Abstract: Disclosed herein are systems and methods for displays, such as for a head wearable device. An example display can include an infrared illumination layer, the infrared illumination layer including a substrate, one or more LEDs disposed on a first surface of the substrate, and a first encapsulation layer disposed on the first surface of the substrate, where the encapsulation layer can include a nano-patterned surface. In some examples, the nano-patterned surface can be configured to improve a visible light transmittance of the illumination layer. In one or more examples, embodiments disclosed herein may provide a robust illumination layer that can reduce the haze associated with an illumination layer.

Abstract: Embodiments herein relate to water in fuel sensing systems that can be mounted on-vehicle. In an embodiment, a water in fuel sensing system is included having a light source, a light detector, and a sensor controller, wherein the sensor controller is in signal communication with the light detector and the sensor controller is configured to evaluate signals received from the light detector, identify water droplets based on the signals received from the light detector, record information regarding the classified water droplets, and generate an estimate of an amount of water in a fuel. Other embodiments are also included herein.

Abstract: In some implementations, a memory device may receive, from a host device, a program command. The memory device may determine that the program command is associated with a single level cell (SLC) program command. The memory device may determine a size of host data associated with the program command. The memory device may select a programming scheme, from multiple candidate programming schemes, to be used to write the host data to a memory based on the size of the host data and based on determining that the program command is associated with the SLC program command. The memory device may write the host data to the memory using the programming scheme.

Abstract: Memory devices are disclosed. A memory device may include hybrid cache including single-level cell (SLC) blocks of memory and non-SLC blocks of memory. The memory device may further include a memory controller configured to disable, based on workload of the hybrid cache, a portion of the hybrid cache such that writes are only directed to another, different portion of the cache. Associated methods and systems are also disclosed.

Abstract: An example method of performing memory access operations comprises: receiving a request to perform a memory access operation; identifying a block family associated with a set of memory cells; determining, for each logical programming level of a plurality of logical programming levels, a corresponding default block family error avoidance (BFEA) threshold voltage offset value associated with the block family; determining a value of a data state metric associated with the set of memory cells; determining, for each logical programming level of a plurality of logical programming levels, a corresponding sub-BFEA threshold voltage offset value; and performing the memory access operation by applying, for each logical programming level of the plurality of logical programming levels, a combination of the default BFEA threshold voltage value, the sub-BFEA threshold voltage value, and a corresponding base voltage level.

Abstract: Memory devices are disclosed. A memory device may include dynamic cache, static cache, and a memory controller. The memory controller may be configured to disable the static cache responsive to a number of program/erase (PE) cycles consumed by the static cache being greater than an endurance of the static cache. The memory controller may also be configured to disable the dynamic cache responsive to a number of PE cycles consumed by the dynamic cache being greater than an endurance of the dynamic cache. Associated methods and systems are also disclosed.

Abstract: An example method of performing memory access operations comprises: receiving a request to perform a memory access operation with respect to a set of memory cells connected to a wordline of a memory device; identifying a block family associated with the set of memory cells; determining, for each logical programming level of a plurality of logical programming levels, a corresponding default block family error avoidance (BFEA) threshold voltage offset value associated with the block family; determining a value of a data state metric associated with the set of memory cells; responsive to determining that the value of the data state metric satisfies a threshold criterion, determining, for each logical programming level of a plurality of logical programming levels, a corresponding sub-BFEA threshold voltage offset value; and performing the memory access operation by applying, for each logical programming level of the plurality of logical programming levels, a combination of the default BFEA threshold voltage value

Abstract: A configuration setting manager of a memory device receives a request to perform an adjustment operation on one or more configuration setting values of the memory device; calculate one or more updated configuration setting values by applying a multiplier value to the one or more configuration setting values based on a configuration adjustment definition associated with the one or more configuration setting values, wherein the multiplier value is associated with a number of memory operations performed on the memory device; and store the one or more updated configuration setting values to one or more corresponding configuration registers.

Abstract: A configuration setting manager of a memory device receives a request to perform an adjustment operation on a set of configuration setting values for the memory device, where each configuration setting value of the set of configuration setting values is stored in a corresponding configuration register of a set of configuration registers; determines a configuration adjustment definition associated with one or more configuration setting values of the set of configuration setting values; calculates an updated set of configuration setting values by applying a multiplier value to the configuration adjustment definition, wherein the multiplier value is associated with a number of programming operations performed on the memory device; and stores the updated set of configuration setting values in the corresponding configuration registers.

Abstract: A processing device detects a read operation at a memory device that is directed at a word line group from among multiple word line groups of the memory device. The processing device increments a read counter associated with the word line group based on the read operation being directed at the word line group. The processing device determines the read counter exceeds a read-disturb threshold and performs read-disturb handling on the word line group in response to determining the read counter exceeds the read-disturb threshold.

Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including initiating a read operation with respect to a block of the memory device, selecting, based on a set of criteria, a default read offset from a set of read offsets, wherein the set of criteria includes at least one of: a parameter related to trigger rate, or an amount of time that an open block is allowed to remain open to control threshold voltage shift due to storage charge loss, and applying the default read offset to a read operation performed with respect to the block.

Abstract: An example method of performing memory access operations comprises: receiving a request to perform a memory access operation with respect to a set of memory cells connected to a wordline of a memory device; identifying a block family associated with the set of memory cells; determining, for each logical programming level of a plurality of logical programming levels, a corresponding default block family error avoidance (BFEA) threshold voltage offset value associated with the block family; determining a value of a data state metric associated with the set of memory cells; responsive to determining that the value of the data state metric satisfies a threshold criterion, determining, for each logical programming level of a plurality of logical programming levels, a corresponding sub-BFEA threshold voltage offset value; and performing the memory access operation by applying, for each logical programming level of the plurality of logical programming levels, a combination of the default BFEA threshold voltage value

Abstract: The occurrence of an asynchronous power loss (APL) event is detected in a memory sub-system. In response, an APL handling operation is performed. The APL handing operation includes identifying a last written page at a first page location in a block of the memory device, wherein the last written page is associated with a memory cell of the memory device, copying data from the last written page and from a related page associated with the memory cell to a temporary storage area in the memory device, copying the data from the temporary storage area to a second page location in the block of the memory device, and providing a notification that the memory device has recovered from the APL event.

Abstract: Respective error handling (EH) flags can be set based at least in part on media management data of a memory device. Whether any of the EH flags are set can be determined. In response to determining that at least one of the EH flags is set, a subset of a plurality of operations of an EH flow associated with the set EH flags can be performed.

Abstract: Provided herein are methods of treating diabetic kidney disease comprising administering a therapeutically effective amount of atrasentan, or a pharmaceutically acceptable salt thereof, and a SGLT-2 inhibitor to a subject in need thereof.

Abstract: An asynchronous power loss (APL) event is detected at a memory device. A last written page is identified in the memory device in response to detecting the APL event. A count of zeros programmed in the last written page is determined. The count of zeros is compared to a threshold constraint to determine whether to perform a dummy write operation on the last written page.

Abstract: Apparatuses and methods for operating mixed mode blocks. One example method can include tracking single level cell (SLC) mode cycles and extra level cell (XLC) mode cycles performed on the mixed mode blocks, maintaining a mixed mode cycle count corresponding to the mixed mode blocks, and adjusting the mixed mode cycle count differently for mixed mode blocks operated in a SLC mode than for mixed blocks operated in a XLC mode.

Abstract: A method includes associating each block of a plurality of blocks of a memory device with a corresponding frequency access group of a plurality of frequency access groups based on corresponding access frequencies, and performing scan operations on blocks of each of the plurality of frequency access groups using a scan frequency that is different from scan frequencies of other frequency access groups. A scan operation performed on a frequency access group with a higher access frequency uses a higher scan frequency than a scan operation performed on a frequency access group with a lower access frequency.

Abstract: Several embodiments of memory devices and systems with offset memory component automatic calibration error recovery are disclosed herein. In one embodiment, a system includes at least one memory region and calibration circuitry. The memory region has memory cells that read out data states in response to application of a current read level signal. The calibration circuitry is operably coupled to the at least one memory region and is configured to determine a read level offset value corresponding to one or more of a plurality of offset read level test signals, including a base offset read level test signal. The base offset read level test signal is offset from the current read level signal by a predetermined value. The calibration circuitry is further configured to output the determined read level offset value.