Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component-side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component-side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a trench over the MEMS plate, forming an oxide liner in the trench on sidewalls of the trench, forming a metal liner over the oxide liner in the trench, and depositing a metallic filler in the trench to form a via. The method further includes removing the polymer layer such that the via and the MEMS plate form the self-supported MEMS structure, where the oxide liner provides mechanical rigidity for the metallic filler of the via. An exemplary structure formed by the disclosed method is also disclosed.

Abstract: A light sensor having a chemically resistant and robust reflector stack is disclosed. The reflector stack is formed over a substrate, and includes an adhesion layer, a patterned reflector layer over the adhesion layer, and a smoothing layer over the patterned reflector layer. The patterned reflector layer has a substantially flat top surface. A conformal passivation layer covers the reflector stack. An absorbing layer is situated above the reflector stack and separated from the reflector stack. The absorbing layer is supported by vias over the substrate. The absorbing layer is connected to at least one resistor, where a resistance of the at least one resistor varies in response to light absorbed by the absorbing layer. The vias are disposed on via landing pads on the substrate.

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

Abstract: A light sensor having a chemically resistant and robust reflector stack is disclosed. The reflector stack is formed over a substrate, and includes an adhesion layer, a patterned reflector layer over the adhesion layer, and a smoothing layer over the patterned reflector layer. The patterned reflector layer has a substantially flat top surface. A conformal passivation layer covers the reflector stack. An absorbing layer is situated above the reflector stack and separated from the reflector stack. The absorbing layer is supported by vias over the substrate. The absorbing layer is connected to at least one resistor, where a resistance of the at least one resistor varies in response to light absorbed by the absorbing layer. The vias are disposed on via landing pads on the substrate.

Abstract: Disclosed is a MEMS device having lower, upper and release chambers with a similar pressure and/or a similar gaseous chemistry. The MEMS device includes a top MEMS plate and a bottom MEMS plate. The MEMS device also includes a lower chamber between the bottom MEMS plate and the top MEMS plate, and an upper chamber between the top MEMS plate and a first sealing layer. The MEMS device further includes a release chamber between the top MEMS plate and a second sealing layer, the release chamber allowing gaseous content of the upper and/or the lower chambers to be released. Also disclosed is a double release method for releasing gaseous content of the upper and/or the lower chambers.

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a trench over the MEMS plate, forming an oxide liner in the trench on sidewalls of the trench, forming a metal liner over the oxide liner in the trench, and depositing a metallic filler in the trench to form a via. The method further includes removing the polymer layer such that the via and the MEMS plate form the self-supported MEMS structure, where the oxide liner provides mechanical rigidity for the metallic filler of the via. An exemplary structure formed by the disclosed method is also disclosed.

Abstract: Disclosed is a MEMS device having lower and upper chambers with a similar pressure and/or a similar gaseous chemistry. The MEMS device includes a top MEMS plate and a bottom MEMS plate. The MEMS device also includes a lower chamber between the bottom MEMS plate and the top MEMS plate, and an upper chamber between the top MEMS plate and a sealing layer. The top MEMS plate includes at least one segment that is narrower than the bottom MEMS plate, thereby causing the lower and upper chambers to have a similar pressure and/or a similar gaseous chemistry. In another implementation, the top MEMS plate has at least one through-hole, thereby causing the lower and upper chambers to have a similar pressure and/or a similar gaseous chemistry.

Abstract: Disclosed is a MEMS device having lower, upper and release chambers with a similar pressure and/or a similar gaseous chemistry. The MEMS device includes a top MEMS plate and a bottom MEMS plate. The MEMS device also includes a lower chamber between the bottom MEMS plate and the top MEMS plate, and an upper chamber between the top MEMS plate and a first sealing layer. The MEMS device further includes a release chamber between the top MEMS plate and a second sealing layer, the release chamber allowing gaseous content of the upper and/or the lower chambers to be released. Also disclosed is a double release method for releasing gaseous content of the upper and/or the lower chambers.

Abstract: According to an embodiment disclosed herein, a microelectronic device to be encapsulated is built on, or alternatively in, a substrate. The device is then coated with a sacrificial layer. A lid layer is deposited over the sacrificial layer, and then appropriately perforated to optimize the removal of the sacrificial layer. The sacrificial layer is then removed using one of several etching or other processes. The perforations in the lid layer are then sealed using a viscous sealing material, thereby fixing the environment that encapsulates the device. The sealing material is then cured or hardened. An optional moisture barrier may be deposited over the cured sealing layer to provide further protection for the encapsulation if needed.

Abstract: According to an embodiment disclosed herein, a microelectronic device to be encapsulated is built on, or alternatively in, a substrate. The device is then coated with a sacrificial layer. A lid layer is deposited over the sacrificial layer, and then appropriately perforated to optimize the removal of the sacrificial layer. The sacrificial layer is then removed using one of several etching or other processes. The perforations in the lid layer are then sealed using a viscous sealing material, thereby fixing the environment that encapsulates the device. The sealing material is then cured or hardened. An optional moisture barrier may be deposited over the cured sealing layer to provide further protection for the encapsulation if needed.

Abstract: According to an embodiment disclosed herein, a microelectronic device to be encapsulated is built on, or alternatively in, a substrate. The device is then coated with a sacrificial layer. A lid layer is deposited over the sacrificial layer, and then appropriately perforated to optimize the removal of the sacrificial layer. The sacrificial layer is then removed using one of several etching or other processes. The perforations in the lid layer are then sealed using a viscous sealing material, thereby fixing the environment that encapsulates the device. The sealing material is then cured or hardened. An optional moisture barrier may be deposited over the cured sealing layer to provide further protection for the encapsulation if needed.

Abstract: A method of making an organic vertical cavity laser array device includes providing a substrate and a bottom dielectric stack reflective to light over a predetermined range of wavelengths and being disposed over the substrate; forming an etched region in the top surface of the bottom dielectric stack to define an array of spaced laser pixels which have higher reflectance than the interpixel regions so that the array emits laser light; and forming a planarization layer over the etched bottom dielectric stack. The method also includes forming an active region over the planarization layer for producing laser light; and forming a top dielectric stack spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths.

Abstract: A method of fabricating a liquid emission device includes a chamber having a nozzle orifice. Separately addressable dual electrodes are positioned on opposite sides of a central electrode. The three electrodes are aligned with the nozzle orifice. A rigid electrically insulating coupler connects the two addressable electrodes. To eject a drop, an electrostatic charge is applied to the addressable electrode nearest to the nozzle orifice, which pulls that electrode away from the orifice, drawing liquid into the expanding chamber. The other addressable electrode moves in conjunction, storing potential energy in the system. Subsequently the addressable electrode nearest to the nozzle is de-energized and the other addressable electrode is energized, causing the other electrode to be pulled toward the central electrode in conjunction with the release of the stored elastic potential energy.

Abstract: An inkjet print head comprises a mandrel having flat front and rear surfaces disposed between an initially curved rear membrane and an initially flat front membrane. The rear membrane is initially hemispherically curved, in close contact at its periphery with the rear surface of the mandrel but substantially removed from the mandrel in its central region. Because the membranes are mechanically coupled, the initially curved rear membrane causes the initially flat front membrane to bow away from the front surface of the mandrel. Ink contacts only one membrane, preferably the front membrane, which is typically held at a ground potential. By applying a voltage sequence to the membranes and mandrel, the position of the actuator may be controlled in a “push-pull” manner.

Abstract: A drop emission device includes a chamber having a nozzle orifice through which a drop of liquid can be emitted. A deformable electrode is associated with the chamber such that movement of the electrode in a first direction increases the chamber's volume and movement of the electrode in a second direction decreases the chamber's volume to emit a drop through the nozzle orifice. A fixed electrode opposes to the deformable electrode to define a second chamber there between such that control of relative voltage differences between the deformable and the fixed electrodes selectively moves the deformable electrode in the first or second directions. The variable volume is vented to a source of dielectric material through an opening in the fixed electrode. The ratio of the cross-sectional area of the opening to the perimeter of the opening is greater than 0.5 ?m, and is preferably about 5 ?m.

Abstract: A method of measuring absolute static pressure in a microfluidic device transporting a working fluid that is immiscible in a first selected gas environment, includes providing a first fluid conducting channel having an atmosphere provided by the first selected gas environment in a sealed environment and in communication with the microfluidic device at a first point of communication; providing a first sensing mechanism that is electrically interrogated, disposed adjacent to the first fluid conducting channel; and transporting the working fluid under pressure conducted by the microfluidic device into the first fluid conducting channel such that the volume transported into such first fluid conducting channel varies depending upon the absolute static pressure of the working fluid.

Abstract: An actuator is made by depositing an electrode layer on an initial layer. A patterned layer of sacrificial material is formed on the first electrode layer such that a region of the first electrode layer is exposed through the subsequent layer. A second electrode layer is deposited and patterned on the subsequent layer. Then, a third patterned layer of sacrificial material is formed on the second electrode layer with an opening there through to the exposed region of the first electrode layer. A structure is deposited, patterned and planarized on the third layer expose a surface of the third layer. A third electrode layer is deposited and patterned on the planarized structure and the exposed surface of the third layer. The sacrificial material is partially removed, whereby the first electrode layer, the structure, and the third electrode layer are free to move together relative to the second electrode layer.