Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing aluminum and a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The light-emitting structure emits an incoherent light. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material which includes indium (In). The well layer has a first In content percentage larger than 0.53, and the barrier layer has a second In content percentage less than 0.53.

Abstract: A method for generating a digital identity is provided, including: extracting a first preset number of short tandem repeat STRs and relevant information of each STR from whole genome data; generating a single STR digital code corresponding to each STR according to the relevant information of each STR, to obtain a plurality of single STR digital codes; performing sequence transformation on each single STR digital code with a preset rule, and generating a target STR digital code according to the single STR digital code after the sequence transformation; generating summary information of the target STR digital code, and determining the summary information as summary information of the STR to which the target STR digital code belongs; and determining the summary information of the STR as the generated digital identity.

Abstract: A conveying system, comprising: a conveying carrier (3) that is provided with a first connection structure (31); a rolling bed (1) that comprises a rolling bed base (11) and a plurality of rolling components (12), wherein the rolling components (12) are connected to the rolling bed base (11); a driving mechanism comprising a second connection structure (26) and a driving assembly, wherein the driving assembly can drive the second connection structure (26) to reciprocate between a first position and a second position along a conveying direction, the second connection structure (26) at the first position is connected to the first connection structure (31), and the second connection structure (26) at the second position is separated from the first connection structure (31); and a positioning mechanism (4) comprising an X-direction positioning assembly, a Y-direction positioning assembly, and a Z-direction positioning assembly, wherein the Z-direction positioning assembly lifts the conveying carrier (3), so that

Abstract: Provided a bolt-bearing circumferential device for reinforcing and correcting an angle iron of a transmission tower, comprising a reinforcing angle iron, a holding hoop, and a connector; the reinforcing angle iron is arranged at an inner side of two limbs of an angle iron to be reinforced, an axis direction of the reinforcing angle iron is parallel to the angle iron to be reinforced, and an outer wall of two limbs of the reinforcing angle iron are fitted with an inner wall of the angle iron to be reinforced; the holding hoop is arranged at an outer side of the reinforcing angle iron and the angle iron to be reinforced, and each part of the holding hoop are connected together through the high-strength bolts; a side wall of the holding hoop is provided with three groups of threaded holes, wherein an axis of a first group of the threaded holes and an axis of a second group of the threaded holes are perpendicular to each other, a first group of bolts pass through the first group of the threaded holes to apply a r

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

Abstract: A solid-state light emitter power supply includes a first rectifier circuit, a second rectifier circuit, a power factor correction (PFC) stage, a first flyback converter, a second flyback converter, and a microcontroller. The rectifier circuits are configured to receive phase-cut signals from respective dimmer circuits as inputs and output respective phase-cut rectified power signals. The PFC stage is configured to receive a sum of the phase-cut rectified power signals as input and output a power-factor corrected electrical power to the flyback converters. The flyback converters are connected in parallel and are configured to power respective loads including a respective solid-state light emitter. The microcontroller is configured to receive signals derived from the phase-cut signals as inputs and to output respective pulse-width modulation (PWM) control signals to each of the flyback converters.

Abstract: Provided a bolt-bearing circumferential device for reinforcing and correcting an angle iron of a transmission tower, comprising a reinforcing angle iron, a holding hoop, and a connector; the reinforcing angle iron is arranged at an inner side of two limbs of an angle iron to be reinforced, an axis direction of the reinforcing angle iron is parallel to the angle iron to be reinforced, and an outer wall of two limbs of the reinforcing angle iron are fitted with an inner wall of the angle iron to be reinforced; the holding hoop is arranged at an outer side of the reinforcing angle iron and the angle iron to be reinforced, and each part of the holding hoop are connected together through the high-strength bolts; a side wall of the holding hoop is provided with three groups of threaded holes, wherein an axis of a first group of the threaded holes and an axis of a second group of the threaded holes are perpendicular to each other, a first group of bolts pass through the first group of the threaded holes to apply a r

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: The present application provides a full hydraulic synchronous steering system for a low-speed heavy-load vehicle, where the system includes: a steering control mechanism and a steering actuator; by determining a desired steering curve between a steering wheel angle and a rear wheel angle, when a steering error exceeds an allowable error, a controller controls the opening and closing of an oil replenishment solenoid valve (5) and an oil discharge solenoid valve (4) to adjust a flow rate of the oil flowing into a steering cylinder (7), so as to ensure that the steering error is within an allowable error range, thereby implementing synchronous steering. A method for manipulating the full hydraulic synchronous steering system is further provided. The full hydraulic synchronous steering system and the method can improve synchronous steering capability of the low-speed heavy-load vehicle and change a steering ratio, thereby improving safety and direction feeling of a driver.

Abstract: The present disclosure relates to a glass fiber sizing agent for a daylighting panel. The sizing agent includes effective components and water. The sizing agent has a solid content of 2-8%. Percentage of solid mass of each of the effective components in a solid mass of the sizing agent is as follows: a silane coupling agent: 3-15%; a film-forming agent: 68-93%; a lubricant: 0.5-10%; an antistatic agent: 1-12%; and a pH regulator: 0-5%. The present disclosure further relates to a preparation method of the glass fiber sizing agent for a daylighting panel and use of the sizing agent in fields of glass fibers and composite materials. Compared with the prior art, glass fiber products produced from the sizing agent of the present disclosure have a suitable stiffness and wet-out speed, and the sizing agent has an excellent refractive index, which is similar to that of matrix resin.

Abstract: The disclosure provides an optical imaging lens, which sequentially includes, from an object side to an image side: a first lens with positive focal power; a second lens with negative focal power; a third lens with positive focal power; a fourth lens with focal power; a fifth lens with focal power; a sixth lens with focal power, an object-side surface of which is a convex surface and an image-side surface of which is a concave surface; and a seventh lens with negative focal power, an image-side surface of which is a concave surface. An Entrance Pupil Diameter (EPD) of the optical imaging lens and an effective focal length f of the optical imaging lens meet 1.4<f/EPD<1.98, an air space T23 between the second lens and the third lens on an optical axis and an air space T34 between the third lens and the fourth lens on the optical axis meet 0.1<T23/T34<0.3.

Abstract: An imaging lenses and an imaging device are provided, the imaging lenses includes a first imaging lens, a second imaging lens and a third imaging lens which are arranged at intervals in sequence, wherein the first imaging lens, the second imaging lens and the third imaging lens satisfy 1.0<Fno1<Fno2<Fno3<3.0; 5.0 mm>F1>F2>F3>1.0 mm; P1<P2<P3; wherein Fno1 is an aperture number of the first imaging lens, Fno2 is an aperture number of the second imaging lens, Fno2 is an aperture number of the third imaging lens, F1 is an effective focal length of the first imaging lens, F2 is an effective focal length of the second imaging lens, F3 is an effective focal length of the third imaging lens. The disclosure solves the problem in the related art that a resolution of light of 3D structure the imaging device is low in a distant scene.

Abstract: A system is disclosed for generating a graphical user interface (GUI) for network management automation. The GUI is a data view that provides functionality for monitoring and controlling devices in a network using a drilldown menu.

Abstract: Disclosed are an infrared touch screen bezel for installing a functional assembly and a display terminal including the same. The infrared touch screen bezel (10) includes a frame body (11), a first infrared base panel (12), and a second infrared base panel (13); the first infrared base panel (12) and the second infrared base panel (13) are both arranged in a cavity (101) of the frame body (11), and a functional assembly (30) is arranged in a gap between the first infrared base panel (12) and the second infrared base panel (13); the first infrared base panel (12) and the second infrared base panel (13) are electrically connected through a first flexible circuit board (14). The above-mentioned infrared touch screen bezel (10) may greatly reduce the width of the frame required to install a functional assembly without affecting the infrared touch function.

Abstract: A system is disclosed for generating a graphical user interface (GUI) for network management automation. The GUI is a data view that provides functionality for monitoring and controlling devices in a network using dynamic dataview templates.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing aluminum and a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The light-emitting structure emits an incoherent light. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material which includes indium (In). The well layer has a first In content percentage larger than 0.53, and the barrier layer has a second In content percentage less than 0.53.

Abstract: The present application relates to compounds according to Formula (I), pharmaceutical compositions comprising at least one of said compounds, their use as a medicament, and their use in treating chronic hepatitis B virus (HBV) infection. The disclosure further pertains to methods for preparing compounds according to Formula (I).

Abstract: A method for slope geological disaster treatment and mineral resource recovery includes the following steps: S1: dividing a mountain top into a plurality of treatment sections and treatment segments; S2, selecting an easy-to-slide area at the upper portion of a first treatment segment and blasting an easy-to-slide body to make the easy-to-slide body roll down to a bottom of the slope; S3, forming a regular initial slope bench; S4, mining coal at the coal seam in a grouped mining adit manner, and laying grouting pipelines in the primary mining adits; S5, forming closed mining adits; S6, excavating secondary mining adits at intervals of the primary mining adits in sequence; S7, continuing mining in an adjacent second treatment segment in the same manner; and S8, continuing mining the first treatment segment of the second treatment section in the same manner.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a multiple quantum well structure. The multiple quantum well structure contains aluminum and includes a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. In each semiconductor stack, the well layer has a thickness larger than a thickness of the barrier layer.

Abstract: A cabazitaxel weakly-alkaline derivative, preparation, and synthesis thereof, a liposome preparation containing the cabazitaxel weakly-alkaline derivative and application of the cabazitaxel weakly-alkaline derivative in a drug delivery system are provided. Cabazitaxel is connected with a weakly-alkaline intermediate through an ester bond, the ester bond can be broken under the action of esterase in vivo, and an active drug is released. A connecting group is C1-C4 alkyl, C3-C6 naphthenic base or phenyl; [N] is an N-methyl piperazinyl group, a piperidinyl group, a 4-(1-piperidinyl) piperidinyl group, a morpholinyl group, a pyrrolidine group or other tertiary amine structures. The cabazitaxel weakly-alkaline derivative can be prepared into the liposome preparation having high drug loading capacity, high encapsulation efficiency, and good stability.