Patents by Inventor Michael C. Johnson

Michael C. Johnson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12272757
    Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.
    Type: Grant
    Filed: February 6, 2024
    Date of Patent: April 8, 2025
    Assignee: Maxeon Solar Pte. Ltd.
    Inventors: Yu-Chen Shen, Perine Jaffrenou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
  • Publication number: 20240290894
    Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.
    Type: Application
    Filed: February 6, 2024
    Publication date: August 29, 2024
    Inventors: Yu-Chen Shen, Perine Jaffrenou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
  • Patent number: 12009441
    Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.
    Type: Grant
    Filed: January 20, 2023
    Date of Patent: June 11, 2024
    Assignee: Maxeon Solar Pte. Ltd.
    Inventors: Seung Bum Rim, Michael C. Johnson
  • Patent number: 12009449
    Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
    Type: Grant
    Filed: February 9, 2023
    Date of Patent: June 11, 2024
    Assignee: Maxeon Solar Pte. Ltd.
    Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
  • Patent number: 11755414
    Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.
    Type: Grant
    Filed: November 11, 2022
    Date of Patent: September 12, 2023
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Roopesh Battepati, Michael C. Johnson, Manoj Kadam, Raymond Wang, Ganesh Prasad, Ziquan Zhu
  • Publication number: 20230197877
    Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
    Type: Application
    Filed: February 9, 2023
    Publication date: June 22, 2023
    Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
  • Publication number: 20230155039
    Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.
    Type: Application
    Filed: January 20, 2023
    Publication date: May 18, 2023
    Inventors: SEUNG BUM RIM, MICHAEL C. JOHNSON
  • Patent number: 11605750
    Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: March 14, 2023
    Assignee: SunPower Corporation
    Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
  • Publication number: 20230071311
    Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.
    Type: Application
    Filed: November 11, 2022
    Publication date: March 9, 2023
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Roopesh BATTEPATI, Michael C. JOHNSON, Manoj KADAM, Raymond WANG, Ganesh PRASAD, Ziquan ZHU
  • Patent number: 11594648
    Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.
    Type: Grant
    Filed: April 20, 2020
    Date of Patent: February 28, 2023
    Assignee: SunPower Corporation
    Inventors: Seung Bum Rim, Michael C. Johnson
  • Patent number: 11526399
    Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.
    Type: Grant
    Filed: August 24, 2021
    Date of Patent: December 13, 2022
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Roopesh Battepati, Michael C. Johnson, Manoj Kadam, Raymond Wang, Ganesh Prasad, Ziquan Zhu
  • Publication number: 20220293801
    Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.
    Type: Application
    Filed: May 31, 2022
    Publication date: September 15, 2022
    Inventors: Yu-Chen Shen, Perine Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
  • Patent number: 11374145
    Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: June 28, 2022
    Assignees: SunPower Corporation, Total Marketing Services
    Inventors: Yu-Chen Shen, Périne Jaffrennou, Gilles Olav Tanguy Sylvain Poulain, Michael C. Johnson, Seung Bum Rim
  • Publication number: 20210390019
    Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.
    Type: Application
    Filed: August 24, 2021
    Publication date: December 16, 2021
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Roopesh Battepati, Michael C. Johnson, Manoj Kadam, Raymond Wang, Ganesh Prasad, Ziquan Zhu
  • Patent number: 11144397
    Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: October 12, 2021
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Roopesh Battepati, Michael C. Johnson, Manoj Kadam, Raymond Wang, Ganesh Prasad, Ziquan Zhu
  • Publication number: 20210249551
    Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
    Type: Application
    Filed: February 23, 2021
    Publication date: August 12, 2021
    Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
  • Patent number: 10957809
    Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: March 23, 2021
    Assignee: SunPower Corporation
    Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
  • Patent number: 10840395
    Abstract: Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.
    Type: Grant
    Filed: June 7, 2018
    Date of Patent: November 17, 2020
    Assignee: SunPower Corporation
    Inventors: Michael C. Johnson, Taiqing Qiu, David D. Smith, Peter John Cousins, Staffan Westerberg
  • Patent number: 10804843
    Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: October 13, 2020
    Assignee: SunPower Corporation
    Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
  • Publication number: 20200251601
    Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.
    Type: Application
    Filed: April 20, 2020
    Publication date: August 6, 2020
    Inventors: Seung Bum Rim, Michael C. Johnson