Abstract: A method of fabricating a light emitting diode (LED) includes forming an active region structured to emit ultraviolet (UV) light and disposed between a first n-type semiconductor region and a first p-type semiconductor region. The method also includes forming a tunnel junction, where the first p-type semiconductor region is disposed between the active region and the tunnel junction, and where the tunnel junction is electrically coupled to inject charge carriers into the active region through the first p-type semiconductor region. A second n-type semiconductor region is also formed, where the tunnel junction is disposed between the second n-type semiconductor region and the first p-type semiconductor region.

Abstract: A light emitting diode (LED) to emit ultraviolet (UV) light includes a first n-type semiconductor region and a first p-type semiconductor region. The LED also includes an active region disposed between the first n-type semiconductor region and the first p-type semiconductor region, and in response to a bias applied across the light emitting diode, the active region emits UV light. A tunnel junction is disposed in the LED so the first p-type semiconductor region is disposed between the active region and the tunnel junction. The tunnel junction is electrically coupled to inject charge carriers into the active region through the first p-type semiconductor region. A second n-type semiconductor region is also disposed in the LED so the tunnel junction is disposed between the second n-type semiconductor region and the first p-type semiconductor region.

Abstract: Embodiments regard micro-size devices formed by etch of sacrificial epitaxial layers. An embodiment of a method includes forming a plurality of epitaxial layers on a sapphire crystal, wherein the epitaxial layers include a buffer layer on the sapphire crystal, a sacrificial layer above the buffer layer, and one or more device layers above the sacrificial layer; etching to singulate the semiconductor devices, the etching being through the one or more device layers and wholly or partially through the sacrificial layer; electrochemical etching of the sacrificial layer; and lift-off of one or more semiconductor devices from the buffer layer.

Abstract: Described herein are methods and systems for facilitating a wireless power handover. In particular, a controller may cause a first transmitter to provide electrical power to a receiver. The controller may then determine that a handover condition is met and may responsively facilitate a handover to a second transmitter. During this handover, the controller may engage in a phase-determination process to determine first and second phases at which the first and second transmitters should respectively provide electrical power to the receiver. Once determined, the controller may then cause the first and second transmitters to respectively provide electrical power to the receiver at the first and second phases and at substantially the same time. Subsequently, the controller may cause the first transmitter to no longer provide electrical power to the receiver and the second transmitter to continue to provide electrical power to the receiver, thereby completing the handover.

Abstract: A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type semiconductor layer. The N-type semiconductor layer is located on a first side of the active layer. One or more oxidizing layers are generated along with a P-type semiconductor layer generated on a second, opposite side of the active layer. The wafer is etched to expose a surface of each oxidizing layer. Oxidation of a first region of each oxidizing layer is allowed, where a second region of each oxidizing layer remains non-oxidized.

Abstract: An example method may include receiving, from a client computing device, an indication of a target drop-off spot for an object within a first virtual model of a first region of a delivery destination. A second virtual model of a second region of the delivery destination may be determined based on sensor data received from one or more sensors on a delivery vehicle. A mapping may be determined between physical features represented in the first virtual model and physical features represented in the second virtual model to determine an overlapping region between the first and second virtual models. A position of the target drop-off spot within the second virtual model may be determined based on the overlapping region. Based on the position of the target drop-off spot within the second virtual model, the delivery vehicle may be navigated to the target drop-off spot to drop off the object.

Abstract: A set of light emitting devices can be formed on a substrate A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second hand gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

Abstract: A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

Abstract: A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type semiconductor layer. The N-type semiconductor layer is located on a first side of the active layer. One or more oxidizing layers are generated along with a P-type semiconductor layer generated on a second, opposite side of the active layer. The wafer is etched to expose a surface of each oxidizing layer. Oxidation of a first region of each oxidizing layer is allowed, where a second region of each oxidizing layer remains non-oxidized.

Abstract: Techniques of providing illumination to a head-mounted display (HMD) involve providing off-board illumination apart from the HMD. An off-board illumination unit delivers the illumination to the HMD via optical fibers. The optical fibers are lightweight and do not restrict motion of a user. Because the power source is less restricted, the off-board illumination unit provides flexibility in the hardware used to generate the illumination. For example, the illumination unit may use red, green, and blue narrow-band diode lasers. Further, by controlling modes in the fiber and providing additional light-guiding hardware, the angles at which light strikes LCD pixels may be largely restricted to certain specified angles. Restricted angles of incidence enable the use of fast-switching liquid crystals without degrading the image quality. Such a restriction allows for high-resolution imaging using rapid switching of the liquid crystal which enables very low latencies.

Abstract: Embodiments regard a semiconductor device including an oxide current aperture. An embodiment of a semiconductor device includes an N-type semiconductor layer; an active region on the N-type semiconductor layer, the N-type semiconductor layer located on a first side of the active layer; a P-type semiconductor layer located on a second, opposite side of the active layer; and one or more oxide current apertures including a first oxide current apertures in close proximity to the active region, wherein each oxide current aperture includes a non-oxidized region surrounded by an oxidized region.

Abstract: Embodiments regard micro-size devices formed by etch of sacrificial epitaxial layers. An embodiment of a method includes forming a plurality of epitaxial layers on a sapphire crystal, wherein the epitaxial layers include a buffer layer on the sapphire crystal, a sacrificial layer above the buffer layer, and one or more device layers above the sacrificial layer; etching to singulate the semiconductor devices, the etching being through the one or more device layers and wholly or partially through the sacrificial layer; electrochemical etching of the sacrificial layer; and lift-off of one or more semiconductor devices from the buffer layer.

Abstract: A light emitting diode (LED) includes a semiconductor material with an active region. The active region is disposed in the semiconductor material to produce light in response to a voltage applied across the semiconductor material. The active region includes a wide bandgap region disposed to inhibit charge transfer from a central region of the LED to the lateral edges of the LED. The active region also includes a narrow bandgap region disposed in the central region with the wide bandgap region disposed about the narrow bandgap region, and the narrow bandgap region has a narrower bandgap than the wide bandgap region.

Abstract: An apparatus includes a p-type semiconductor material, an n-type semiconductor material, and an active region disposed between the p-type semiconductor material and the n-type semiconductor material. The active region emits light in response to a voltage applied across the active region, and the active region includes a quantum well region, a barrier region, and a capping region. The barrier region is disposed to confine charge carriers in the quantum well region. The capping region is disposed between the quantum well region and the barrier region, and the capping region is adjacent to the quantum well region to stabilize a material composition of the quantum well region. The quantum well region, the barrier region, and the capping region collectively form a first tri-layer structure.

Abstract: A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively, The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

Abstract: A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the in-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

Abstract: A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.

Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.