Patents by Inventor Meoung-Whan Cho
Meoung-Whan Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20140284770Abstract: The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure.Type: ApplicationFiled: September 28, 2011Publication date: September 25, 2014Applicants: DOWA ELECTRONICS MATERIALS CO., LTD., BBSA LIMITEDInventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki
-
Publication number: 20140217457Abstract: There is provided a light-emitting element chip which can be safely assembled and a manufacturing method therefor. A light-emitting element chip 10 has a semiconductor layer 12 including a luminescent layer 12a on a supporting portion 11. The supporting portion 11 has a concave shape, providing a support substrate in this light-emitting element chip 10, and being connected to one electrode on the semiconductor layer 12. The outer peripheral portion of the supporting portion 11 (a supporting portion outer peripheral portion 11a) surrounds the semiconductor layer 12, and is protruded to be set at a level higher than the other face 12d and the n-side electrode 15 of the semiconductor layer 12.Type: ApplicationFiled: May 25, 2011Publication date: August 7, 2014Applicants: WAVESQUARE INC., DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Yoshitaka Kadowaki
-
Publication number: 20140015105Abstract: The purpose of the present invention is to provide a good ohmic contact for an n-type Group-III nitride semiconductor. An n-type GaN layer and a p-type GaN layer are aequentially formed on a lift-off layer (growth step). A p-side electrode is formed on the top face of the p-type GaN layer. A copper block is formed over the entire area of the top face through a cap metal. Then, the lift-off layer is removed by making a chemical treatment (lift-off step). Then, a laminate structure constituted by the n-type GaN layer, with which the surface of the N polar plane has been exposed, and the p-type GaN layer is subjected to anisotropic wet etching (surface etching step). The N-polar surface after the etching has irregularities constituted by {10-1-1} planes. Then, an n-side electrode is formed on the bottom face of the n-type GaN layer (electrode formation step).Type: ApplicationFiled: December 28, 2010Publication date: January 16, 2014Applicants: WAVESQUARE INC., DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Ryuichi Toba, Yoshitaka Kadowaki, Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang
-
VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME
Publication number: 20140001511Abstract: A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon (“n” is a positive integer) having rounded corners.Type: ApplicationFiled: September 4, 2013Publication date: January 2, 2014Applicants: DOWA ELECTRONICS MATERIALS CO., LTD., WAVESQUARE INC.Inventors: Meoung Whan CHO, Seog Woo LEE, Pil Guk JANG, Ryuichi TOBA, Tatsunori TOYOTA, Yoshitaka KADOWAKI -
VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME
Publication number: 20120248458Abstract: A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon en” is a positive integer) having rounded corners.Type: ApplicationFiled: November 5, 2009Publication date: October 4, 2012Applicants: DOWA ELECTRONICS MATERIALS CO., LTD., WAVESQUARE INC.Inventors: Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Tatsunori Toyota, Yoshitaka Kadowaki -
Patent number: 8216869Abstract: A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 ?m nor more than 10 ?m on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer.Type: GrantFiled: August 27, 2008Date of Patent: July 10, 2012Assignee: Dowa Electronics Material Co., Ltd.Inventors: Takafumi Yao, Meoung-Whan Cho, Ryuichi Toba
-
Patent number: 8124504Abstract: A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.Type: GrantFiled: January 21, 2010Date of Patent: February 28, 2012Assignees: Tohoku Techno Arch Co., Ltd., Furukawa Co., Ltd., Mitsubishi Chemical Corporation, Wavesquare Inc., Dowa Holdings Co., Ltd., Epivalley Co. Ltd.Inventors: Takafumi Yao, Meoung-Whan Cho
-
Patent number: 8119499Abstract: A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer.Type: GrantFiled: August 24, 2006Date of Patent: February 21, 2012Assignees: Tohoku Techno Arch Co., Ltd., Furukawa Co., Ltd., Mitsubishi Chemical Corporation, Dowa Holdings Co., Ltd., Epivalley Co., Ltd., Wavesquare Inc.Inventors: Takafumi Yao, Meoung-Whan Cho
-
Patent number: 7906409Abstract: A device manufacturing method includes a buffer layer forming step of forming a buffer layer on an underlying substrate, a mask pattern forming step of forming, on the buffer layer, a mask pattern which partially covers the buffer layer, a growth step of growing a group III nitride crystal from regions exposed by the mask pattern on the surface of the buffer layer, thereby forming a structure in which a plurality of crystal members are arranged with gaps therebetween so as to partially cover the buffer layer and the mask pattern, a channel forming step of forming a channel, to supply a second etchant for the buffer layer to the buffer layer, by selectively etching the mask pattern using a first etchant for the mask pattern, and a separation step of separating the plurality of crystal members from the underlying substrate and separating the plurality of crystal members from each other by supplying the second etchant to the buffer layer through the gaps and the channel and selectively etching the buffer layer.Type: GrantFiled: March 17, 2009Date of Patent: March 15, 2011Assignee: Canon Kabushiki KaishaInventors: Takafumi Yao, Meoung-Whan Cho
-
Patent number: 7829435Abstract: A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.Type: GrantFiled: August 21, 2009Date of Patent: November 9, 2010Assignees: Tohoku Techno Arch Co., Ltd., Furukawa Co., Ltd., Mitsubishi Chemical Corporation, Dowa Holdings Co., Ltd., Epivalley Co., Ltd., Wavesquare Inc.Inventors: Takafumi Yao, Meoung-Whan Cho
-
Patent number: 7829207Abstract: A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.Type: GrantFiled: September 27, 2008Date of Patent: November 9, 2010Assignees: Stanley Electric Co., Ltd., Tokyo Denpa Co., Ltd., Tohoku UniversityInventors: Hiroyuki Kato, Michihiro Sano, Katsumi Maeda, Hiroshi Yoneyama, Takafumi Yao, Meoung Whan Cho
-
Publication number: 20100120234Abstract: A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.Type: ApplicationFiled: January 21, 2010Publication date: May 13, 2010Inventors: Takafumi Yao, Meoung-Whan Cho
-
Publication number: 20100009516Abstract: A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.Type: ApplicationFiled: August 21, 2009Publication date: January 14, 2010Inventors: Takafumi Yao, Meoung-Whan Cho
-
Publication number: 20090239356Abstract: A device manufacturing method includes a buffer layer forming step of forming a buffer layer on an underlying substrate, a mask pattern forming step of forming, on the buffer layer, a mask pattern which partially covers the buffer layer, a growth step of growing a group III nitride crystal from regions exposed by the mask pattern on the surface of the buffer layer, thereby forming a structure in which a plurality of crystal members are arranged with gaps therebetween so as to partially cover the buffer layer and the mask pattern, a channel forming step of forming a channel, to supply a second etchant for the buffer layer to the buffer layer, by selectively etching the mask pattern using a first etchant for the mask pattern, and a separation step of separating the plurality of crystal members from the underlying substrate and separating the plurality of crystal members from each other by supplying the second etchant to the buffer layer through the gaps and the channel and selectively etching the buffer layer.Type: ApplicationFiled: March 17, 2009Publication date: September 24, 2009Inventors: Takafumi Yao, Meoung-Whan Cho
-
Publication number: 20090057835Abstract: A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 ?m nor more than 10 ?m on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer.Type: ApplicationFiled: August 27, 2008Publication date: March 5, 2009Applicants: Tohoku Techno Arch Co., Ltd., Dowa Electronics Materials Co., Ltd.Inventors: Takafumi Yao, Meoung-Whan Cho, Ryuichi Toba
-
Patent number: D703862Type: GrantFiled: March 27, 2013Date of Patent: April 29, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki
-
Patent number: D703863Type: GrantFiled: March 27, 2013Date of Patent: April 29, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki
-
Patent number: D711581Type: GrantFiled: March 26, 2012Date of Patent: August 19, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki
-
Patent number: D711582Type: GrantFiled: March 26, 2012Date of Patent: August 19, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki
-
Patent number: D711583Type: GrantFiled: March 26, 2012Date of Patent: August 19, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki