Patents by Inventor Micha Fireman

Micha Fireman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-passivated nitrogen-polar III-nitride transistor
    Patent number: 12230702
    Abstract: A HEMT comprising a channel layer of a first III-Nitride semiconductor material, grown on a N-polar surface of a back barrier layer of a second III-Nitride semiconductor material; the second III-Nitride semiconductor material having a larger band gap than the first III-Nitride semiconductor material, such that a positively charged polarization interface and two-dimensional electron gas is obtained in the channel layer; a passivation, capping layer, of said first III-Nitride semiconductor material, formed on top of and in contact with a first portion of a N-polar surface of said channel layer; a gate trench traversing the passivation, capping layer, and ending at said N-polar surface of said channel layer; and a gate conductor filling said gate trench.
    Type: Grant
    Filed: December 22, 2023
    Date of Patent: February 18, 2025
    Assignee: HRL LABORATORIES, LLC
    Inventors: Daniel Denninghoff, Andrea Corrion, Fevzi Arkun, Micha Fireman
  • SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR
    Publication number: 20240128367
    Abstract: A HEMT comprising a channel layer of a first III-Nitride semiconductor material, grown on a N-polar surface of a back barrier layer of a second III-Nitride semiconductor material; the second III-Nitride semiconductor material having a larger band gap than the first III-Nitride semiconductor material, such that a positively charged polarization interface and two-dimensional electron gas is obtained in the channel layer; a passivation, capping layer, of said first III-Nitride semiconductor material, formed on top of and in contact with a first portion of a N-polar surface of said channel layer; a gate trench traversing the passivation, capping layer, and ending at said N-polar surface of said channel layer; and a gate conductor filling said gate trench.
    Type: Application
    Filed: December 22, 2023
    Publication date: April 18, 2024
    Applicant: HRL Laboratories, LLC
    Inventors: Daniel DENNINGHOFF, Andrea CORRION, Fevzi ARKUN, Micha FIREMAN
  • SELF-PASSIVATED NITROGEN-POLAR III-NITRIDE TRANSISTOR
    Publication number: 20220069114
    Abstract: A HEMT comprising a channel layer of a first III-Nitride semiconductor material, grown on a N-polar surface of a back barrier layer of a second III-Nitride semiconductor material; the second III-Nitride semiconductor material having a larger band gap than the first III-Nitride semiconductor material, such that a positively charged polarization interface and two-dimensional electron gas is obtained in the channel layer; a passivation, capping layer, of said first III-Nitride semiconductor material, formed on top of and in contact with a first portion of a N-polar surface of said channel layer; a gate trench traversing the passivation, capping layer, and ending at said N-polar surface of said channel layer; and a gate conductor filling said gate trench.
    Type: Application
    Filed: May 4, 2021
    Publication date: March 3, 2022
    Applicant: HRL Laboratories, LLC
    Inventors: Daniel DENNINGHOFF, Andrea Corrion, Fevzi Arkun, Micha Fireman