Abstract: An electronic device according to various embodiments of the present invention may comprise: a housing; a display device mounted on a surface of the housing; a bezel, which is rotatably coupled to the housing, and which rotates along the circumference of the display device; and elastic portions provided on the housing so as to provide the bezel with an elastic force in a first direction. The above electronic device may be implemented variously according to embodiments.

Abstract: A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.

Abstract: Provided is a method of forming a complex plating film using multi-layer graphene metal particles. The method of forming the plating film may include preparing a powder with a metal particle structure coated with multi-layer graphene, and forming a plating film by adding the powder to a plating solution through electric plating.

Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.

Abstract: A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Abstract: A transistor including a recessed gate structure having improved doping characteristics and a method for forming such a transistor. The transistor includes a recess in a semiconductor substrate, where the recess is filled with a recessed gate structure including an impurity doped layer and a layer doped with a capture species. The capture species accumulates the impurity and diffuses the impurity to other layers of the recessed gate structure.

Abstract: Disclosed herein is a light emitting diode (LED) package. The present invention is directed to a light emitting diode (LED) package capable of efficiently dissipating heat generated from LEDs. The present invention is also directed to a LED package in which a plurality of LEDs are disposed and heat generated from the plurality of LEDs is efficiently dissipated.

Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.

Abstract: A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.

Abstract: A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.

Abstract: Provided is a method of forming a complex plating film using multi-layer graphene metal particles. The method of forming the plating film may include preparing a powder with a metal particle structure coated with multi-layer graphene, and forming a plating film by adding the powder to a plating solution through electric plating.

Abstract: A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Abstract: Disclosed herein is a light emitting diode (LED) package. The present invention is directed to a light emitting diode (LED) package capable of efficiently dissipating heat generated from LEDs. The present invention is also directed to a LED package in which a plurality of LEDs are disposed and heat generated from the plurality of LEDs is efficiently dissipated.

Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.

Abstract: A doping method that forms a doped region at a desired location of a three-dimensional (3D) conductive structure, controls the doping depth and doping dose of the doped region relatively easily, has a shallow doping depth, and prevents a floating body effect. A semiconductor device is fabricated using the same doping method. The method includes, forming a conductive structure having a sidewall, exposing a portion of the sidewall of the conductive structure, and forming a doped region in the exposed portion of the sidewall by performing a plasma doping process.

Abstract: A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.

Abstract: A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.