Abstract: The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1?x(Sn2±ySb2±zTe5)x??(I) with 0.0001?x?0.5, 0?y<2 and 0?z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|?60 ?V/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 ?W/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Abstract: Composites comprising a continuous matrix formed from compounds having a rock salt structure (represented by the structure “MQ”) and inclusions comprising chalcogenide compounds having a rock salt structure (represented by the structure “AB”) are provided. Composites having the structure MQ-ABC2, where MQ represents a matrix material and ABC2 represents inclusions comprising a chalcogenide dispersed in the matrix material are also provided.

Abstract: A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance.

Abstract: A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance.

Abstract: A process for producing an optical glass fiber from crystal-glass phase material. In one embodiment, the process includes the step of providing a molten crystal-glass phase material in a container, wherein the temperature of the molten crystal-glass phase material is at or above the melting temperature of the molten crystal-glass phase material, Tm, to allow the molten crystal-glass phase material is in liquid phase. The process further includes the step of cooling the molten crystal-glass phase material such that the temperature of the molten crystal-glass phase material, T1, is reduced to below Tm to cause the molten crystal-glass phase material to be changed from the liquid phase to a viscous melt.

Abstract: Soluble chalcogenido clusters together with transition metal ions and main group elements are shown to provide gels having interconnected, open frameworks. Following supercritical drying with liquid carbon dioxide, the chalcogels may be converted to aerogels. The aerogels possess high internal surface areas with a broad pore size distribution that is dependent upon the precursors used and the aging conditions applied. Some of the gels are encompassed by formulas such as M4[M?4Qx]n, M4[M?2Qy]n, M4[M?Qx]n, M3[M?Qx]n, or Me2[M??Qx]n, where M is a divalent, trivalent, or tetravalent metal ion; M?, M?, and M?? are typically Ge, Sn, P, As, Sb, Mo, or W; and Q is typically S, Se, or Te. Methods of preparing the chalcogenido clusters are also provided.

Abstract: Thermoelectric eutectic and off-eutectic compositions comprising a minor phase in a thermoelectric matrix phase are provided. These compositions include eutectic and near eutectic compositions where the matrix phase is a chalcogenide (S, Se, Te) of Ge, Sn, or Pb or an appropriate alloy of these compounds and at least one of Ge, Ge1-xSix, Si, ZnTe, and Co are precipitated as the minor phase within the matrix. Methods of making and using the compositions are also provided. The thermoelectric and mechanical properties of the compositions make them well-suited for use in thermoelectric applications. Controlled doping of eutectic compositions and hypereutectic compositions can yield large power factors. By optimizing both the thermal conductivities and power factors of the present compositions, ZT values greater than 1 can be obtained at 700K.

Abstract: Soluble chalcogenido clusters together with transition metal ions and main group elements are shown to provide gels having interconnected, open frameworks. Following supercritical drying with liquid carbon dioxide, the chalcogels may be converted to aerogels. The aerogels possess high internal surface areas with a broad pore size distribution that is dependent upon the precursors used and the aging conditions applied. Some of the gels are encompassed by formulas such as M4[M?4Qx]n, M4[M?2Qy]n, M4[M?Qx]n, M3[M?Qx]n, or Me2[M??Qx]n, where M is a divalent, trivalent, or terravalent metal ion; M?, M?, and M?? are typically Ge, Sn, P, As, Sb, Mo, or W; and Q is typically S, Se, or Te. Methods of preparing the chalcogenido clusters are also provided.

Abstract: Phase-change compounds, and optical storage recording media, for recording and/or storage of data, comprising such compounds, according to the formula XSbySz; wherein X is selected from the group consisting of K, Rb, Tl, Na, Li, Cs and mixtures thereof; and wherein y is about 1 or about 5, and z is about 1 or about B. Preferably, X is K, y is 5 and z is B. Also provided are optical recording media comprising a layer of the phase-change material and methods of creating a reversible phasechange by irradiating the material with a laser radiation.

Abstract: An alkali metal chalcogenide, particularly K6Sn5Zn4S17, is described as useful in a process for the removal of mercury ions or other metal ions, particularly the selective removal of mercuric or other soft metal ions from water. The resulting metal chalcogenide is new. The invention can be used for the removal of mercury ions from potable water and other metal ion contaminated solutions, or from gaseous fluids.

Abstract: A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I) (Pb1-xGex)Te??(I) with x value from 0.16 to 0.5, wherein 0 to 10% by weight of the ternary compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least ±200 ?V/K at a temperature of 25° C.

Abstract: A thermoelectrically active p- or n-conductive semiconductor material is constituted by a ternary compound of the general formula (I)

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinQ2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.

Abstract: A series of alkali metal bismuth or bismuth and antimony, antimony chalcogenides (Te or S) are described. The compounds have a unique combination electrical properties.

Abstract: Alkali metal quaternary chalcogenides and process for the preparation. The chalcogenides have the formula A.sub.x B.sub.y C.sub.z D.sub.n containing (CD.sub.4).sup.4- or (C.sub.2 D.sub.6).sup.4- ions where A is selected from the group consisting of an alkali metal and a mixture of alkali metals, B is selected from the group consisting of mercury, zinc and manganese, C is a metal selected from the group consisting of germanium and tin and D is selected from the group consisting of sulfur and selenium, wherein x, y, z and n are molar amounts which provide non-linear optical transmission properties. These chalcogenides are useful as non-linear optical transmission crystals.

Abstract: Alkali metal quaternary chalcogenides and process for the preparation. The chalcogenides have the formula A.sub.x B.sub.y C.sub.z D.sub.n containing (CD.sub.4).sup.4- or (C.sub.2 D.sub.6).sup.4- ions where A is selected from the group consisting of an alkali metal and a mixture of alkali metals, B is selected from the group consisting of mercury, zinc and manganese, C is a metal selected from the group consisting of germanium and tin and D is selected from the group consisting of sulfur and selenium, wherein x, y, z and n are molar amounts which provide non-linear optical transmission properties. These chalcogenides are useful as non-linear optical transmission crystals.

Abstract: Alkali metal quaternary chalcogenides and process for the preparation. The chalcogenides have the formula A.sub.x B.sub.y C.sub.z D.sub.n containing (CD.sub.4).sup.4- or (C.sub.2 D.sub.6).sup.4- ions where A is selected from the group consisting of an alkali metal and a mixture of alkali metals, B is selected from the group consisting of mercury, zinc and manganese, C is a metal selected from the group consisting of germanium and tin and D is selected from the group consisting of sulfur and selenium, wherein x, y, z and n are molar amounts which provide non-linear optical transmission properties. These chalcogenides are useful as non-linear optical transmission crystals.

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.