Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Abstract: Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Abstract: Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

Abstract: Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Abstract: Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Abstract: The present invention provides a method for manufacturing a graphene film and a graphene channel of transistor. The graphene film is prepared at a low temperature by using molecular beam epitaxy technique, and the graphene channel is able to fit into a transistor. The excellent characteristic of current modulation within graphene transistors is observed.

Abstract: The present invention provides a method for manufacturing a graphene film and a graphene channel of transistor. The graphene film is prepared at a low temperature by using molecular beam epitaxy technique, and the graphene channel is able to fit into a transistor. The excellent characteristic of current modulation within graphene transistors is observed.

Abstract: The present invention discloses a process for forming a carbon film or an inorganic material film on a substrate by physical vapor deposition (PVD). Through the process, a high-quality, wafer scale thin film, such as a graphene film, is directly formed on a substrate without using an additional transfer step.

Abstract: An apparatus for measuring surface tension includes: a U-shaped communicating tube having a base section that defines a horizontal line, and first and second sections that extend from the base section, and that respectively have first and second top open ends distal from the base section; and a capillary connected to the second top open, and having a top open end. The U-shaped communicating tube has a diameter greater than that of the capillary such that the U-shaped communicating tube does not exhibit capillary property when a liquid is filled therein. The first top open end has a height relative to the horizontal line that is greater than that of the top open end of the capillary such that the height difference therebetween is greater than that between the liquid level at the first section and a liquid drop formed on the top open end of the capillary.

Abstract: An apparatus for measuring surface tension includes: a U-shaped communicating tube having a base section that defines a horizontal line, and first and second sections that extend from the base section, and that respectively have first and second top open ends distal from the base section; and a capillary connected to the second top open, and having a top open end. The U-shaped communicating tube has a diameter greater than that of the capillary such that the U-shaped communicating tube does not exhibit capillary property when a liquid is filled therein. The first top open end has a height relative to the horizontal line that is greater than that of the top open end of the capillary such that the height difference therebetween is greater than that between the liquid level at the first section and a liquid drop formed on the top open end of the capillary.