Abstract: A monitoring system including one or more processors communicatively connected with a memory, one or more output interfaces, one or more connectivity interfaces and one or more sensors, is attached to a clothing frame. The one or more sensors sense one or more indicators of a status of a clothing item attached to the clothing frame, the one or more sensors attached to the clothing frame and connected to one or more processors, one or more output interfaces, and one or more connectivity interfaces. The monitoring system determines the status information for the clothing item based on the one or more indicators. The monitoring system selectively adjusts an output interface to display the status information. The monitoring system communicates the status information to one or more additional clothing frames via the one or more connectivity interfaces.

Abstract: Methods of fabricating a solar cell, and resulting solar cell are described. In an example, the method for fabricating a solar cell include forming an oxide region over a light receiving region of a silicon substrate. The method can include forming an interfacial region over the light receiving surface of the silicon substrate. The method can also include forming a first surface region comprising aluminum oxide over the interfacial region and forming a second surface region over the first surface region. In some embodiments, the first surface region can have a thickness greater than the second surface region. In one embodiment, the second surface region can have a thickness greater than the thickness of the first surface region.

Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

Abstract: A computer receives information detailing the wardrobe of the user, including apparel and accessories, stored in a wardrobe database. The computer receives the schedule of the user and searches the schedule for keywords associated with dress codes and locational information in order to identify the dress code and locations of scheduled events. The computer cross references the determined dress code and weather conditions with suitable clothing in the wardrobe of the user then sends a signal to receivers in the wardrobe to indicate to the user which articles of clothing are appropriate for the weather and occasions of a particular day.

Abstract: Solar cells having epitaxial passivation layers are described. In an example, a solar cell includes a crystalline substrate. An epitaxial passivation layer is disposed directly on the crystalline substrate. A plurality of alternating N-type and P-type emitter regions is disposed on the epitaxial passivation layer.

Abstract: Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

Abstract: Methods of fabricating solar cells having passivation layers, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a first surface and a second surface. A plurality of emitter regions is disposed on the first surface of the substrate and spaced apart from one another. An amorphous silicon passivation layer is disposed on each of the plurality of emitter regions and between each of the plurality of emitter regions, directly on an exposed portion of the first surface of the substrate.

Abstract: An air compression system and method for an air separation plant in which air is compressed in a series of compression stages and a temperature swing adsorption unit adsorbs water vapor and carbon dioxide. The temperature swing adsorption unit is situated at a location of the compression stages such that air pressure upon entry into the adsorbent beds is between about 400 psia and about 600 psia. Each of the adsorbent beds of the unit have a minimum transverse cross-sectional flow area that will set the air velocity of the air to a level below that at which adsorbent bed fluidization would occur. Such operation allows fabrication costs of the adsorbent beds to be reduced because less adsorbent and smaller adsorbent beds are required while power consumption will be at a minimum.

Abstract: An approach to manufacturing an elliptical semiconductor wafer includes a structure for an elliptical semiconductor wafer with a crystal direction, wherein the crystal direction is provided by a seed crystal orientation. The structure of the elliptical semiconductor wafer has a minor radius for the elliptical semiconductor wafer and a major radius for the elliptical semiconductor wafer wherein the major radius is greater than the minor radius.

Abstract: Examples of the present disclosure describe implementing bitmap-based data replication when a primary form of data replication between a source device and a target device cannot be used. According to one example, a temporal identifier may be received from the target device. If the source device determines that the primary replication method is unable to be used to replicate data associated with the temporal identifier, a secondary replication method may be initiated. The secondary replication method may utilize a recovery bitmap identifying data blocks that have changed on the source device since a previous event.

Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Abstract: Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

Abstract: Methods of passivating light-receiving surfaces of solar cells with high energy gap (Eg) materials, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A Group III-nitride material layer is disposed above the passivating dielectric layer. In another example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A large direct band gap material layer is disposed above the passivating dielectric layer, the large direct band gap material layer having an energy gap (Eg) of at least approximately 3.3. An anti-reflective coating (ARC) layer disposed on the large direct band gap material layer, the ARC layer comprising a material different from the large direct band gap material layer.

Abstract: Methods of passivating light-receiving surfaces of solar cells with crystalline silicon, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. One or both of the intrinsic silicon layer and the N-type silicon layer is a micro- or poly-crystalline silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type micro- or poly-crystalline silicon layer disposed on the passivating dielectric layer.

Abstract: Apparatus and methods incorporate magnetocaloric materials in integrated circuit chip-carrier structures for electronic packages. An integrated circuit chip is electrically connected to a substrate. A thermostabilization unit is physically connected to the integrated circuit chip and the substrate. The thermostabilization unit comprises a temperature detector and magnetocaloric material on the integrated circuit chip. The integrated circuit structure includes a magnetic field generator operatively connected to the temperature detector. The magnetic field generator generates a magnetic field of variable intensity responsive to changes in temperature detected by the temperature detector.

Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Abstract: A decision based learning apparatus can include a decision module configured to implement a decision model associated with a problem, the decision model including a plurality of decisions associated with solving the problem, a problem profile module configured to store a problem profile, the problem profile defining the problem and a solution to the problem, a learning storage module configured to store at least one learning module associated with at least one of the plurality of decisions, and a decision scenario interface module configured to generate a scenario based on the decision model and the problem profile and to present the scenario based on the decision model and the problem profile to a user.

Abstract: An air compression system and method for an air separation plant in which air is compressed in a series of compression stages and a temperature swing adsorption unit adsorbs water vapor and carbon dioxide. The temperature swing adsorption unit is situated at a location of the compression stages such that air pressure upon entry into the adsorbent beds is between about 400 psia and about 600 psia. Each of the adsorbent beds of the unit have a minimum transverse cross-sectional flow area that will set the air velocity of the air to a level below that at which adsorbent bed fluidization would occur. Such operation allows fabrication costs of the adsorbent beds to be reduced because less adsorbent and smaller adsorbent beds are required while power consumption will be at a minimum.

Abstract: Methods of passivating light-receiving surfaces of solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. A non-conductive anti-reflective coating (ARC) layer is disposed on the N-type silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A tunneling dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the tunneling dielectric layer. A non-conductive anti-reflective coating (ARC) layer is disposed on the N-type silicon layer.

Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.