Abstract: Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In particular, a two-phase material can form based on the rutile phase of titanium oxide along with a spinel structure of ZnAl2O4. This material can have a dielectric constant below 15 which is simultaneously temperature stable.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave that includes a temperature compensation layer in thermal communication with a piezoelectric layer. The temperature compensation layer includes a silicon oxide composite that includes silicon oxide and a stiffening agent. The temperature compensation layer can have a positive temperature coefficient of variation. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

Abstract: Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In one aspect, a low loss dielectric material includes one or more transition metal oxides based on the (Zn, Ni, Co)O—Al2O3—TiO2 system comprising an aluminate comprising one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure. The low loss dielectric material additionally comprises one or more of: a titanate comprising the one of Co or Ni crystallized in a spinel structure, an aluminum oxide crystallized in a corundum structure and a titanium oxide crystallized in a rutile structure.

Abstract: Acoustic wave devices, including bulk and surface acoustic wave devices, include a temperature compensation layer in thermal communication with a piezoelectric layer. The temperature compensation layer includes a metal having a positive temperature coefficient of elasticity.

Abstract: An acoustic wave system includes a multi-layer piezoelectric substrate including a support substrate, a piezoelectric layer, and an intermediate structure between the support substrate and the piezoelectric layer. The intermediate structure can include a first dielectric material in a first region, and the first dielectric material and a second dielectric material can be included in a second region. A first resonator is in the first region, and a second resonator is in the second region.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and a multi-layer interdigital transducer electrode disposed on the piezoelectric substrate. The multi-layer interdigital transducer electrode includes a first electrode layer and a second electrode layer. The second electrode layer is disposed between the piezoelectric substrate and the first electrode layer. The first electrode layer has a higher density than a density of the second electrode layer. The second electrode layer has a higher conductivity than a conductivity of the first electrode layer. Related radio frequency modules and wireless communication devices are also provided.

Abstract: An acoustic wave device comprising a resonator and a capacitor electrically coupled to the resonator, the capacitor including a first conductive layer, a second conductive layer, and a dielectric material between the first conductive layer and the second conductive layer. The dielectric material has a negative temperature coefficient of permittivity.

Abstract: Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In particular, a two-phase material can form based on the rutile phase of titanium oxide along with a spinel structure of ZnAl2O4. This material can have a dielectric constant below 15 which is simultaneously temperature stable.

Abstract: Aspects and embodiments disclosed herein include a bulk acoustic wave (BAW) device comprising a first electrode and a second electrode, at least one of the first electrode and the second electrode including at least one of a binary intermetallic compound, a metal nitride, a metal carbide, a metal carbonitride, a metal boride, a MXene, a MAX phase, or a MAB phase, and a piezoelectric material layer positioned between the first electrode and the second electrode.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In one aspect, a low loss dielectric material includes one or more transition metal oxides based on the (Zn, Ni, Co)O—Al2O3—TiO2 system comprising an aluminate comprising one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure. The low loss dielectric material additionally comprises one or more of: a titanate comprising the one of Co or Ni crystallized in a spinel structure, an aluminum oxide and a titanium oxide crystallized in a rutile structure.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a substrate, an interdigital transducer electrode disposed on the substrate, and a temperature compensation layer over the interdigital transducer electrode. The IDT electrode includes a lower layer, an upper layer, and a buffer layer disposed between the lower layer and the upper layer. A modulus of elasticity of the buffer layer is less than a modulus of elasticity of the upper layer. The buffer layer is configured to release stress between the lower layer and the upper layer caused due to a difference between a coefficient of thermal expansion of the lower layer and a coefficient of thermal expansion of the upper layer.

Abstract: Disclosed herein are embodiments of n and p-type components with high temperature refractory material having a perovskite crystal structure. The material may be doped to generate, for example, p-type and n-type sensor legs. In some embodiments, expensive materials may be avoided. Further, the disclosed materials can avoid high temperature reaction between n-type components and p-type components.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: A temperature compensated surface acoustic wave device is disclosed. The temperature compensated surface acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a first layer, a second layer over the first layer, and a buffer layer between the first layer and the second layer. A thermal conductivity of the second layer is greater than a thermal conductivity of the buffer layer. The buffer layer can be a titanium layer. A thickness of the buffer layer can be in a range of 20 nm to 200 nm, or in a range of 5% to 30% of a thickness of the interdigital transducer electrode.

Abstract: Aspects and embodiments disclosed herein include a surface acoustic wave device comprising a support substrate, a first functional layer having a positive temperature coefficient of frequency disposed above an upper surface of the support substrate, a second functional layer having a negative temperature coefficient of frequency disposed on an upper surface of the first functional layer, a layer of piezoelectric material disposed on an upper surface of the second functional layer, and interdigital transducer (IDT) electrodes including interdigitated electrode fingers disposed on a surface of the piezoelectric material layer, the IDT electrodes including a metal with a density greater than aluminum.

Abstract: Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, interdigital transducer (IDT) electrodes disposed on the substrate and configured to generate an acoustic wave in response to an electrical signal, the IDT electrodes including copper (Cu) and at least one of nickel (Ni) and beryllium (Be), and a passivation layer disposed on the substrate and the IDT electrodes.

Abstract: Disclosed is piezoelectric material formed of aluminum nitride (AlN) doped with one or more of zinc (Zn), silicon (Si), lithium (Li), calcium (Ca) and/or oxygen (O) and an acoustic wave resonator including same.

Abstract: Disclosed herein are ceramic materials, such as bismuth substituted garnets, which can have high curie temperatures and high dielectric constants. In certain implementations, indium can be incorporated into the ceramic to improve certain properties and to avoid calcium compensation. The ceramic materials disclosed herein can be particular advantageous for below resonance applications.

Abstract: The present disclosure relates to a portable display system, products which can be easily carried to display booth, quickly hand assembled and disassembled without tools, and repackaged for easy transportation on the return trip. In an embodiment, the system includes one or more of a signage stand, shelving, a podium, or even a wall. Each of these items are light weight and conveniently packaged in flat carry containers, and come with parts and pieces and assembly instructions for easily assembling and disassembling the items step-by-step. In another embodiment, the system includes flat parts and pieces that can be assembled together. Each part or piece includes at least one extending tab or slot which is configured to mate with one or more corresponding slots or extending tabs in another part or piece, such that the parts or pieces, when fully assembled form a finished article, such as a signage stand, shelving, a podium, or a wall.