Abstract: Disclosed herein are embodiments of composite hexagonal ferrite materials formed from a combination of Y phase and Z phase hexagonal ferrite materials. Advantageously, embodiments of the material can have a high resonant frequency as well as a high permeability. In some embodiments, the materials can be useful for magnetodielectric antennas.

Abstract: Disclosed herein are embodiments of low temperature co-fireable barium tungstate materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the material can include flux, such as bismuth vanadate, to reduce co-firing temperatures.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and a multi-layer interdigital transducer electrode disposed on the piezoelectric substrate. The multi-layer interdigital transducer electrode includes a first electrode layer and a second electrode layer. The second electrode layer is disposed between the piezoelectric substrate and the first electrode layer. The first electrode layer has a higher density than a density of the second electrode layer. The second electrode layer has a higher conductivity than a conductivity of the first electrode layer. Related radio frequency modules and wireless communication devices are also provided.

Abstract: Disclosed herein are embodiments of low temperature co-fireable scheelite materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. In some embodiments, the scheelite material can include aluminum oxide for temperature expansion regulation.

Abstract: Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material and methods of manufacturing. The hexagonal ferrite material can be Y-phase strontium hexagonal ferrite material. In some embodiments, sodium can be added into the crystal structure of the hexagonal ferrite material in order to achieve high resonance frequencies while maintaining high permeability.

Abstract: Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of gadolinium can be added into specific sites in the crystal structure of the synthetic garnet by incorporating indium, a trivalent element. By including both indium and increased amounts of gadolinium, the dielectric constant can be improved. Thus, embodiments of the disclosed material can be advantageous in both above and below resonance applications, such as for isolators and circulators.

Abstract: A acoustic wave resonator comprises a piezoelectric substrate and a plurality of interdigital transducer (IDT) electrodes disposed on the piezoelectric substrate, the plurality of IDT electrodes formed of a mixture of tungsten and chromium to provide for reduction in size and increase in quality factor of the acoustic wave resonator.

Abstract: Embodiments of synthetic garnet materials having advantageous properties, especially for below resonance frequency applications, are disclosed herein. In particular, embodiments of the synthetic garnet materials can have high Curie temperatures and dielectric constants while maintaining low magnetization. These materials can be incorporated into isolators and circulators, such as for use in telecommunication base stations.

Abstract: Disclosed is an acoustic wave resonator comprising a substrate material formed of aluminum nitride (AlN) doped with one or more of beryllium (Be), strontium (Sr), and sodium (Na) to enhance performance of the acoustic wave resonator.

Abstract: Disclosed are embodiments of making a barium magnesium tantalate. The method can include providing barium magnesium tantalate and incorporating one of Ba2MgWO6, Ba8LiTa5WO24, Ba8LiTa5WO24, Ba2MgWO6, Ba3LaTa3O12, Ba8LiTa5WO24, BaLaLiWO6, Ba4Ta2WO12, Ba2La2MgW2O12, BaLaLiWO6, Sr3LaTa3O12, and SrLaTaO12 into the barium magnesium tantalate to form a solid solution having a high Q value.

Abstract: Disclosed herein are ceramic materials, such as bismuth substituted garnets, which can have high curie temperatures and high dielectric constants. In certain implementations, indium can be incorporated into the ceramic to improve certain properties and to avoid calcium compensation. The ceramic materials disclosed herein can be particular advantageous for below resonance applications.

Abstract: Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

Abstract: Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In one aspect, a low loss dielectric material includes one or more transition metal oxides based on the (Zn, Ni, Co)O—Al2O3—TiO2 system comprising an aluminate comprising one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure. The low loss dielectric material additionally comprises one or more of: a titanate comprising the one of Co or Ni crystallized in a spinel structure, an aluminum oxide and a titanium oxide crystallized in a rutile structure.

Abstract: Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of gadolinium can be added into specific sites in the crystal structure of the synthetic garnet by incorporating indium, a trivalent element. By including both indium and increased amounts of gadolinium, the dielectric constant can be improved. Thus, embodiments of the disclosed material can be advantageous in both above and below resonance applications, such as for isolators and circulators.

Abstract: Disclosed herein are embodiments of materials having high thermal conductivity along with a high dielectric constants. In some embodiments, a two phase composite ceramic material can be formed having a contiguous aluminum oxide phase with a secondary phase embedded within the continuous phase. Example secondary phases include calcium titanate, strontium titanate, or titanium dioxide.

Abstract: An acoustic wave device comprises a piezoelectric material and a second material disposed on the piezoelectric material and having a temperature coefficient of frequency of a sign opposite a sign of a temperature coefficient of frequency of the piezoelectric material, the second material including one or more of Si1-x-yTixPyO2-zFz (x,y,z<0.1), Si1-x-yGexPyO2-zFz, Si1-x-yBxPyO2-zFz (x=y<0.04), Si1-3xZnxP2xO2-yFy, Si1-xPxO2-yFy, Si1-2yGaxPxO4, Si1-2yGay-xBxPyO4, Si1-2yGay-xBxPyO4-zFz, TiNb10O29, Si1-xTixO2-yFy, Si1-x-yTixPyO2, Si1-xBxO2-yFy, Si1-x-yBxPyO2, GeO2, GeO2-yFy, Si1-xGexO2, Si1-xGexO2-yFy, Si1-x-yGexPyO2, ZnP2O6, Si1-3xZnxP2xO2, Ge1-3xZnxP2xO2, TeOx, Si1-xTexO2+y, Ge1-xTexO2+y, Si1-3x-yGeyZnxP2xO2, Si1-xPxO2-xNx, Si—O—C, Si1-2yAlxPxO4, or BeF2.

Abstract: An integrated microstrip circulator comprises a dielectric substrate having an aperture, a ferrite disc secured within the aperture in the dielectric substrate, metallization on upper surfaces of the dielectric substrate and the ferrite disc, and surface mount contacts disposed on lower surfaces of the dielectric substrate and the ferrite disc and in electrical communication with the metallization on the upper surfaces of the dielectric substrate and the ferrite disc.

Abstract: Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba3NiTa2O9 and incorporating one of Ba2MgWO6, Ba8LiTa5WO24, Ba8LiTa5WO24, Ba2MgWO6, Ba3LaTa3O12, Ba8LiTa5WO24, BaLaLiWO6, Ba4Ta2WO12, Ba2La2MgW2O12, BaLaLiWO6, Sr3LaTa3O12, and SrLaTaO12 into the Ba3NiTa2O9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.

Abstract: Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba3CoTa2O9 and incorporating one of Ba2MgWO6, Ba8LiTa5WO24, Ba8LiTa5WO24, Ba2MgWO6, Ba3LaTa3O12, Ba8LiTa5WO24, BaLaLiWO6, Ba4Ta2WO12, Ba2La2MgW2O12, BaLaLiWO6, Sr3LaTa3O12, and SrLaTaO12 into the Ba3CoTa2O9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.

Abstract: Disclosed are embodiments of high Q modified materials. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.