Abstract: A microsensor module includes: one or more microsensors; a power supply; communication circuit; and processing circuitry. The processing circuitry may be configured to: receive data measured by the one or more microsensors; process the measured data to determine a plurality of different performance parameters related to technique of an athlete when performing a sport; and output, using the communication circuit, real-time information about the correctness of technique and performance level of the athlete performing the sport, wherein the microsensor module is encapsulated in a water-proof package that is attachable or adjoinable to the athlete's body.

Abstract: An integrated microfluidic systems and the method of fabrication is disclosed wherein various microfluidic devices fabricated onto substrates are bonded together either using an intermediary layer or not to facilitate the bonding process. The microfluidic ports on the microfluidic devices are aligned prior to bonding and the bonding results in leak-proof seals between the devices. Moreover, the fluidic capacitance using the present invention is eliminated thereby enabling microfluidic systems with far faster time responses. The example embodiments have a wide range of applications including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of multiple microfluidic devices.

Abstract: A method for depositing, patterning and removing a layer of aluminum oxide as a masking material layer for performing a deep, high-aspect ratio etches into a substrate. The method comprising deposing a photoresist onto the substrate, performing lithography processing on the photoresist, developing the photoresist to pattern the photoresist into a mask design, depositing a thin-film layer of aluminum oxide; immersing the substrate into a solution to lift-off the aluminum oxide in regions where the aluminum oxide is deposited on top of the photoresist thereby leaving the patterned aluminum oxide layer on the substrate where no photoresist was present, performing deep reactive ion etching on the substrate wherein the hard masking material layer composed of aluminum oxide functions as a protective masking layer on the substrate to prevent etching from occurring where the aluminum oxide is present, and removing the aluminum oxide masking layer by immersion in a solution.

Abstract: A method for the etching of deep, high-aspect ratio features into silicon carbide (SiC), gallium nitride (GaN) and similar materials using an Inductively-Coupled Plasma (ICP) etch process technology is described. This technology can also be used to etch features in silicon carbide and gallium nitride having near vertical sidewalls. The disclosed method has application in the fabrication of electronics, microelectronics, power electronics, Monolithic Microwave Integrated Circuits (MMICs), high-voltage electronics, high-temperature electronics, high-power electronics, Light-Emitting Diodes (LEDs), Micro-Electro-Mechanical Systems (MEMS), micro-mechanical devices, microelectronic devices and systems, nanotechnology devices and systems, Nano-Electro-Mechanical Systems (NEMS), photonic devices, and any devices and/or structures made from silicon carbide and/or gallium nitride.

Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve that uses a multicity of piezoelectric actuators. The 3-way has a wide range of applications including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The three-way microvalve device and method of fabrication can be tailored to the requirements of a wide range of applications and fluid types. The microvalve can be used to control fluids at high pressures and provides for low flow resistances when the microvalve is open and has low leakage when closed.

Abstract: A package and method of packaging for integrated microfluidic devices and systems is disclosed wherein a package is made from individually processed and patterned layers of LTCC green tape, that is aligned and stacked, and then co-fired to form a stable LTCC ceramic packaging modules. Subsequently, microfluidic device die and/or integrated microfluidic systems device die are bonded to pre-determined areas of the packaging modules and the modules are aligned bonded together to form leak-free, sealed packages for the microfluidic devices and systems. The use of LTCC materials and techniques provides a low-cost flexible and easily customizable packaging approach for microfluidic devices and systems that can be designed and transitioned into production with significant development time and cost.

Abstract: A method for depositing, patterning and removing a layer of aluminum oxide as a masking material layer for performing a deep, high-aspect ratio etches into a substrate. The method comprising deposing a photoresist onto the substrate, performing lithography processing on the photoresist, developing the photoresist to pattern the photoresist into a mask design, depositing a thin-film layer of aluminum oxide; immersing the substrate into a solution to lift-off the aluminum oxide in regions where the aluminum oxide is deposited on top of the photoresist thereby leaving the patterned aluminum oxide layer on the substrate where no photoresist was present, performing deep reactive ion etching on the substrate wherein the hard masking material layer composed of aluminum oxide functions as a protective masking layer on the substrate to prevent etching from occurring where the aluminum oxide is present, and removing the aluminum oxide masking layer by immersion in a solution.

Abstract: A method for the etching of deep, high-aspect ratio features into silicon carbide (SiC), gallium nitride (GaN) and similar materials using an Inductively-Coupled Plasma (ICP) etch process technology is described. This technology can also be used to etch features in silicon carbide and gallium nitride having near vertical sidewalls. The disclosed method has application in the fabrication of electronics, microelectronics, power electronics, Monolithic Microwave Integrated Circuits (MMICs), high-voltage electronics, high-temperature electronics, high-power electronics, Light-Emitting Diodes (LEDs), Micro-Electro-Mechanical Systems (MEMS), micro-mechanical devices, microelectronic devices and systems, nanotechnology devices and systems, Nano-Electro-Mechanical Systems (NEMS), photonic devices, and any devices and/or structures made from silicon carbide and/or gallium nitride.

Abstract: A method for the etching of deep, high-aspect ratio features into silicon carbide (SiC), gallium nitride (GaN) and similar materials using an Inductively-Coupled Plasma (ICP) etch process technology is described. This technology can also be used to etch features in silicon carbide and gallium nitride having near vertical sidewalls. The disclosed method has application in the fabrication of electronics, microelectronics, power electronics, Monolithic Microwave Integrated Circuits (MMICs), high-voltage electronics, high-temperature electronics, high-power electronics, Light-Emitting Diodes (LEDs), Micro-Electro-Mechanical Systems (MEMS), micro-mechanical devices, microelectronic devices and systems, nanotechnology devices and systems, Nano-Electro-Mechanical Systems (NEMS), photonic devices, and any devices and/or structures made from silicon carbide and/or gallium nitride.

Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve are disclosed. The micro-valve device has a wide range of applications, including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The discloses three-way micro-valve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types, and can also use a number of different actuation methods, including actuation methods that have very small actuation pressures and energy densities even at higher fluidic pressures.

Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve are disclosed. The micro-valve device has a wide range of applications, including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The discloses three-way micro-valve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types, and can also use a number of different actuation methods, including actuation methods that have very small actuation pressures and energy densities even at higher fluidic pressures.

Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve are disclosed. The micro-valve device has a wide range of applications, including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The discloses three-way micro-valve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types, and can also use a number of different actuation methods, including actuation methods that have very small actuation pressures and energy densities even at higher fluidic pressures.

Abstract: A method is disclosed for manufacturing integrated circuits, microelectronics, micro-electro-mechanical systems (MEMS), nano-electro-mechanical systems (NEMS), photonic, and any micro- and nano-fabricated devices and systems designs that allow these designs to be kept secure. The manufacturing of the devices in the substrates is performed in a traditional manner at a foundry that can be located anywhere in the world., The manufacturing at this foundry is stopped just before the fabrication of the first layer of electrical interconnects. At this stage, the semiconductor substrates with the devices, minus electrical interconnects, are sent back to the design organization (or their designated trusted foundry) to perform the fabrication of the electrical interconnects to complete the entire manufacturing process.

Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve are disclosed. The micro-valve device has a wide range of applications, including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The discloses three-way micro-valve device and method of fabrication that can be tailored to the requirements of a wide range of applications and fluid types, and can also use a number of different actuation methods, including actuation methods that have very small actuation pressures and energy densities even at higher fluidic pressures.

Abstract: A method or process is disclosed for etching deep, high-aspect ratio features into silicon dioxide material layers and substrates, including glass, fused silica, quartz, or similar materials, using a plasma etch technology. The method has application in the fabrication and manufacturing of MEMS, microelectronic, micro-mechanical, photonic and nanotechnology devices in which silicon dioxide material layers or substrates are used and must be patterned and etched. Devices that benefit from the method described in this invention include the fabrication of MEMS gyroscopes, resonators, oscillators, microbalances, accelerometers, for example. The etch method or process allows etch depths ranging from below 10 microns to over 1 millimeter and aspect ratios from less than 1 to 1 to over 10 to 1 with etched feature sidewalls having vertical or near vertical angles. Additionally, the disclosed method provides requirements of the etched substrates to reduce or eliminate undesired effects of an etch.

Abstract: A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.

Abstract: A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.

Abstract: A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.

Abstract: A method is disclosed for manufacturing integrated circuits, microelectronics, micro-electro-mechanical systems (MEMS), nano-electro-mechanical systems (NEMS), photonic, and any micro- and nano-fabricated devices and systems designs that allow these designs to be kept secure. The manufacturing of the devices in the substrates is performed in a traditional manner at a foundry that can be located anywhere in the world., The manufacturing at this foundry is stopped just before the fabrication of the first layer of electrical interconnects. At this stage, the semiconductor substrates with the devices, minus electrical interconnects, are sent back to the design organization (or their designated trusted foundry) to perform the fabrication of the electrical interconnects to complete the entire manufacturing process.

Abstract: A variable capacitor device is disclosed in which the capacitive tuning ratio and quality factor are increased to very high levels, and in which the capacitance value of the device is tuned and held to a desired value with a high level of accuracy and precision using a laser micromachining tuning process on suitably designed and fabricated capacitor devices. The tuning of the variable capacitor devices can be performed open-loop or closed-loop, depending on the precision of the eventual capacitor value needed or desired. Furthermore, the tuning to a pre-determined value can be performed before the variable capacitor device is connected to a circuit, or alternatively, the tuning to a desired value can be performed after the variable capacitor device has been connected into a circuit.