Abstract: Methods are described for depositing thin films, such as those used in forming a photovoltaic cell or device. In particular embodiments, one or more layers are deposited on a substrate by plasma spraying over the substrate. A grain size of grains in each of the one or more layers is at least approximately two times greater than a thickness of the respective layer. Accordingly, large flat-grained structures are formed in each respective layer, and grain boundaries within each respective layer can be minimized.

Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Abstract: In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.

Abstract: In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.

Abstract: In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.

Abstract: In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.

Abstract: In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.

Abstract: In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.

Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Abstract: In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.

Abstract: In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.

Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body comprising at least one chalcogenide alloy having a chalcogenide alloy purity of at least approximately 2N7, gaseous impurities less than 500 ppm for oxygen (O), nitrogen (N), and hydrogen (H) individually, and a carbon (C) impurity less than 500 ppm. In a particular embodiment, the chalcogens of the at least one chalcogenide alloy comprises at least 20 atomic percent of the target body composition, and the chalcogenide alloy has a density of at least 95% of the theoretical density for the chalcogenide alloy.

Abstract: A sputter target, where the sputter target is comprised of Co, greater than 0 and as much as 24 atomic percent Cr, greater than 0 and as much as 20 atomic percent Pt, greater than 0 and as much as 20 atomic percent B, and greater than 0 and as much as 10 atomic percent X1, where X1 is an element selected from the group consisting of Ag, Ce, Cu, Dy, Er, Eu, Gd, Ho, In, La, Lu, Mo, Nd, Pr, Sm, Tl, W, and Yb. The sputter target is further comprised of X2, wherein X2 is selected from the group consisting of W, Y, Mn, and Mo. Moreover, the sputter target is further comprised of 0 to 7 atomic percent X3, wherein X3 is an element selected from the group consisting of Ti, V, Zr, Nb, Ru, Rh, Pd, Hf, Ta, and Ir. The thin film sputtered by the sputter target has a coercivity value between 1000 Oersted and 4000 Oersted.

Abstract: A sputter target, where the sputter target is comprised of cobalt (Co), greater than 0 and as much as 24 atomic percent chromium (Cr), greater than 0 and as much as 20 atomic percent platinum (Pt), greater than 0 and as much as 20 atomic percent boron (B), and greater than 0 and as much as 10 atomic percent gold (Au). The sputter target is further comprised of X1, where X1 is selected from the group consisting of tungsten (W), yttrium (Y), manganese (Mn), and molybdenum (Mo). The sputter target is further comprised of 0 to 7 atomic percent X2, wherein X2 is an element selected from the group consisting of titanium (Ti), vanadium (V), zirconium (Zr), niobium (Nb), ruthenium (Ru), rhodium (Rh), palladium (Pd), hafnium (Hf), tantalum (Ta), and iridium (Ir).

Abstract: A target for a deposition apparatus is formed by blending at least two different types of powders together and consolidating the powders with a powder metallurgy process to form a billet. The target is then formed from the billet. The target includes a first material phase having a first PTF and a second material phase having a second PTF higher than the first PTF. The second PTF is also higher than a PTF of a material having the same chemistry as the target.

Abstract: An ingot of material which is normally too brittle to allow successful rolling and wrought processing is formed so as to have a thickness-to-width ratio of less than about 0.5 and is annealed in a temperature range of 1000° F. to 2500° F. for a preselected time. The ingot is then rolled in a temperature range of 1500° F. to 2500° F. Additional/optional annealing of the resulting rolled plate in a temperature range of 500° F. to 2000° F., or between room temperature and 1500° F., and/or a final annealing between 500° F. and 1500° F., is possible. Sputtering targets are cut out of the rolled plate and used for the manufacture of storage disks.

Abstract: An ingot of material which is normally too brittle to allow successful rolling and wrought processing is formed so as to have a thickness-to-width ratio of less than about 0.5 and is annealed in a temperature range of 1000° F. to 2500° F. for a preselected time. The ingot is then rolled in a temperature range of 1500° F. to 2500° F. Additional/optional annealing of the resulting rolled plate in a temperature range of 500° F. to 2000° F., or between room temperature and 1500° F., and/or a final annealing between 500° F. and 1500° F., is possible. Sputtering targets are cut out of the rolled plate and used for the manufacture of storage disks.

Abstract: Magnetic materials for use in sputtering targets are hot rolled and stretched at ambient temperature or at a temperature not exceeding 1400° F. The magnetic material can be pure Co, pure Ni, or Co based alloys.

Abstract: A method for making a magnetic data storage target includes warm-rolling a magnetic alloy sheet at a temperature of less than about 1200° F., optimally followed by annealing. The method results in increased pass-through-flux (PTF) and improved performance in magnetron sputtering applications.