Abstract: In one embodiment, a memory interface comprises a cleanup phase-locked loop (PLL) configured to receive a reference clock signal, and to generate a clean clock signal based on the reference clock signal. The memory interface also comprises a synchronization circuit configured to receive data, a data clock signal, and the clean clock signal, wherein the synchronization circuit is further configured to sample the data using the data clock signal, and to synchronize the sampled data with the clean clock signal.

Abstract: A memory structure is described. In one embodiment, the memory structure comprises a memory controller configured to receive a clock signal and to be coupled to a plurality of memory modules via a single address/control bus. The memory controller couples to each of the plurality of memory modules via a separate chip select signal for each memory module. The memory controller issues commands across the address/control bus to the memory modules in an interleaved fashion in accordance with the timing supplied by the clock. During a waiting period after issuance of a command to one memory module, the memory controller can issue commands to a different memory module.

Abstract: A memory structure is described. In one embodiment, the memory structure comprises a memory controller configured to receive a clock signal and to be coupled to a plurality of memory modules via a single address/control bus. The memory controller couples to each of the plurality of memory modules via a separate chip select signal for each memory module. The memory controller issues commands across the address/control bus to the memory modules in an interleaved fashion in accordance with the timing supplied by the clock. During a waiting period after issuance of a command to one memory module, the memory controller can issue commands to a different memory module.

Abstract: Methods and apparatus for implementing a Dynamic Voltage Scaling (DVS) system are presented herein. In one embodiment, an embedded delay checker (EDC) cell is used to measure the actual activity and delay of a critical path within a microprocessor core, which is the basis for dynamically altering the voltage to the core. In another embodiment, a slaved ring oscillator (SRO) cell is placed adjacent to the microprocessor core and is used along with EDC cells to provide redundancy to a DVS system.

Abstract: Methods and apparatus for implementing a Dynamic Voltage Scaling (DVS) system are presented herein. In one embodiment, an embedded delay checker (EDC) cell is used to measure the actual activity and delay of a critical path within a microprocessor core, which is the basis for dynamically altering the voltage to the core. In another embodiment, a slaved ring oscillator (SRO) cell is placed adjacent to the microprocessor core and is used along with EDC cells to provide redundancy to a DVS system.