Abstract: A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered by the spacers or the mask. The method may further include depositing a material over the semiconductor device, removing the mask and etching the conductive layer to remove portions of the conductive layer not covered by the spacers or the material, where remaining portions of the conductive layer form the conductive structures.

Abstract: The present invention relates generally to compositions and methods for treating cancer and neoplastic disease. Provided herein are substituted amidopyridine or amidopyridazine derivative compounds and pharmaceutical compositions comprising said compounds. The subject compounds and compositions are useful for inhibition histone demethylase. Furthermore, the subject compounds and compositions are useful for the treatment of cancer, such as prostate cancer, breast cancer, bladder cancer, lung cancer and/or melanoma and the like.

Abstract: Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.

Abstract: Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.

Abstract: A battery pack includes at least one serpentine fluid circulation tube that extends around part of the periphery of a plurality of electric cells. First and second segments of the tube are disposed adjacent a first and a second edge of a first set of the plurality of electric cells. The sets of electric cells are disposed in an alternating arrangement. A first fin and a second fin are provided between each of the electric cells. The fins have a reverse turn wrapped around the segments of the tube. The fins have internal ends that are disposed between the electric cells and the tube segments. The battery pack may be assembled by folding the fins around the electric cells and the tube or by preforming folded sheets that define thermal fins and assembling the folded sheets over segments of the tube from opposite sides of the electric cells.

Abstract: A memory device includes a group of memory cells formed on a substrate, each memory cell including a source region and a drain region formed in the substrate. The memory device also includes a protection layer formed on top surfaces of the source regions and the drain regions, and on side surfaces of the group of memory cells.

Abstract: An integrated circuit system includes providing a semiconductor substrate and forming buried word lines in the semiconductor substrate with the buried word lines including vertical charge-trapping dielectric layers. The system further includes forming bit lines further comprising forming in-substrate portions in the semiconductor substrate, and forming above-substrate portions over the semiconductor substrate.

Abstract: Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.

Abstract: A memory device includes a group of memory cells formed on a substrate, each memory cell including a source region and a drain region formed in the substrate. The memory device also includes a protection layer formed on top surfaces of the source regions and the drain regions, and on side surfaces of the group of memory cells.

Abstract: This invention provides an enhancement to messaging systems by providing a message notification feature which allows a user to manage only new messages for which a notification has not yet been cleared without having to access or download the entire set of messages. This management may be performed in single window that operates in conjunction with an application associated with the messaging system. The notification management permits manipulation of the message notifications without influencing the status of the messages themselves, while providing access to the data contained in these messages. This addresses the needs of those users who frequently check their incoming communications queues and need to determine very quickly which items need urgent attention and which ones can be deferred. The present invention further provides specific functionalities for handling a particular message when it does need urgent attention.

Abstract: This invention provides an enhancement to messaging systems by providing a message notification feature which allows a user to manage only new messages for which a notification has not yet been cleared without having to access or download the entire set of messages. This management may be performed in single window that operates in conjunction with an application associated with the messaging system. The notification management permits manipulation of the message notifications without influencing the status of the messages themselves, while providing access to the data contained in these messages. This addresses the needs of those users who frequently check their incoming communications queues and need to determine very quickly which items need urgent attention and which ones can be deferred. The present invention further provides specific functionalities for handling a particular message when it does need urgent attention.

Abstract: A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered by the spacers or the mask. The method may further include depositing a material over the semiconductor device, removing the mask and etching the conductive layer to remove portions of the conductive layer not covered by the spacers or the material, where remaining portions of the conductive layer form the conductive structures.

Abstract: A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered by the spacers or the mask. The method may further include depositing a material over the semiconductor device, removing the mask and etching the conductive layer to remove portions of the conductive layer not covered by the spacers or the material, where remaining portions of the conductive layer form the conductive structures.

Abstract: The present invention facilitates memory devices and operation of dual bit and single bit memory devices by providing systems and methods that employ a salicide block to vary and equalize the resistance of a memory array during fabrication. The present invention includes utilizing a common charge dissipation region to mitigate charge-loss by providing protection against charging up of the various lines as a result of further plasma etching processes. The salicide block equalizes the charge dissipation in the memory array by providing each wordline path with a varied amount of resistance in addition to the total path resistance. Because the charge protection provided to each wordline otherwise varies depending on the resistance path to a common discharge element, a salicide block for resistance equalization provides greater reliability and predictability during processing. Other such shapes conducive for any desired resistance path fall within the scope of the invention.

Abstract: A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectric material. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer.

Abstract: A multiple dual bit integrated circuit system is provided that includes forming first address lines in a semiconductor substrate and forming a charge-trapping layer over the semiconductor substrate. A semiconductor layer is formed over the charge-trapping layer and second address lines are formed in the semiconductor layer to form a plurality of dual bit locations.

Abstract: Methods and apparatus for operating on a non-text (voice or fax) message include for each of a number of voice messages, searching each voice message for signal samples having one of a plurality of sets of pre-defined characteristics (such as any seven or ten digit number which is then assumed to be a telephone number). For each signal sample found to have one of the sets of pre-defined characteristics, the found signal sample is associated with an equivalent text string and this text string is stored in an envelope for the message. Based on a user input, the messages may be searched for a given text string and on finding a message envelope containing the given text string, such message may be operated upon.

Abstract: Useful by both individuals and bartending ‘mixologists’, a convenient beverage-bottle cap pry-opener is adapted to user's wrist, thereby facilitating a uniquely simple and ergonomically comfortable wrist-twist action by which to attain quick and easy opening without use of one's hands; and is portably worn upon the person in the form of either a bracelet or glovelet embodiment. The glovelet is preferably of conventional open-fingered style, having an integral wrist-band thereto which wraps around the wrist where it is secured via conventional hook-&-loop fastener; while arranged at the distal-end of the wrist-strap is a substantially conventional metal bottle-cap opener device.

Abstract: A medical synchrotron which cycles rapidly in order to accelerate particles for delivery in a beam therapy system. The synchrotron generally includes a radiofrequency (RF) cavity for accelerating the particles as a beam and a plurality of combined function magnets arranged in a ring. Each of the combined function magnets performs two functions. The first function of the combined function magnet is to bend the particle beam along an orbital path around the ring. The second function of the combined function magnet is to focus or defocus the particle beam as it travels around the path. The radiofrequency (RF) cavity is a ferrite loaded cavity adapted for high speed frequency swings for rapid cycling acceleration of the particles.

Abstract: A device for teaching a baseball or softball pitcher includes a storage unit for holding a pre-marked tape measure, a pitching rubber, and a home plate along with fastening devices for securing the pitching rubber and home plate in their desired position.