Abstract: Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group Ill nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

Abstract: A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer. The semiconductor structure is built upon a silicon carbide substrate.

Abstract: An internal combustion engine may include a hydraulic linkage used to transfer motion from a valve train element, such as a cam, to an engine valve. Method and apparatus for selectively limiting the motion transferred by the hydraulic linkage from the valve train element to the engine valve are disclosed. The motion transferred by the hydraulic linkage may be limited by a means for resetting or clipping that is integrated into the rocker arm/shaft assembly provided in the valve train.

Abstract: An internal combustion engine may include a hydraulic linkage used to transfer motion from a valve train element, such as a cam, to an engine valve. Method and apparatus for selectively limiting the motion transferred by the hydraulic linkage from the valve train element to the engine valve are disclosed. The motion transferred by the hydraulic linkage may be limited by a means for resetting or clipping that is integrated into the rocker arm/shaft assembly provided in the valve train.

Abstract: The present invention relates to engineering attenuated viruses by altering a non-coding region or the coding sequence of a viral gene. Alterations of the non-coding regions which regulate transcription and/or replication are described. These alterations result in the down-regulation of the viral gene and an attenuation of the virus, either by the production of defective particles during replication, or by reducing the number of progeny virions produced during viral replication. Alterations of viral coding sequences are also described which result in a recombinant or chimeric attenuated virus.

Abstract: A mop head for washing or wiping floors is adapted to fit on a mop holder having two plastic flaps which can be folded back upon each other, whereby the mop head includes securing members for securing it to one end of one flap of the mop holder, with the mop head further including a fabric layer having a pouch on one short side, and a strap on the other short side, whereby the strap can be tightly stretched on the one flap end via the securing members.

Abstract: A sensor for measuring the activity of ions by means of ion-selective membranes (4) improves the measuring possibilities and reduces the dimensions of the sensor in that a plurality of such membranes are held in a common carrier (3) and are electrically insulated and protected against the penetration of moisture. Shunts (2) are provided in a sensor body (1) of the carrier. The carrier and sensor body are connected to one another. The invention is also directed to a method for producing such a sensor. Moreover, the invention is concerned with sensors and a respective arrangement for hemodialysis.

Abstract: A device for dispensing a striped mixture of two components of a paste-like flowable substance includes a lower container in which one of the components is retained. A dosing unit mounted on the container, includes a pushbutton which is depressed for forcing the first component from the container through a set of valves into a compartment of the dosing unit, through a centrally located tubular element within the compartment, and out of an upper outlet for dispensement from the device. The interior of the compartment between the tubular element is filled with a second component, which is forced upward by the first component entering the compartment, and into the tubular element via openings therethrough, for mixing with the first component as it moves through the tubular element and out of the outlet, for dispensing a striped mixture of the first and second components.