Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an orientation-dependent etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material to form a first protrusion and a cavity having a boundary that is below a surface of the semiconductor material, wherein the first protrusion extends from the boundary of the cavity. The method further includes forming a non-conformal material over a first portion of the first protrusion using an angled deposition of the non-conformal material, wherein the angle of deposition of the non-conformal material is non-perpendicular to the surface of the semiconductor material. Other embodiments are described and claimed.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an electrochemical etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor structure having a silicon-on-insulator (SOI) substrate and a dielectric region is disclosed. The dielectric region is adjacent to the active layer of the SOI substrate and the dielectric region includes a portion of a buried oxide (BOX) layer of the SOI substrate. At least a portion of the dielectric region extends from a surface of the active layer of the SOI substrate to a depth of at least about three microns or greater below the surface of the active layer. Other embodiments are described and claimed.