Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: Embodiments of the invention provide a touch sensor including a base substrate, and an electrode pattern formed on the base substrate. The electrode pattern is formed by continuously connecting one or more unit patterns, and each unit pattern has closed figures formed to be irregularly arranged therein.

Abstract: There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole.

Abstract: Disclosed herein are a printed circuit board and a method of manufacturing the same. In detail, according to a preferred embodiment of the present invention, the printed circuit board includes: an insulating layer; and a metal layer formed on the insulating layer, wherein in the metal layer, a ratio occupied by crystal orientations of (110) and (112) is 20 to 80%. By doing so, the preferred embodiment of the present invention provides a printed circuit board including the metal layer having different crystal orientations to minimize factors of hindering electrical characteristics such as electric conductivity and improve isotropy of mechanical properties and a method of manufacturing the printed circuit board.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: Disclosed herein are a printed circuit board and a method of manufacturing the same. In detail, according to a preferred embodiment of the present invention, the printed circuit board includes: an insulating layer; and a metal layer formed on the insulating layer, wherein in the metal layer, a ratio occupied by crystal orientations of (110) and (112) is 20 to 80%. By doing so, the preferred embodiment of the present invention provides a printed circuit board including the metal layer having different crystal orientations to minimize factors of hindering electrical characteristics such as electric conductivity and improve isotropy of mechanical properties and a method of manufacturing the printed circuit board.

Abstract: Disclosed herein is a bonding force test device, including: a holder mounted with a sample to which a plurality of subjects to be tested are bonded; a rotating part rotating the holder; and a fixing tip disposed in a direction in which the fixing tip faces the holder, wherein at the time of rotating the holder, the fixing tip contacts any one of the subjects to be tested in the sample and a shearing stress is applied to a bonded portion between the fixing tip and any one subject to be tested.

Abstract: The present invention relates to a UHF RFID tag, and provides a set of UHF RFID tag comprising a loop-patterned sheet on which a RFID chip is mounted so as to form a closed loop and a dipole-patterned sheet that is separate from the other. According to the present invention, loop-patterned sheets having simple form and small size can be mass-produced in a few simple types. A mounting process for a RFID chip on the loop-patterned sheets which require precise work can be simplified. In addition, a set of RFID tag according to the present invention can be applied in various environments by combining a few types of the loop-patterned sheet and various types of dipole-patterned sheets.

Abstract: There are provided a method, an apparatus and a sample for evaluating bonding strength, the method including setting a micro-region including a bonded interface in an evaculated sample, forming a first groove in a circumferential portion of the micro-region to have a predetermined depth, processing a side of the micro-region to form a second groove connected to the bonded interface, and applying pressure on the micro-region to measure a critical point at which a delamination of the micro-region is generated.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: There are provided an inspection device for substrate deformation at high temperatures and an inspection method for substrate deformation at high temperatures, the inspection device for substrate deformation at high temperatures, including a crucible including an internal space, an inspection hole disposed in an upper portion thereof so as to inspect the internal space, and a heating unit heating the internal space, an indenter tip disposed in the crucible such that a substrate fixed to the internal space is warped, and an inspection unit disposed above the crucible so as to inspect a cross-section of the substrate.

Abstract: There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: An aerosol spray apparatus and a method of forming a film using the aerosol spray apparatus are disclosed. The aerosol spray apparatus in accordance with an embodiment of the present invention includes: a carrier gas injection unit, which forms carrier gas by vaporizing liquefied gas and increases the pressure of the carrier gas; an aerosol forming unit, which forms an aerosol by mixing the carrier gas with powder; and a film forming unit, which sprays the aerosol in a normal pressure environment such that the film is formed on the surface of the board. The apparatus can perform a coating process with no restriction of the type and size of powder, simplify the process because the film can be formed in a normal temperature and pressure environment, and control a wide range of film thickness in a short time.

Abstract: The back-surface-field type of heterojunction solar cell according to the present invention comprises a crystalline silicon substrate of a first conductivity type, a semiconductor layer of the first conductivity type provided in the upper stratum of the substrate, an anti-reflective film provided on the front surface of the substrate, an intrinsic layer provided on the rear surface of the substrate, amorphous semiconductor layers of the first conductivity type and amorphous semiconductor layers of the second conductivity type repeatedly disposed alternately on the intrinsic layer, and first-conductivity-type electrodes and second-conductivity-type electrodes which are respectively provided on the amorphous semiconductor layers of the first conductivity type and the amorphous semiconductor layers of the second conductivity type.

Abstract: The back-surface-field type of heterojunction solar cell according to the present invention comprises a crystalline silicon substrate of a first conductivity type, an intrinsic layer and an amorphous silicon layer of the first conductivity type which are laminated in sequence on the front surface of the substrate, an anti-reflective film laminated on the amorphous silicon of the second conductivity type, junction regions of the first conductivity type and junction regions of the second conductivity type which are formed to a predetermined depth on the inside of the substrate from the rear surface of the substrate, and first-conductivity-type electrodes and second-conductivity-type electrodes which are respectively provided on the junction regions of the first conductivity type and the junction regions of the second conductivity type; wherein the first-conductivity-type electrodes and the second-conductivity-type electrodes are disposed alternately.