Abstract: A cabazitaxel weakly-alkaline derivative, preparation, and synthesis thereof, a liposome preparation containing the cabazitaxel weakly-alkaline derivative and application of the cabazitaxel weakly-alkaline derivative in a drug delivery system are provided. Cabazitaxel is connected with a weakly-alkaline intermediate through an ester bond, the ester bond can be broken under the action of esterase in vivo, and an active drug is released. A connecting group is C1-C4 alkyl, C3-C6 naphthenic base or phenyl; [N] is an N-methyl piperazinyl group, a piperidinyl group, a 4-(1-piperidinyl) piperidinyl group, a morpholinyl group, a pyrrolidine group or other tertiary amine structures. The cabazitaxel weakly-alkaline derivative can be prepared into the liposome preparation having high drug loading capacity, high encapsulation efficiency, and good stability.

Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

Abstract: A solid-state light emitter power supply includes a first rectifier circuit, a second rectifier circuit, a power factor correction (PFC) stage, a first flyback converter, a second flyback converter, and a microcontroller. The rectifier circuits are configured to receive phase-cut signals from respective dimmer circuits as inputs and output respective phase-cut rectified power signals. The PFC stage is configured to receive a sum of the phase-cut rectified power signals as input and output a power-factor corrected electrical power to the flyback converters. The flyback converters are connected in parallel and are configured to power respective loads including a respective solid-state light emitter. The microcontroller is configured to receive signals derived from the phase-cut signals as inputs and to output respective pulse-width modulation (PWM) control signals to each of the flyback converters.

Abstract: Light systems and light fixtures are described herein. In one embodiment, a light system may include a light fixture, a first diffuser attached to the light fixture, where the first diffuser and the light fixture define a cavity, a first LED producing ambient light within the cavity, and a second LED producing directional light in the cavity, where the first diffuser is adapted or configured to receive the ambient light and the directional light and emit the ambient light and the directional light external to the light system. In another embodiment, a light fixture may include a first LED subsystem including a first LED and a diffuser, the first LED subsystem adapted or configured to produce ambient light, a second LED subsystem including a second LED and a reflector, the second LED subsystem adapted or configured to produce directional light, where the directional light passes through the diffuser.

Abstract: A water heater includes an outer casing defining a longitudinal axis, an axial direction being defined as extending along the longitudinal axis. The water heater further includes a combustor for production of hot flue gases, a primary heat exchanger including a tube positioned within the outer casing, and a secondary heat exchanger including a plurality of plates coupled together by brazing to form a brazed plate heat exchanger. The secondary heat exchanger includes a first set of passages defined between the plates, and a second set of passages defined between the plates and alternating with the first set of passages in the axial direction. The primary and secondary heat exchangers are in fluid communication such that the flue gases flow through the second set of passages before being exhausted, and water to be heated flows through the first set of passages to a delivery point for use upon demand.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: The present invention provides a compound of Formula (I) and pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective Factor XI activation inhibitors.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A light fixture for waveguided ambient light is described herein. In one embodiment, the light fixture includes an LED light source for emitting light rays, a waveguide optically coupled to the LED light source to receive and guide the emitted light rays from a proximal end of the waveguide to a distal end of the waveguide, a first indirect lighting surface configured to receive a first portion of the emitted light rays and reflect the first portion at a first distribution to produce a first ambient light source, and a second indirect lighting surface configured to receive a second portion of the emitted light rays and reflect the second portion at a second distribution to produce a second ambient light source.

Abstract: A system for disinfecting an enclosed space includes an ultraviolet (UV) disinfection assembly, a sensor to detect occupancy in or entry into the enclosed space, and a controller. The UV disinfection assembly includes UV emitters. The controller controls operation of the UV emitters to carry out disinfection operations, each of a predetermined UV dose. The controller activates a disinfection operation in a first mode when: (1A) the sensor indicates no occupancy in or no entry into the enclosed space. The controller activates a disinfection operation in a second mode when: (2A) the sensor indicates no occupancy in or no entry into the enclosed space, and (2B) there is a qualified human input through a human-machine interface (HMI) in communication with the controller. The controller suspends or deactivates the disinfection operation when the sensor indicates occupancy in or entry into the enclosed space.

Abstract: A system for disinfecting an enclosed space includes a housing, ultraviolet (UV) emitters, a sensor to detect occupancy in or entry into an enclosed space, a UV directing mechanism, and a controller. The housing includes an air flow passageway. When the UV directing mechanism is in the closed state, the UV emitters are positioned in the air flow passageway and transmission of UV electromagnetic radiation into the enclosed space is substantially blocked. UV electromagnetic radiation is transmitted into the enclosed space when the UV directing mechanism is in the at least one open state. Disinfection operations can be activated when the UV directing mechanism is in the open state or the closed state. When the UV directing mechanism is in the open state, the disinfection operation is activated when the sensor indicates no occupancy in or no entry into the enclosed space.

Abstract: The disclosure discloses an optical imaging lens assembly, which sequentially includes, from an object side to an image side along an optical axis, a first lens with a positive refractive power, a second lens with a positive refractive power, a third lens with a negative refractive power, a fourth lens, a fifth lens, a sixth lens, a seventh lens, an eighth lens, a ninth lens with a positive refractive power, and a tenth lens with a negative refractive power, wherein a spacing distance TTL from an object-side surface of the first lens to an imaging surface of the optical imaging lens assembly on the optical axis and an Entrance Pupil Diameter (EPD) of the optical imaging lens assembly meet TTL/EPD<2.0.

Abstract: The disclosure provide an optical imaging lens assembly, which sequentially includes from an object side to an image side along an optical axis: a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, an eighth lens, a ninth lens and a tenth lens having refractive powers respectively; wherein the first lens, the third lens and the ninth lens have positive refractive powers respectively; the second lens and the tenth lens have negative refractive powers respectively; and f is a total effective focal length of the optical imaging lens assembly, and EPD is an entrance pupil diameter of the optical imaging lens assembly, f and EPD satisfy: f/EPD<1.5.

Abstract: The disclosure provides an optical imaging lens assembly, which sequentially includes from an object side to an image side along an optical axis: a first lens with a positive refractive power; a second lens with a refractive power; a third lens with a refractive power; a fourth lens with a refractive power; a fifth lens with a positive refractive power; a sixth lens with a negative refractive power; a seventh lens with a refractive power; an eighth lens with a positive refractive power; a ninth lens with a refractive power; and a tenth lens with a negative refractive power; wherein an effective focal length f of the optical imaging lens assembly and a maximum field of view FOV of the optical imaging lens assembly satisfy f×tan(½FOV)>6.0 mm.

Abstract: The present disclosure discloses a method and apparatus for filtering glints. The method includes that: a first image and a reference image matched with the first image are acquired, and first-type glints are displayed in the first image; second-type glints in the first image are determined according to the reference image, and the second-type glints are glints obtained by estimating glints in the first image on the basis of the reference image; a matching result of the first-type glints and the second-type glints is determined according to first positions of the first-type glints and second positions of the second-type glints; and the first-type glints are filtered according to the matching result.

Abstract: Disclosed are an infrared touch screen bezel for installing a functional assembly and a display terminal including the same. The infrared touch screen bezel (10) includes a frame body (11), a first infrared base panel (12), and a second infrared base panel (13); the first infrared base panel (12) and the second infrared base panel (13) are both arranged in a cavity (101) of the frame body (11), and a functional assembly (30) is arranged in a gap between the first infrared base panel (12) and the second infrared base panel (13); the first infrared base panel (12) and the second infrared base panel (13) are electrically connected through a first flexible circuit board (14). The above-mentioned infrared touch screen bezel (10) may greatly reduce the width of the frame required to install a functional assembly without affecting the infrared touch function.

Abstract: A pixel structure and a manufacturing method thereof, an array substrate and a display device are provided. The pixel structure includes: a signal line; a common electrode line an extension direction of which is same as an extension direction of the signal line; a transistor including a semiconductor layer which includes a source region and a drain region; a first storage electrode which is insulated from the common electrode line and is connected with the drain region of the semiconductor layer; and a second storage electrode which is connected with the common electrode line and is insulated from the first storage electrode. In the pixel structure, portions, between the signal line and the common electrode line, of the first storage electrode and the second storage electrode includes overlap with each other to form a first storage capacitance.

Abstract: A semiconductor device includes a first type semiconductor structure, an active structure, and a contact layer. The first type semiconductor structure includes a first lattice constant, a first side and a second side opposite to the first side. The active structure is on the first side of the first type semiconductor structure and emits a radiation, and the radiation has a peak wavelength between 1000 nm and 2000 nm. The contact layer is on the second side of the first type semiconductor structure and includes a second lattice constant. A difference between the first lattice constant and the second lattice constant is at least 0.5%.