Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.

Abstract: A logical-to-physical (L2P) data structure comprising a plurality of L2P table entries is maintained on the volatile memory device. Each L2P table entry comprises a block number and a page table index corresponding to the non-volatile memory device. A plurality of physical-to-logical (P2L) data structures each comprising a plurality of P2L table entries is maintained on the volatile memory device. Each of the plurality of P2L data structures corresponds to a portion of the L2P data structure.

Abstract: Disclosed herein are methods, apparatuses and systems related to adjusting operation of memory dies according to reliability measures determined in real-time. The apparatus may be configured to determine the reliability measures based on (1) initiating and completing a programming operation within respective timings following an erase operation and (2) reading the programmed data within a window from completing the programming operation.

Abstract: A carbonate-epoxy copolymer includes a structure represented by formula (I), of which each symbol is defined in the specification. A curable carbonate composition includes the aforementioned carbonate-epoxy copolymer, a solvent, a first catalyst, a second catalyst, and an epoxy material. A manufacturing method of forming a carbonate-containing thermoset includes the steps as follows. The aforementioned curable carbonate composition is provided. A promoter is added into the curable carbonate composition to form a mixture. The mixture is heated to a curing temperature.

Abstract: An audio system may include a microphone configured to sense sound and generate an analog audio signal; an analog-to-digital convertor (ADC) configured to convert the analog audio signal to a digital audio signal having a first bit rate; a motion sensor configured to sense motion associated with the microphone and generate a motion signal representative of the motion associated with the microphone; a motion signal conversion module configured to convert the motion signal to a digital audio noise signal having a second bit rate synchronized with the first bit rate; and a noise suppression module configured to at least partially suppress the digital audio noise signal relative to the digital audio signal to generate a noise-suppressed digital audio signal.

Abstract: A method includes assigning a respective initial credit value to each LUN of a block stripe; performing an erase operation across the block stripe; reducing, in response to the erase operation, each respective initial credit value by a unit increment to provide a respective reduced credit value; refraining from programming to each LUN of the block stripe having a respective reduced credit value equal to zero; and programming to each LUN of the block stripe having a respective reduced credit value greater than zero.

Abstract: An antenna and an electronic device are provided. The antenna includes a phase shifting unit, a reference electrode layer, and an antenna substrate; the phase shifting unit includes at least one phase shifter, each includes a first transmission structure, a second transmission structure, and a phase shifting structure therebetween; the reference electrode layer is provided with at least one and second first openings; the antenna substrate includes a first dielectric substrate, and a feed structure and at least one first radiation portion on a side of the first dielectric substrate away from the reference electrode layer; the feed structure includes at least one first and second feed ports; for each phase shifter, the first transmission structure is electrically connected to a corresponding second feed port through a corresponding first opening; and the second transmission structure is electrically connected to a corresponding first radiation portion through a corresponding second opening.

Abstract: A semiconductor structure includes a substrate, stack structures, first spacers, a contact, and second spacers. The stack structures are located on the substrate and separated from each other. The stack structures include a bit line stack structure and a conductive line stack structure. The first spacers are located on sidewalls of the stack structures. Each of the first spacers includes an oxide layer. The contact is located on the substrate between two adjacent first spacers. The top surface of the oxide layer is not higher than the top surface of the contact. The second spacers are located on the first spacers.

Abstract: A method includes forming an interposer, which includes forming a rigid dielectric layer, and removing portions of the rigid dielectric layer. The method further includes bonding a package component to an interconnect structure, and bonding the interposer to the interconnect structure. A spacer in the interposer has a bottom surface contacting a top surface of the package component, and the spacer includes a feature selected from the group consisting of a metal feature, the rigid dielectric layer, and combinations thereof. A die-saw is performed on the interconnect structure.

Abstract: A semiconductor package structure includes a semiconductor die and at least one pillar structure. The semiconductor die has an upper surface and includes at least one conductive pad disposed adjacent to the upper surface. The pillar structure is electrically connected to the conductive pad of the semiconductor die, and defines a recess portion recessed from a side surface of the pillar structure. A conductivity of the pillar structure is greater than a conductivity of the conductive pad.

Abstract: Disclosed herein are methods, apparatuses and systems related to adjusting operation of memory dies according to reliability measures determined in real-time. The apparatus may be configured to determine the reliability measures based on (1) initiating and completing a programming operation within respective timings following an erase operation and (2) reading the programmed data within a window from completing the programming operation.

Abstract: There is provided a phase shifter having a phase shift region and a peripheral region, and including a first substrate, a second substrate and a dielectric layer between such two substrates; the first substrate includes a first dielectric substrate, a first electrode and a first auxiliary structure; the second substrate includes a second dielectric substrate, a second electrode and a second auxiliary structure; the phase shift region includes overlapping regions; the first electrode and the second electrode are located in the phase shift region, and have orthographic projections, on the first dielectric substrate, overlapped at least partially in the overlapping regions; the first auxiliary structure is in the peripheral region and on a side, close to the dielectric layer, of the first dielectric substrate; the second auxiliary structure is in the peripheral region and on a side, close to the dielectric layer, of the second dielectric substrate.

Abstract: The present disclosure provides a single-channel test device. The single-channel test device includes a metal flange, and a waveguide-coaxial conversion structure and a first square straight waveguide which are disposed along a central axis of the metal flange and disposed on two opposite sides of the metal flange respectively, wherein in the case that a waveguide aperture of one end of the first square straight waveguide distal to the metal flange is placed on and is kept in close contact with a single antenna unit to be tested in a phased reflectarray to be tested, the single-channel test device is configured to test a scattering parameter of the antenna unit to be tested.

Abstract: A semiconductor device package includes a carrier, an emitting element and a first package body. The carrier includes a first surface and a second surface opposite to the first surface. The emitting element is disposed on the first surface of the carrier. The first package body is disposed over the first surface of the carrier and spaced apart from the first surface of the carrier.

Abstract: A method is disclosed to dynamically design acceleration units of neural networks. The method comprises steps of generating plural circuit description files through a neural network model; reading a model weight of the neural network model to determine a model data format of the neural network model; selecting one circuit description file from the plural circuit description files according to the model data format, so that the chip is reconfigured according to the selected circuit description file to form an acceleration unit adapted to the model data format. The acceleration unit is suitable for running a data segmentation algorithm, which may accelerate the inference process of the neural network model. Through this method the chip may be dynamically reconfigured into an efficient acceleration unit for the different model data format, thereby speeding up the inference process of the neural network model.

Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device.

Abstract: Semiconductor devices and method of manufacture are provided. In embodiments a conductive connector is utilized to provide an electrical connection between a substrate and an overlying shield. The conductive connector is placed on the substrate and encapsulated with an encapsulant. Once encapsulated, an opening is formed through the encapsulant to expose a portion of the conductive connector. The shield is deposited through the encapsulant to make an electrical connection to the conductive connector.

Abstract: Provided is a method for tracking a satellite. The method includes: acquiring trajectory information and antenna attitude information of a COTM device; calculating a theoretical pointing angle of an antenna beam for a target satellite based on an orbit parameter of the target satellite and the trajectory information; acquiring an actual pointing angle of the antenna beam by correcting, based on the antenna attitude information, the theoretical pointing angle of the antenna beam; controlling, based on the actual pointing angle of the antenna beam, a receiving phased array antenna to form an antenna beam; acquiring data information of the satellite signal, and correcting an actual pointing angle of the current antenna beam; controlling a transmitting phased array antenna to form an antenna beam based on a corrected actual pointing angle; establishing a communication link and updating ephemeris data of the target satellite.

Abstract: Exemplary methods, apparatuses, and systems include erasing a portion of memory from a garbage pool in response to detecting an idle period. A request to write data to the memory is received and it is determined that a charge gain threshold has not been satisfied for the erased portion of memory. The data is written to the erased portion of memory in response to determining the charge gain threshold has not been satisfied.

Abstract: A processing device identifies a first set of bits associated with a translation unit of a memory device, wherein the first set of bits correspond to a page field; identifies a second set of bits associated with the translation unit, wherein the second set of bits corresponds to a block field; updates a first portion of an address mapping table corresponding to the second set of bits with a value representing a difference between a value stored in the page field and a threshold value; updates a second portion of the address mapping table corresponding to the first set of bits with a value representing a block number; determines, based on the updated first portion and the updated second portion, that a swapping condition is satisfied; and performs a data access operation on a set of memory cells residing at a location corresponding to the translation unit.