Abstract: A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material.

Abstract: A package on package structure providing mechanical strength and warpage control includes a first package component coupled to a second package component by a first set of conductive elements. A first polymer-comprising material is arranged between the first package component and the second package component. The first polymer-comprising material surrounds the first set of conductive elements and the second package component. A third package component is coupled to the second package component by a second set of conductive elements. An underfill is arranged on the second package component and surrounds the second set of conductive elements. The first polymer-comprising material extends past sidewalls of the underfill.

Abstract: A device includes a package component having conductive features on a top surface, and a polymer region molded over the top surface of the first package component. A plurality of openings extends from a top surface of the polymer region into the polymer region, wherein each of the conductive features is exposed through one of the plurality of openings. The plurality of openings includes a first opening having a first horizontal size, and a second opening having a second horizontal size different from the first horizontal size.

Abstract: A device comprises a bottom package comprising a plurality of metal bumps formed on a first side of the bottom package and a plurality of first bumps formed on a second side of the bottom package, a top package bonded on the bottom package, wherein the top package comprises a plurality of second bumps, and wherein second bumps and respective metal bumps form a joint structure and an underfill layer formed between the top package and the bottom package, wherein the metal bumps are embedded in the underfill layer.

Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

Abstract: The disclosure is related to a method and a system for managing multiple devices within a network system. For the purpose of configuration or firmware synchronization for the devices within a network segment, the system allows an operator to optionally select the nodes operating as different roles such as a master, synchronization-source device, and slave. A selected device being the master is embedded with a web-based management mechanism, and therefore is remotely accessible. The management program provides a management interface in response to a management link. The management interface allows the operator to instruct the master to synchronize its configuration/firmware with the other selected nodes. Alternatively, through the master, one of the nodes is selected to be the synchronization-source device, and instructed to share its configuration to the other nodes. Through this management mechanism, the multiple nodes can be synchronized as applying the configuration, or/and firmware simultaneously.

Abstract: Semiconductor dies are bonded to each other and electrically connected to each other. An encapsulant is utilized to protect the semiconductor dies and external connections are formed to connect the semiconductor dies within the encapsulant. In an embodiment the external connections may comprise conductive pillars, conductive reflowable material, or combinations of such.

Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.

Abstract: A method of forming a package on package (PoP) structure includes forming a first die package, and bonding an external connector of a second die package to a solder paste layer of the first die package. The forming the first die package includes forming a contact pad over a substrate, attaching a metal ball with a convex surface to the contact pad, and applying a solder paste layer over a distal end of the metal ball and leaving at least a portion of the metal ball without solder paste. The forming the first die package also includes attaching a semiconductor die to the substrate, and forming a molding compound between the semiconductor die and the metal ball, where the solder paste layer has a first portion extending above an upper surface of the molding compound and a second portion extending below the upper surface of the molding compound.

Abstract: A method for forming a device package includes forming a molding compound around a die and laminating a polymer layer over the die. A top surface of the die is covered by a film layer while the molding compound is formed, and the polymer layer extends laterally past edge portions of the die. The method further includes forming a conductive via in the polymer layer, wherein the conductive via is electrically connected to a contact pad at a top surface of the die.

Abstract: A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material.

Abstract: A package on package structure providing mechanical strength and warpage control includes a first package component coupled to a second package component by a first set of conductive elements. A first polymer-comprising material is arranged between the first package component and the second package component. The first polymer-comprising material surrounds the first set of conductive elements and the second package component. A third package component is coupled to the second package component by a second set of conductive elements. An underfill is arranged on the second package component and surrounds the second set of conductive elements. The first polymer-comprising material extends past sidewalls of the underfill.

Abstract: A method includes forming a first plurality of Redistribution Lines (RDLs) over a carrier, and bonding a device die to the first plurality of RDLs through flip-chip bonding. The device die and the first plurality of RDLs are over the carrier. The device die is molded in a molding material. After the molding, the carrier is detached from the first plurality of RDLs. The method further includes forming solder balls to electrically couple to the first plurality of RDLs, wherein the solder balls and the device die are on opposite sides of the first plurality of RDLs.

Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.

Abstract: Methods and apparatus for a forming molded underfills. A method is disclosed including loading a flip chip substrate into a selected one of the upper mold chase and lower mold chase of a mold press at a first temperature; positioning a molded underfill material in the at least one of the upper and lower mold chases while maintaining the first temperature which is lower than a melting temperature of the molded underfill material; forming a sealed mold cavity and creating a vacuum in the mold cavity; raising the temperature of the molded underfill material to a second temperature greater than the melting point to cause the molded underfill material to flow over the flip chip substrate forming an underfill layer and forming an overmolded layer; and cooling the flip chip substrate to a third temperature substantially lower than the melting temperature of the molded underfill material. An apparatus is disclosed.

Abstract: A conductive interconnect structure includes a contact pad; a conductive body connected to the contact pad at a first end; and a conductive layer positioned on a second end of the conductive body. The conductive body has a longitudinal direction perpendicular to a surface of the contact pad. The conductive body has an average grain size (a) on a cross sectional plane (Plane A) whose normal is perpendicular to the longitudinal direction of the conductive body. The conductive layer has an average grain size (b) on Plane A. The conductive body and the conductive layer are composed of same material, and the average grain size (a) is greater than the average grain size (b).

Abstract: The described embodiments of mechanisms of forming a die package and package on package (PoP) structure involve forming a solder paste layer over metal balls of external connectors of a die package. The solder paste layer protects the metal balls from oxidation. In addition, the solder paste layer enables solder to solder bonding with another die package. Further, the solder paste layer moves an intermetallic compound (IMC) layer formed between the solder paste layer and the metal balls below a surface of a molding compound of the die package. Having the IMC layer below the surface strengthens the bonding structure between the two die packages.

Abstract: A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material.

Abstract: A structure includes a first package component, and a second package component over and bonded to the first package component. A supporting material is disposed in a gap between the first package component and the second package component. A molding material is disposed in the gap and encircling the supporting material.

Abstract: A device package includes a die and a molding compound around the die. The molding compound has a non-planar surface recessed from a top surface of the die. The device package also includes an interconnect structure over the die. The interconnect structure includes a redistribution layer extending onto the molding compound and conformal to the non-planar surface of the molding compound. The device package further includes a first connector disposed over the die and bonded to the interconnect structure.