Abstract: User interfaces that enable monitoring of the configuration and status of computing systems are disclosed. The user interfaces may summarize data collected from a plurality of computing systems. The data may be summarized by flagging collected information that does not match a set of reference information or the collected information from other systems. The flags may be presented at a variety of levels of granularity, and the presence of a flag at one level of granularity may indicate the presence of a flagged item at any lower level of granularity. A dynamic hierarchical user interface provides a user with a high level overview of system status, as well as the ability to drill down to identify specific system information that does not adhere to a specified configuration.

Abstract: A method is described for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, which comprises the steps of supplying original species SiH4 and CCl4 into a growth chamber, decomposing at elevated temperatures, producing decomposition product SiH2, SiH, Si, CCl3, or CCl2, producing interaction product HCl, CH3Cl, CH4, or SiH2Cl2, etching by one of the byproducts HCl to suppress Si nucleation, providing main species SiCl2 and CH4 at a cooled insert located on sides of a substrate holder and at a shower-head located on top of the substrate holder, in the growth chamber, with proper Si to C atom ratio and Si to Cl atom ratio, to suppress parasitic deposits, and depositing SiC on a substrate at a proper growth substrate temperature (1500 to 1800 centigrade range).

Abstract: A chemical analysis system is disclosed wherein, in evacuating a preconcentrator housing (2) prior to desorption, a pump system (13) reduces an internal pressure of the preconcentrator housing to a level substantially equal to an internal pressure of a chemical analyzer such that flow restrictors and/or membranes (15) between the chemical analyzer (7) and the preconcentrator housing (2) may be omitted. The chemical analysis system includes a chemical analyzer (7), a preconcentrator housing (2) coupled to the chemical analyzer, the preconcentrator housing enclosing a temperature control element (5, 18) and a sorbent material (1), the temperature control element configured to heat the sorbent material to adsorb or desorb a chemical of interest; and a pump system (13) coupled to the preconcentrator housing and the chemical analyzer, the pump system configured to evacuate the preconcentrator housing prior to desorption of the chemical of interest.

Abstract: A stent delivery system includes a delivery member, a frictional interfacing member disposed on a distal region of the delivery member, the frictional interfacing member comprising a plurality of perfusion channels, a self-expanding stent disposed over the respective frictional interfacing member and delivery member in a radially contracted configuration, and a sheath defining disposed over the respective self-expanding stent, frictional interfacing member, and delivery member, wherein the frictional interfacing member resists axial and/or rotational movement of the stent relative to the delivery member while the stent is in its radially contracted configuration, and wherein the perfusion channels permit fluid to flow from an interior region of the sheath proximal of the frictional interfacing member to an interior region of the sheath distal of the frictional interfacing member.

Abstract: A chemical pre-concentrator includes a conduit defining a flow path between two ends and having a heating element disposed within the conduit, such that the heating element has at least one sorbent material deposited directly on at least a portion of a conductive surface of the heating element. Some such heating elements are in the form of electrically conductive strips defining both a plurality of apertures through the strip and a series of undulations spaced along the flow path.

Abstract: A roll riser for supporting rolled goods during shipment is formed as a doughnut from a recyclable material such as corrugated paper or foamed plastic. The weight of the roll riser is selected in consideration of the size and weight to the rolled goods.

Abstract: In one general aspect, a sample is transferred into a mass spectrometer by capturing a sample on a collector, inserting the collector into a sample chamber coupled to the mass spectrometer and a vacuum pump, evacuating the sample chamber using the vacuum pump to reduce an internal pressure of the sample chamber to a level less than atmospheric pressure, heating the collector to release the sample from the collector, and introducing the sample into the mass spectrometer from the evacuated sample chamber.

Abstract: This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+ N? SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). This is a betavoltaic device, made of ultra-shallow junctions, which allows such penetration of emitted lower energy electrons, thus, reducing or eliminating losses through electron-hole pair recombination at the surface.

Abstract: We introduce a new technology for Manufactureable, High Power Density, High Volume Utilization Nuclear Batteries. Betavoltaic batteries are an excellent choice for battery applications which require long life, high power density, or the ability to operate in harsh environments. In order to optimize the performance of betavoltaic batteries for these applications or any other application, it is desirable to maximize the efficiency of beta particle energy conversion into power, while at the same time increasing the power density of an overall device. Various devices and methods to solve the current industry problems and limitations are presented here.

Abstract: Methods and apparatus for setting a lash space between a lost motion piston and an engine valve or other components of an internal combustion engine are disclosed. The apparatus may include a lock nut gauge, a zero setting gauge extending into the lock nut gauge, a lash setting gauge extending into the zero setting gauge, and a bit stem extending through the lash setting gauge. The bit stem may include a bit which is used to rotate a tappet screw that sets the lash. A key extending between the zero setting gauge and a scroll channel in the lash setting gauge may be used to control setting of the tappet screw, and thus the setting of lash.

Abstract: In a hydrocarbon producing wellbore, liquids (oil, condensate, water of mixtures thereof) from the formation may accumulate and build up a hydrostatic pressure gradient, which can kill gas production. Various embodiments of the present invention include a plunger lift system that can remove said formation liquids from a wellbore. A piston, including a sleeve with a hollow passage may travel downhole, accumulate formation liquids and utilizing the gas pressure deliver said formation liquids to the top of the wellbore for removal. The piston face may be one single wall that closes the hollow passage or the piston face may be comprised of a plug and an seat that unite to form a complete piston face downhole. Aspects of the plunger lift system, for example the sleeve and or the plug may be at least partially formed from materials that are buoyant in the formation liquids.

Abstract: This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N? SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). In one example, tritium is used as a fuel source. In other embodiments, radioisotopes (such as Nickel-63, promethium or phosphorus-33) may be used. Low energy beta sources, such as tritium, emit low energy beta-electrons that penetrate very shallow distances (as shallow as 5 nm) in semiconductors, including SiC, and can result in electron-hole pair creation near the surface of a semiconductor device rather than pair creation in a device's depletion region.

Abstract: We introduce a new technology for Manufacturable, High Power Density, High Volume Utilization Nuclear Batteries. Betavoltaic batteries are an excellent choice for battery applications which require long life, high power density, or the ability to operate in harsh environments. In order to optimize the performance of betavoltaic batteries for these applications or any other application, it is desirable to maximize the efficiency of beta particle energy conversion into power, while at the same time increasing the power density of an overall device. The small (submicron) thickness of the active volume of both the isotope layer and the semiconductor device is due to the short absorption length of beta electrons. The absorption length determines the self absorption of the beta particles in the radioisotope layer as well as the range, or travel distance, of the betas in the semiconductor converter which is typically a semiconductor device comprising at least one PN junction.

Abstract: A novel approach for the growth of high-quality on-axis epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, is described here. The method includes a method of substrate preparation, which allows for the growth of “on-axis” SiC films, plus an approach giving the opportunity to grow silicon carbide on singular (a small-angle miscut) substrates, using halogenated carbon-containing precursors (carbon tetrachloride, CCl4, or halogenated hydrocarbons, CHCl3, CH2Cl2, or CH3Cl, or similar compounds or chemicals), or introducing other chlorine-containing species, in the gas phase, in the growth chamber. At gas mixtures greater than the critical amount, small clusters of SiC are etched, before they can become stable nuclei. The presence of chlorine and the formation of gas species allow an increased removal rate of these nuclei, in contrast to the growth without the presence of chlorine.

Abstract: To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given.

Abstract: An approach for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique is described here. The method comprises modifications in the design of the typical cold-wall CVD reactors, providing a better temperature uniformity in the reactor bulk and a low temperature gradient in the vicinity of the substrate, and an approach to increase the silicon carbide growth rate and to improve the quality of the growing layers, using halogenated carbon-containing precursors (carbon tetrachloride CCl4 or halogenated hydrocarbons, CHCl3, CH2Cl2, CH3Cl, etc.), or introducing other chlorine-containing species in the gas phase in the growth chamber. The etching effect, proper ranges, and high temperature growth are also examined.

Abstract: This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N? SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). In one example, tritium is used as a fuel source. In other embodiments, radioisotopes (such as Nickel-63, promethium or phosphorus-33) may be used. Low energy beta sources, such as tritium, emit low energy beta-electrons that penetrate very shallow distances (as shallow as 5 nm) in semiconductors, including SiC, and can result in electron-hole pair creation near the surface of a semiconductor device rather than pair creation in a device's depletion region.

Abstract: The present invention discloses and claims methods and devices for the rapid mechanical isolation of monocot plant tissues suitable for transformation or tissue culture. The invention includes mechanical devices for substantially isolating target plant tissues for use as transformable explants, and propagation of transgenic plants and plant tissues.