Abstract: Processes for localized film deposition on semiconductor device surfaces having non-planar features. The processes use combinations of Limited-Dose Atomic Layer Etch, Limited Dose Atomic Layer Deposition, and Atomic Layer Deposition to provide localized coatings only near or on the bottom, or only near the center, or only near or on the top and bottom of trench and Fin features.

Abstract: Processes for localized film deposition on semiconductor device surfaces having non-planar features. The processes use combinations of Limited-Dose Atomic Layer Etch, Limited Dose Atomic Layer Deposition, and Atomic Layer Deposition to provide localized coatings only near or on the bottom, or only near the center, or only near or on the top and bottom of trench and Fin features.

Abstract: A non-contact apparatus and method for measuring of the leakage current and capacitance of p-n junctions in test structures within scribe lanes of IC product wafers is disclosed. The apparatus comprises of a light source optically coupled with a fiber to a transparent electrode at the end of the fiber, which is brought close to the p-n junction under test. The ac signal generated from the test p-n junction is captured by this transparent and conducting coating electrode. The leakage current of a test p-n junction is determined using the frequency dependence of junction photo-voltage signal and reference signals from a p-n junction with low leakage current and known capacitance.

Abstract: A non-contact apparatus and method for measuring of the leakage current and capacitance of p-n junctions in test structures within scribe lanes of IC product wafers is disclosed. The apparatus has a light source optically coupled with a fiber to a transparent electrode at the end of the fiber, which is brought close to the p-n junction under test. The ac signal generated from the test p-n junction is captured by this transparent and conducting coating electrode. The leakage current of a test p-n junction is determined using the frequency dependence of junction photo-voltage signal and reference signals from a p-n junction with low leakage current and known capacitance.

Abstract: A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of a surface p-n junction and its leakage current is disclosed. The apparatus comprises an alternating light source optically coupled with a transparent and conducting electrode brought close to the junction, a second electrode placed outside of the illumination area, and a third grounded electrode surrounding the first and second electrodes. For measurements of junction capacitance, a calibration wafer with known sheet resistance is used to provide reference photovoltage signals. Using the measurement of the junction photovoltage (JPV) signals from the illuminated area and outside this area for calibration and test wafers at different light modulation frequencies, p-n junction sheet resistance and conductance (leakage current density) are determined.

Abstract: An implantation process in which a first dose of ions is implanted to produce a damaged layer through which a second dose of implant ions is directed. The damaged layer scatters the ions in the second dose so that these latter ions need not be directed at an angle to avoid channeling. The second dose is generally significantly higher than the first so that the resulting doping profile is produced primarily by the second dose, which can be directed perpendicular to the surface of the wafer.

Abstract: A method for detecting particles in an ion implantation characterized by the steps of placing a particle sensor within the vacuum chamber of the ion implantation machine, exposing the substrate to an ion beam, thereby dislodging a stream of free particles, and detecting a portion of the free particle sensor. The particle sensor is preferably shielded from radiation to prevent false readings, and is positioned substantially along the plane of rotation of a substrate support wheel. By positioning the particle counter both along the plane of rotation and tangential to the rotation of the wheel at the point of ion impact, the particle counter intercepts the particle stream at the point of maximum particle flux. The apparatus includes a laser beam, a photodetector responsive to a portion of the laser beam scattered off of particles in the particle stream and a lead shield to shield the photodetector from x-rays generated within the vacuum chamber of the ion implantation machine.