Abstract: Porous polymeric networks and composite materials comprising metal nanoparticles distributed in the polymeric networks are provided. Also provided are methods for using the polymeric networks and the composite materials in liquid- and vapor-phase waste remediation applications. The porous polymeric networks, are highly porous, three-dimensional structures characterized by high surface areas. The polymeric networks comprise polymers polymerized from aldehydes and phenolic molecules.

Abstract: Chalcogenide compounds, including ternary and quaternary tin and antimony chalcogenides, for use as absorbents in the remediation of hazardous materials are provided. Also provided are methods for using the chalcogenides in the remediation of ionic and elemental metals from aqueous and non-aqueous fluids.

Abstract: Composite ion-exchange materials for use in an ion-exchange column are provided. Also provided are ion-exchange columns packed with the materials and methods for using the materials to remove metal ions from samples, such as waste water samples. The composite ion-exchange materials comprise a composite material comprising a metal chalcogenide and an alginate, wherein the composite material is mixed with a granular material.

Abstract: Porous polymeric networks and composite materials comprising metal nanoparticles distributed in the polymeric networks are provided. Also provided are methods for using the polymeric networks and the composite materials in liquid- and vapor-phase waste remediation applications. The porous polymeric networks, are highly porous, three-dimensional structures characterized by high surface areas. The polymeric networks comprise polymers polymerized from aldehydes and phenolic molecules.

Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Abstract: Composites comprising a continuous matrix formed from compounds having a rock salt structure (represented by the structure “MQ”) and inclusions comprising chalcogenide compounds having a rock salt structure (represented by the structure “AB”) are provided. Composites having the structure MQ-ABC2, where MQ represents a matrix material and ABC2 represents inclusions comprising a chalcogenide dispersed in the matrix material are also provided.

Abstract: Methods for the synthesis of compounds of the formula A2xMxSn3-xS6, where x has a value in the range from 0.5 to 1; A is Li+, Na+, K+, or Rb+; and M is Mg2+, Mn2+, Zn2+, or Fe2+, are provided. Also provided are methods of remediating fluid samples using the compounds.

Abstract: Materials comprising an A/M/X compound are provided. An A/M/X compound is a compound comprising one or more A moieties, one or more M atoms and one or more X atoms, where the A moieties are selected from organic cations and elements from Group 1 of the periodic table, the M atoms are selected from elements from Group 14 of the periodic table, and the X atoms are selected from elements from Group 17 of the periodic table. The materials include two-phase materials in which the A/M/X compound provides a first phase and a dopant compound provides a second phase.

Abstract: Porous polymeric networks and composite materials comprising metal nanoparticles distributed in the polymeric networks are provided. Also provided are methods for using the polymeric networks and the composite materials in liquid- and vapor-phase waste remediation applications. The porous polymeric networks, are highly porous, three-dimensional structures characterized by high surface areas. The polymeric networks comprise polymers polymerized from aldehydes and phenolic molecules.

Abstract: Photovoltaic cells incorporating the compounds A/M/X compounds as hole transport materials are provide. The A/M/X compounds comprise one or more A moieties, one or more M atoms and one or more X atoms. The A moieties are selected from organic cations and elements from Group 1 of the periodic table, the M atoms are selected from elements from at least one of Groups 3, 4, 5, 13, 14 or 15 of the periodic table, and the X atoms are selected from elements from Group 17 of the periodic table.

Abstract: Compounds, methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The detection of incident radiation can be accomplished by employing inorganic compounds that include elements with high atomic numbers, that have band gaps of at least about 1.5 eV, and that have an electrical resistivity of at least 106 ?cm as photoelectric materials in a radiation detector. The compounds include inorganic compounds comprising at least one element from periods five or six of the Periodic Table of the Elements.

Abstract: A thermoelectric composition comprises a material represented by the general formula (AgaX1?a)1±x(SnbPb1?b)mM?1?yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M? is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently >0 and ?1; x and y are independently >0 and <1; and 2?m?30. The compositions exhibit a figure of merit ZT of up to about 1.4 or higher, and are useful as p-type semiconductors in thermoelectric devices.

Abstract: A nonlinear optic article for difference frequency generation is provided. The article comprises a wave mixer configured to generate a difference frequency mixing signal, the wave mixer comprising a compound made from one or more noncentrosymmetric crystal-glass phase-change materials comprising one or more chalcogenide compounds that are structurally one dimensional and comprise a polymeric 1?[PSe6?] chain or a polymeric 1?[P2Se62?] chain, wherein the one or more chalcogenide compounds are capable of difference frequency generation.

Abstract: Thermoelectric eutectic and off-eutectic compositions comprising a minor phase in a thermoelectric matrix phase are provided. These compositions include eutectic and near eutectic compositions where the matrix phase is a chalcogenide (S, Se, Te) of Ge, Sn, or Pb or an appropriate alloy of these compounds and at least one of Ge, Ge1?xSix, Si, ZnTe, and Co are precipitated as the minor phase within the matrix. Methods of making and using the compositions are also provided. The thermoelectric and mechanical properties of the compositions make them well-suited for use in thermoelectric applications. Controlled doping of eutectic compositions and hypereutectic compositions can yield large power factors. By optimizing both the thermal conductivities and power factors of the present compositions, ZT values greater than 1 can be obtained at 700K.

Abstract: A nonlinear optic article for difference frequency generation is provided. The article comprises a wave mixer configured to generate a difference frequency mixing signal, the wave mixer comprising a compound made from one or more noncentrosymmetric crystal-glass phase-change materials comprising one or more chalcogenide compounds that are structurally one dimensional and comprise a polymeric 1?[PSe6?] chain or a polymeric 1?[P2Se62?] chain, wherein the one or more chalcogenide compounds are capable of difference frequency generation.

Abstract: Compounds, methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The detection of incident radiation can be accomplished by employing inorganic compounds that include elements with high atomic numbers, that have band gaps of at least about 1.5 eV, and that have an electrical resistivity of at least 106 ?cm as photoelectric materials in a radiation detector. The compounds include inorganic compounds comprising at least one element from periods five or six of the Periodic Table of the Elements.

Abstract: A process for producing an optical glass fiber from crystal-glass phase material. In one embodiment, the process includes the step of providing a molten crystal-glass phase material in a container, wherein the temperature of the molten crystal-glass phase material is at or above the melting temperature of the molten crystal-glass phase material, Tm, to allow the molten crystal-glass phase material is in liquid phase. The process further includes the step of cooling the molten crystal-glass phase material such that the temperature of the molten crystal-glass phase material, T1, is reduced to below Tm to cause the molten crystal-glass phase material to be changed from the liquid phase to a viscous melt.

Abstract: Chalcogenide compounds, including ternary and quaternary tin and antimony chalcogenides, for use as absorbents in the remediation of hazardous materials are provided. Also provided are methods for using the chalcogenides in the remediation of ionic and elemental metals from aqueous and non-aqueous fluids.

Abstract: A thermoelectric material and a method of using a thermoelectric material is provided. The thermoelectric material can include at least one compound. For example, the at least one compound may be a Group IV-VI compound such as lead telluride. The at least one compound may further include one or more dopants such as sodium, potassium, and thallium. The method of using a thermoelectric material can include exposing at least one portion of the at least one compound to a temperature greater than about 700 K.