Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.

Abstract: Semiconductor devices and method of manufacture are provided. In embodiments a conductive connector is utilized to provide an electrical connection between a substrate and an overlying shield. The conductive connector is placed on the substrate and encapsulated with an encapsulant. Once encapsulated, an opening is formed through the encapsulant to expose a portion of the conductive connector. The shield is deposited through the encapsulant to make an electrical connection to the conductive connector.

Abstract: Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.

Abstract: Some embodiments include a method of forming vertically-stacked memory cells. An opening is formed through a stack of alternating insulative and conductive levels. Cavities are formed to extend into the conductive levels. Regions of the insulative levels remain as ledges which separate adjacent cavities from one another. Material is removed from the ledges to thin the ledges, and then charge-blocking dielectric and charge-storage structures are formed within the cavities. Some embodiments include an integrated structure having a stack of alternating insulative levels and conductive levels. Cavities extend into the conductive levels. Ledges of the insulative levels separate adjacent cavities from one another. The ledges are thinned relative to regions of the insulative levels not encompassed by the ledges. Charge-blocking dielectric and charge-storage structures are within the cavities.

Abstract: A method is disclosed to dynamically design acceleration units of neural networks. The method comprises steps of generating plural circuit description files through a neural network model; reading a model weight of the neural network model to determine a model data format of the neural network model; selecting one circuit description file from the plural circuit description files according to the model data format, so that the chip is reconfigured according to the selected circuit description file to form an acceleration unit adapted to the model data format. The acceleration unit is suitable for running a data segmentation algorithm, which may accelerate the inference process of the neural network model. Through this method the chip may be dynamically reconfigured into an efficient acceleration unit for the different model data format, thereby speeding up the inference process of the neural network model.

Abstract: A system includes a line cache, a memory device, and a processing device operatively coupled to the line cache and the memory device, The processing device includes a buffer manager and a high-speed mode driver, the processing device to perform operations including: detecting that a received event is located in an events list, wherein events stored in the events list are associated with a set of functions that are known to cause a clock domain crossing between the buffer manager and a host system; enabling access to the line cache; and running, using the high-speed mode driver, in a high-speed mode to execute the set of functions out of the line cache on behalf of the host system.

Abstract: A modular head-wearable loudspeaker system includes a headphones module and an earphones module, including a principal earphone. The principal earphone includes an earphone loudspeaker, an audio signal processor, an earphone wireless interface, an earphone audio output, and an earphone microphone input. The headphones module includes two earcups interconnected by a flexible headband and comprising respective headphone loudspeakers, a headphone microphone, a mechanical earphone attachment interface detachably attached to the principal earphone, a headphone audio input communicatively connected to the headphone loudspeakers and detachably communicatively connected to the earphone audio output, and a headphone microphone output communicatively connected to the headphone microphone and detachably communicatively connected to the earphone microphone input.

Abstract: Exemplary methods, apparatuses, and systems include reading logical-to-physical (L2P) table entries from non-volatile memory into volatile memory. Upon detection of a trigger to recover L2P data that was unmerged with the L2P table entries, a copy of an L2P journal is read from non-volatile memory. The L2P journal includes the L2P data that was unmerged with the L2P table entries. One or more of the L2P table entries are updated using the L2P data from the L2P journal.

Abstract: An embodiment a structure including a first semiconductor device bonded to a first side of a first redistribution structure by first conductive connectors, the first semiconductor device comprising a first plurality of passive elements formed on a first substrate, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein, the metallization patterns of the first redistribution structure being electrically coupled to the first plurality of passive elements, a second semiconductor device bonded to a second side of the first redistribution structure by second conductive connectors, the second side of the first redistribution structure being opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on a second substrate, the metallization patterns of the first redistribution structure being electrically coupled to the second plurality of passive elements.

Abstract: Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.

Abstract: An imaging lens including an aperture and a lens with refractive power arranged from a zoom-in side to a zoom-out side along an optical axis is provided. The aperture includes a substrate and a light-shielding layer. The substrate includes a first middle region and a first outer edge region surrounding the first middle region. The first outer edge region allows visible light and infrared light to substantially pass therethrough. The light-shielding layer includes a second middle region and a second outer edge region surrounding the second middle region. The second outer edge region allows infrared light to substantially pass therethrough and substantially shields visible light. A thickness of the aperture is between 0.01 mm and 0.3 mm along a direction of an optical axis. Furthermore, an imaging lens and a manufacturing method of a light-shielding element are also provided.

Abstract: The present disclosure provides an antenna module. The antenna module includes an antenna layer, a ground layer, and an electronic component. The ground layer is disposed over the antenna layer. The electronic component is disposed between the antenna layer and the ground layer.

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes an electronic component, a conductive contact, and a first shielding layer. The electronic component has a first surface, a lateral surface angled with the first surface, and a second surface opposite to the first surface. The conductive contact is connected to the first surface of the electronic component. The first shielding layer is disposed on the lateral surface of the electronic component and a portion of the first surface of the electronic component. The first shielding layer contacts the conductive contact.

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.

Abstract: A semiconductor device package includes an electronic component, an electrical contact and a reinforcement layer. The electronic component has a first conductive layer on a first surface of the electronic component. The electronic component has a through-silicon-via (TSV) penetrating the electronic component and electrically connected to the first conductive layer. The electrical contact is disposed on the first surface of the electronic component and electrically connected to the first conductive layer. The reinforcement layer is disposed on the first surface of the electronic component.

Abstract: The present disclosure provides an antenna module. The antenna module includes a first layer, a second layer, a first antenna, and a second antenna. The first layer has a first dielectric constant. The second layer is adjacent to the first layer. The second layer has a second Dk lower than the first Dk. The first antenna is disposed on the first layer and is configured for operating at a first frequency. The second antenna is disposed on the second layer and is configured for operating at a second frequency higher than the first frequency.

Abstract: A semiconductor package structure and method for manufacturing the same are provided. The semiconductor package structure includes a first electronic component, a conductive pillar, a second electronic component, and a conductive through via. The conductive pillar is disposed on the first electronic component and has a first surface facing away from the first electronic component. The second electronic component is disposed on the first electronic component. The conductive through via extends through the second electronic component and has a first surface facing away from the first electronic component. The first surface of the conductive through via and the first surface of the conductive pillar are substantially coplanar.

Abstract: A semiconductor device package includes a carrier, an emitting device, a first building-up circuit and a first package body. The carrier has a first surface, a second surface opposite to the first surface and a lateral surface extending from the first surface to the second surface. The emitting element is disposed on the first surface of carrier. The first building-up circuit is disposed on the second surface of the carrier. The first package body encapsulates the lateral surface of the carrier.

Abstract: A semiconductor device package includes an emitting device and a first building-up circuit. The emitting device defines a cavity in the emitting device. The first building-up circuit is disposed on the emitting device.

Abstract: A semiconductor device package includes a first circuit layer, a first emitting device and a second emitting device. The first circuit layer has a first surface and a second surface opposite to the first surface. The first emitting device is disposed on the second surface of the first circuit layer. The first emitting device has a first surface facing the first circuit layer and a second surface opposite to the first surface. The first emitting device has a first conductive pattern disposed on the first surface of the first emitting device. The second emitting device is disposed on the second surface of the first emitting device. The second emitting device has a first surface facing the second surface of the first emitting device and a second surface opposite to the first surface. The second emitting device has a second conductive pattern disposed on the second surface of the emitting device.