Patents by Inventor Michael J. Mehl

Michael J. Mehl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low Temperature Plasma-Assisted Atomic Layer Epitaxy of Hexagonal InN Films and its Alloys with AlN
    Publication number: 20220406591
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal InN using a pulsed growth method at a temperature lower than 300° C.
    Type: Application
    Filed: August 3, 2022
    Publication date: December 22, 2022
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures
    Patent number: 11443942
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: September 13, 2022
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN
    Patent number: 10937649
    Abstract: Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1?xN, AlxGa1?xN, AlxIn1?xN, or AlxInyGa1?(x+y)N.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: March 2, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Indium Nitride Material
    Publication number: 20200294792
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Application
    Filed: June 1, 2020
    Publication date: September 17, 2020
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN Films and its alloys with AlN at Low Temperatures
    Publication number: 20180040472
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Application
    Filed: September 7, 2017
    Publication date: February 8, 2018
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures
    Patent number: 9773666
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: September 26, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Syed B Qadri, Michael J. Mehl
  • Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys with AlN and GaN
    Publication number: 20150140789
    Abstract: Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1?xN, AlxGa1?xN, AlxIn1?xN, or AlxInyGa1?(x+y)N
    Type: Application
    Filed: December 16, 2014
    Publication date: May 21, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and its alloys with AlN at Low Temperatures
    Publication number: 20130334666
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Application
    Filed: June 13, 2013
    Publication date: December 19, 2013
    Applicant: The Government of the United Stated of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl