Patents by Inventor Michael Konevecki
Michael Konevecki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110171815Abstract: A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.Type: ApplicationFiled: January 12, 2010Publication date: July 14, 2011Inventors: Natalie NGUYEN, Paul Wai Kie Poon, Steven J. Radigan, Michael Konevecki, Yung-Tin Chen, Raghuveer Makala, Vance Dunton
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Patent number: 7968277Abstract: A photolithographic method uses different exposure patterns. In one aspect, a photo-sensitive layer on a substrate is subject to a first exposure using optics having a first exposure pattern, such as an x-dipole pattern, followed by exposure using optics having a second exposure pattern, such as a y-dipole pattern, via the same mask, and with the photo-sensitive layer fixed relative to the mask. A 2-D post pattern with a pitch of approximately 70-150 nm may be formed in a layer beneath the photo-sensitive layer using 157-193 nm UV light, and hyper-numerical aperture optics, in one approach. In another aspect, hard baking is performed after both of the first and second exposures to erase a memory effect of photoresist after the first exposure. In another aspect, etching of a hard mask beneath the photo-sensitive layer is performed after both of the first and second exposures.Type: GrantFiled: June 8, 2010Date of Patent: June 28, 2011Assignee: SanDisk 3D LLCInventors: Yung-Tin Chen, Steven J. Radigan, Paul Poon, Michael Konevecki
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Publication number: 20110136326Abstract: A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer.Type: ApplicationFiled: February 14, 2011Publication date: June 9, 2011Applicant: SanDisk 3D LLCInventors: Vance DUNTON, S. Brad Herner, Paul Wai Kie Poon, Chuanbin Pan, Michael Chan, Michael Konevecki, Usha Raghuram
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Patent number: 7923305Abstract: A method of making a device includes forming a first sacrificial layer over an underlying layer, forming a first photoresist layer over the first sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, etching the first sacrificial layer using both the first and the second photoresist features as a mask to form first sacrificial features, forming a spacer layer over the first sacrificial features, etching the spacer layer to form spacer features and to expose the sacrificial features, removing the first sacrificial features, and etching at least part of the underlying layer using the spacer features as a mask.Type: GrantFiled: January 12, 2010Date of Patent: April 12, 2011Assignee: SanDisk 3D LLCInventors: Natalie Nguyen, Paul Wai Kie Poon, Steven J. Radigan, Michael Konevecki, Yung-Tin Chen
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Publication number: 20110065243Abstract: A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile memory array includes an array of semiconductor diodes, and each semiconductor diode of the array of semiconductor diodes is disposed substantially parallel to the substrate surface.Type: ApplicationFiled: November 18, 2010Publication date: March 17, 2011Applicant: SanDisk 3D LLCInventors: Steven Maxwell, Michael Konevecki, Mark H. Clark, Usha Raghuram
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Patent number: 7906392Abstract: A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer.Type: GrantFiled: January 15, 2008Date of Patent: March 15, 2011Assignee: SanDisk 3D LLCInventors: Vance Dunton, S. Brad Herner, Paul Wai Kie Poon, Chuanbin Pan, Michael Chan, Michael Konevecki, Usha Raghuram
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Patent number: 7846782Abstract: A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile memory array includes an array of semiconductor diodes, and each semiconductor diode of the array of semiconductor diodes is disposed substantially parallel to the substrate surface.Type: GrantFiled: September 28, 2007Date of Patent: December 7, 2010Assignee: SanDisk 3D LLCInventors: Steven Maxwell, Michael Konevecki, Mark H. Clark, Usha Raghuram
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Publication number: 20090278112Abstract: Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube (“CNT”) film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.Type: ApplicationFiled: April 10, 2009Publication date: November 12, 2009Applicant: SANDISK 3D LLCInventors: April D. Schricker, Andy Fu, Michael Konevecki, Steven Maxwell
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Publication number: 20090179310Abstract: A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer.Type: ApplicationFiled: January 15, 2008Publication date: July 16, 2009Inventors: Vance Dunton, S. Brad Herner, Paul Wai Kie Poon, Chuanbin Pan, Michael Chan, Michael Konevecki, Usha Raghuram
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Publication number: 20090085153Abstract: A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile memory array includes an array of semiconductor diodes, and each semiconductor diode of the array of semiconductor diodes is disposed substantially parallel to the substrate surface.Type: ApplicationFiled: September 28, 2007Publication date: April 2, 2009Inventors: Steven Maxwell, Michael Konevecki, Mark H. Clark, Usha Raghuram
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Publication number: 20070295690Abstract: A method of plasma etching transition metal oxide thin films using carbon monoxide as the primary source gas. This permits carbonyl chemistries to be used at ambient temperature, without heating.Type: ApplicationFiled: March 1, 2007Publication date: December 27, 2007Inventors: Usha Reghuram, Michael Konevecki
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Publication number: 20070010100Abstract: A method of plasma etching comprises using a primary etchant of carbon monoxide gas to etch a transition metal or transition metal compound and to form a volatile by-product of metal carbonyl.Type: ApplicationFiled: July 11, 2005Publication date: January 11, 2007Applicant: Matrix Semiconductor, Inc.Inventors: Usha Raghuram, Michael Konevecki
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Publication number: 20060183282Abstract: The present invention provides for a method to pattern and etch very small dimension pillars, for example in a memory array. When dimensions of pillars become very small, the photoresist pillars used to pattern them may not have sufficient mechanical strength to survive the photoresist exposure and development process. Using methods according to the present invention, these photoresist pillars are printed and developed larger than their intended final dimension, such that they have increased mechanical strength, then are shrunk to the desired dimension during a preliminary etch performed before the etch of underlying material begins.Type: ApplicationFiled: February 17, 2005Publication date: August 17, 2006Applicant: Matrix Semiconductor, Inc.Inventors: Usha Raghuram, Michael Konevecki
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Publication number: 20060071074Abstract: The invention provides for polysilicon vias connecting conductive polysilicon layers formed at different heights. Polysilicon vias are advantageously used in a monolithic three dimensional memory array of charge storage transistors. Polysilicon vias according to the present invention can be used, for example, to connect the channel layer of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells formed above the first device level. Similarly, vias according to the present invention can be used to connect the wordline of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells.Type: ApplicationFiled: September 29, 2004Publication date: April 6, 2006Applicant: Matrix Semiconductor, Inc.Inventors: Michael Konevecki, Usha Raghuram, Maitreyee Mahajani, Sucheta Nallamothu, Andrew Walker, Tanmay Kumar
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Publication number: 20060003586Abstract: A method for etching to form a planarized surface is disclosed. Spaced-apart features are formed of a first material, the first material either conductive or insulating. A second material is deposited over and between the first material. The second material is either insulating or conductive, opposite the conductivity of the first material. The second material is preferably self-planarizing during deposition. An unpatterned etch is performed to etch the second material and expose the top of the buried features of the first material. The etch is preferably a two-stage etch: The first stage is selective to the second material. When the second material is exposed, the etch chemistry is changed such that the etch is nonselective, etching the first material and the second material at substantially the same rate until the buried features are exposed across the wafer, producing a substantially planar surface.Type: ApplicationFiled: June 30, 2004Publication date: January 5, 2006Applicant: Matrix Semiconductor, Inc.Inventors: Usha Raghuram, Michael Konevecki, Samuel Dunton