Abstract: Preparation method for a thin film transistor, preparation method for an array substrate, an array substrate, and a display apparatus are provided. The preparation method for a thin film transistor includes: forming, on a pattern of a semiconductor layer, a first photoresist pattern including a photoresist with two different thicknesses, and performing a heavily-doped ion implantation process on the pattern of the semiconductor layer by using the first photoresist pattern as a barrier mask; ashing the first photoresist pattern to remove the photoresist with a second thickness and to thin the photoresist with a first thickness, so as to form a second photoresist pattern; and performing a lightly-doped ion implantation process on the pattern of the semiconductor layer by using the second photoresist pattern as a barrier mask.

Abstract: The present disclosure discloses a method forming a semiconductor light-emitting unit, comprising the steps of providing a semiconductor substrate; epitaxially growing a reaction layer on the semiconductor substrate; and epitaxially growing a buffer layer on the reaction layer; wherein the buffer layer and the semiconductor substrate are lattice-mismatched, and a dislocation density of the buffer layer is smaller than smaller than 1*109 cm?2.

Abstract: Disclosed is a conveying and positioning system and method, which is applied in the technical field of conveyance in the automotive industry and comprises a roller machine, a conveying trolley and an intelligent variable-frequency controller, wherein the conveying trolley is provided with a reflector; the roller machine is provided with a driving mechanism and a distance sensor; and, the driving mechanism comprises a driving motor controlled by the intelligent variable-frequency controller and a rotary encoder capable of feeding back rotation speed information of the driving motor to the intelligent variable-frequency controller.

Abstract: A single-mode optical fiber having an automatic control heat source specifically produced for hydraulic seepage measurement, sequentially includes a single-core optical fiber, an inner protective elastic layer, a heat insulation steel ring, an inner-layer filling protection ring, an elastic hard ring, and an anti-seepage heat insulation hard sleeve ring arranged from inside to outside.

Abstract: The present invention is directed to pyrimidinone amide compounds which may be useful as therapeutic agents for the treatment of central nervous system and/or peripheral disorders associated with phosphodiesterase 2 (PDE2). The present invention also relates to the use of such compounds for treating neurological and psychiatric disorders, such as schizophrenia, psychosis, Alzheimer's, cognitive impairment, anxiety, depression, migraines, or Huntington's disease, Parkinson's disease, Parkinson's disease dementia (PDD), and other diseases associated with striatal hypofunction or basal ganglia dysfunction.

Abstract: A distributed optical fiber identification system and method for seepage conditions of a hydraulic structure and a base thereof including a single-mode optical fiber having an automatic control heat source produced for seepage measurement, an optical path coupler and a synchronous controller, the synchronous controller is connected to a mode locked laser, a polarization beam splitter, an isolator, a grating pair, a diffraction grating, a reflector, a beam splitter, a nonlinear crystal, a spectrometer and a Michelson interferometer, the output end of the Michelson interferometer is connected to the optical path coupler, the output end of the optical path coupler is connected to a detector and a second optical splitter respectively, the detector is connected to a digital signal processor, the second optical splitter is connected to the digital signal processor through an amplifying circuit, and the digital signal processor is connected to the synchronous controller and a collector respectively.

Abstract: The present application discloses a method of fabricating a thin film transistor, including forming a semiconductor layer having a pattern corresponding to that of the active layer on a base substrate; forming a first photoresist layer on a side of the semiconductor layer distal to the base substrate; the first photoresist layer being in an area corresponding to the channel region, the second doped region, and the fourth doped region; doping a region of the semiconductor layer corresponding to the first doped region and the third doped region using the first photoresist layer as a mask plate; forming a second photoresist layer by removing a portion of the first photoresist layer to expose an initial portion of the semiconductor layer corresponding to at least a portion of the second doped region and at least a portion of the fourth doped region; and doping the initial portion of the semiconductor layer using the second photoresist layer as a mask plate.

Abstract: A single-mode optical fiber having an automatic control heat source specifically produced for hydraulic seepage measurement, sequentially includes a single-core optical fiber, an inner protective elastic layer, a heat insulation steel ring, an inner-layer filling protection ring, an elastic hard ring, and an anti-seepage heat insulation hard sleeve ring arranged from inside to outside.

Abstract: A heat source-free fiber positioning and orienting system for seepage of submerged or partially submerged structures and monitoring method thereof includes a plurality of seepage monitoring devices connected through rotary supports. The seepage monitoring devices include first seepage monitoring units symmetrically distributed on the front and back and second seepage monitoring units symmetrically distributed on left and right. Seepage monitoring fibers are distributed in the first seepage monitoring units and the second seepage monitoring units, and the seepage conditions of the submerged or partially submerged structures are monitored through the seepage monitoring fibers. The heat source-free fiber positioning and orienting system for the seepage of submerged or partially submerged structures has the characteristics of no heating, distribution manner, multiple orientations and synchronicity or the like.

Abstract: A hydraulic structure seepage property distributed optical fiber sensing integrated system includes a special optical fiber for seepage measurement, an optical fiber calibration device, an optical fiber laying device, and a seepage property identification device. After the optical fiber calibration device calibrates the special optical fiber for seepage measurement on site, the special optical fiber for seepage measurement is laid and tested with the aid of the optical fiber laying device, and is connected to the seepage property identification device for information collection, processing and analysis after the test is successful.

Abstract: A wading structure health sensing distributed optical fiber calibration system and a method includes a heat insulation barrel, and calibration modules located in the inner ring of the barrel, the calibration module comprises a through-shaft, a first electronic thermometer and a second electronic thermometer, an optical cable to be calibrated is twisted on the through-shaft and is connected to an optical fiber temperature demodulator outside the heat insulation barrel, the first and second electronic thermometers are respectively connected to first and second temperature control meters outside the barrel, a temperature source wire for heating water in the barrel arranged in the wall of the barrel, the temperature source wire connected to a power temperature control meter outside the barrel, and the first temperature control meter connected to cooling and heating devices simultaneously through leads of the first temperature control meter.

Abstract: Some embodiments of the present disclosure provide a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes a chamber, a support and a liner. The chamber is configured for plasma processes and includes a chamber wall. The support is configured to hold a wafer in the chamber. The liner is configured to surround the support and includes a top side and a bottom side. The top side is detachably hung on the chamber wall. The bottom side includes gas passages for plasma particles to pass through the liner.

Abstract: Disclosed is a friction conveying system, comprising a friction driving unit, a clamping unit and a friction driving component, wherein the friction driving unit comprises a rotation driving component, a first connecting rod, a second connecting rod, at least one first rollers arranged on the first connecting rod, and at least one second rollers arranged on the second connecting rod, the clamping unit comprises a clamping driving component by which the first connecting rod and the second connecting rod are moved towards each other to cause the first rollers and the second rollers to clamp the friction driving component, the first rollers and/or the second rollers are drivable by the rotation driving component to rotate, causing the friction driving component clamped between the first rollers and the second rollers to move by means of frictional force.

Abstract: The present invention is directed to pyrimidine carboxamide compounds of formula I which are useful as therapeutic agents for the treatment of central nervous system disorders associated with phosphodiesterase 2 (PDE2). The present invention also relates to the use of such compounds for treating neurological and psychiatric disorders, such as schizophrenia, psychosis, Parkinson's disease, Parkinson's disease dementia (PDD), or Huntington's disease, and those associated with striatal hypofunction or basal ganglia dysfunction.

Abstract: The present invention provides a compound of Formula I and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XIa inhibitors or dual inhibitors of Factor XIa and plasma kallikrein.

Abstract: Some embodiments of the present disclosure provide a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes a chamber, a support and a liner. The chamber is configured for plasma processes and includes a chamber wall. The support is configured to hold a wafer in the chamber. The liner is configured to surround the support and includes a top side and a bottom side. The top side is detachably hung on the chamber wait. The bottom side includes gas passages for plasma particles to pass through the liner.

Abstract: In illustrative implementations of this invention, a lensometer includes a small aperture camera for capturing an image of light that travels from a display surface, through a subject lens and to the camera. One or more computers are programmed to perform calculations that take the image as an input and that compute, for each respective region in a set of regions of the subject lens, a refractive attribute of the respective region.

Abstract: The present invention provides a compound of Formula I and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing unstable angina, refractory angina, myocardial infarction, transient ischemic attacks, atrial fibrillation, thrombotic stroke, embolic stroke, deep vein thrombosis, disseminated intravascular coagulation, ocular build up of fibrin, and reocclusion or restenosis of recanalized vessels. The compounds are selective Factor IXa inhibitors.

Abstract: In one example, a graphic computing device may apply a clipping technique to accurately and efficiently render a graphic data set. A central processing unit may generate a convex polygonal clip from a two-dimensional polygon. The central processing unit may calculate a clipping plane for a convex polygonal clip based on an edge of the convex polygonal clip. A graphics processor may apply the convex polygonal clip in a pixel shader.

Abstract: A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.