: A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.

Abstract: A device includes a plurality of isolation spacers, and a plurality of bottom electrodes, wherein adjacent ones of the plurality of bottom electrodes are insulated from each other by respective ones of the plurality of isolation spacers. A plurality of photoelectrical conversion regions overlaps the plurality of bottom electrodes, wherein adjacent ones of the plurality of photoelectrical conversion regions are insulated from each other by respective ones of the plurality of isolation spacers. A top electrode overlies the plurality of photoelectrical conversion regions and the plurality of isolation spacers.

Abstract: A device comprises a first chip comprising a plurality of first interconnect structures over a first substrate, a plurality of first connection pads over the plurality of first interconnect structures and a plurality of first bonding pads, wherein a first bonding pad is formed over a corresponding first connection pad, and a second chip comprising a plurality of second interconnect structures over a second substrate and a plurality of second bonding pads over the plurality of second interconnect structures, wherein the first chip and the second chip are face-to-face bonded together, and wherein a first bonding pad is in direct contact with a corresponding second bonding pad.

Abstract: A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.

Abstract: A method for forming a stacked semiconductor structure comprises providing a first chip comprising a plurality of first active circuits and a first aluminum connection pad, depositing a first dielectric layer on a first side of the first chip, forming a first copper bonding pad on the first aluminum connection pad, providing a second chip comprising a plurality of second active circuits, depositing a second dielectric layer on a first side of the second chip, forming a second copper bonding pad in the second dielectric layer, stacking the first chip on the second chip, wherein the first copper bonding pad is in direct contact with the second copper bonding pad and bonding the first chip and the second chip to form a uniform bonded feature.

Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.

Abstract: A method for forming a stacked semiconductor structure comprises providing a first chip comprising a plurality of first active circuits and a first aluminum connection pad, depositing a first dielectric layer on a first side of the first chip, forming a first copper bonding pad on the first aluminum connection pad, providing a second chip comprising a plurality of second active circuits, depositing a second dielectric layer on a first side of the second chip, forming a second copper bonding pad in the second dielectric layer, stacking the first chip on the second chip, wherein the first copper bonding pad is in direct contact with the second copper bonding pad and bonding the first chip and the second chip to form a uniform bonded feature.

Abstract: A device includes a first chip including an image sensor therein, and a second chip bonded to the first chip. The second chip includes a logic device selected from the group consisting essentially of a reset transistor, a selector, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit.

Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.

Abstract: A device includes a plurality of isolation spacers, and a plurality of bottom electrodes, wherein adjacent ones of the plurality of bottom electrodes are insulated from each other by respective ones of the plurality of isolation spacers. A plurality of photoelectrical conversion regions overlaps the plurality of bottom electrodes, wherein adjacent ones of the plurality of photoelectrical conversion regions are insulated from each other by respective ones of the plurality of isolation spacers. A top electrode overlies the plurality of photoelectrical conversion regions and the plurality of isolation spacers.

Abstract: A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.

Abstract: A device includes a first chip including an image sensor therein, and a second chip bonded to the first chip. The second chip includes a logic device selected from the group consisting essentially of a reset transistor, a selector, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit.

Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.

Abstract: A device includes an image sensor chip including an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip. The read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip. The peripheral circuit chip includes a logic circuit, a through via penetrating through a semiconductor substrate of the peripheral circuit chip, and an electrical connector at a bottom surface of the peripheral circuit chip. The electrical connector is electrically coupled to the logic circuit in the peripheral circuit chip through the through via.

Abstract: A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.

Abstract: A device includes a plurality of isolation spacers, and a plurality of bottom electrodes, wherein adjacent ones of the plurality of bottom electrodes are insulated from each other by respective ones of the plurality of isolation spacers. A plurality of photoelectrical conversion regions overlaps the plurality of bottom electrodes, wherein adjacent ones of the plurality of photoelectrical conversion regions are insulated from each other by respective ones of the plurality of isolation spacers. A top electrode overlies the plurality of photoelectrical conversion regions and the plurality of isolation spacers.

Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.

Abstract: A device includes an image sensor chip including an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip. The read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip. The peripheral circuit chip includes a logic circuit, a through via penetrating through a semiconductor substrate of the peripheral circuit chip, and an electrical connector at a bottom surface of the peripheral circuit chip. The electrical connector is electrically coupled to the logic circuit in the peripheral circuit chip through the through via.

Abstract: A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.

Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.