Abstract: A microlithographic illumination system can include a light distribution device that can generate a two-dimensional intensity distribution in a first illumination plane. A first raster array of optical raster elements can generates a raster array of secondary light sources. A device with an additional optical effect can be disposed spatially adjacent to the two raster arrays. The device can be configured as an illumination angle variation device. The device can influence the intensity and/or the phase and/or the beam direction of the illumination light. The influence can be such that an intensity contribution of raster elements to the total illumination intensity can vary across the illumination field. This can enable the illumination intensity to be influenced across the illumination field in a defined manner with respect to the total illumination intensity and/or with respect to the intensity contributions from different directions of illumination.

Abstract: First test beams (464a-d), after passing through an optical system on optical paths that differ in pairs, impinge on a first measurement region (461) at angles that differ in pairs with respect to the measurement plane. Second test beams (465a-d), after passing through the optical system on optical paths that differ in pairs, impinge on a second measurement region (462) at angles that differ in pairs, wherein the second region differs from the first. A value of a first measurement variable of the test beam at the first region is detected for each of the first test beams, and comparably for a second measurement variable at the second region for the second test beams. Impingement regions (467a-d) on reference surface(s) (466, 471) of the optical system are determined and a spatial diagnosis distribution of a property of the reference surface(s) for each test beam is calculated.

Abstract: An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

Abstract: An illumination system for a microlithography projection exposure apparatus for illuminating an illumination field with the light from a primary light source has a variably adjustable pupil shaping unit for receiving light from the primary light source and for generating a variably adjustable two-dimensional intensity distribution in a pupil shaping surface of the illumination system. The pupil shaping unit has a Fourier optical system for converting an entrance beam bundle entering through an entrance plane of the Fourier optical system into an exit beam bundle exiting from an exit plane of the Fourier optical system. The Fourier optical system has a focal length fFOS and a structural length L measured between an entrance-side first system surface and an exit-side last system surface along an optical axis, where (L/fFOS)<1/6.

Abstract: The disclosure relates to an optical integrator configured to produce a plurality of secondary light sources in an illumination system of a microlithographic projection exposure apparatus. The disclosure also relates to a method of manufacturing an array of elongated microlenses for use in such an illumination system. Arrays of elongated microlenses are often contained in optical integrators or scattering plates of such illumination systems.

Abstract: An illumination optical unit illuminates an object field using radiation with a first wavelength. The illumination optical unit includes a filter element for suppressing radiation with a second wavelength. The filter element includes at least one component with an obscuring action. As a result of the obscuring action, during operation of the illumination optical unit there is at least one region of reduced intensity of radiation with the first wavelength on a first optical element, arranged downstream of the filter element in the light direction, of the illumination optical unit. The filter element can assume a multiplicity of positions, which lead to different regions of reduced intensity. For each point on an optical used surface of the first optical element, there is at least one position such that the point does not lie in a region of reduced intensity.

Abstract: An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

Abstract: Illumination systems for microlithographic projection exposure apparatus, as well as related systems, components and methods are disclosed. In some embodiments, an illumination system includes one or more scattering structures and an optical integrator that produces a plurality of secondary light sources.

Abstract: Illumination systems for microlithographic projection exposure apparatus, as well as related systems, components and methods are disclosed. In some embodiments, an illumination system includes one or more scattering structures and an optical integrator that produces a plurality of secondary light sources.

Abstract: An illumination system and a projection objective of a mask inspection apparatus are provided. During operation of the mask inspection apparatus, the illumination system illuminates a mask with an illumination bundle of rays having a centroid ray that has a direction dependent on the location of the incidence of the illumination bundle of rays on the mask.

Abstract: An illumination system of a microlithographic projection exposure apparatus has a pupil surface and an essentially flat arrangement of desirably individually drivable beam deviating elements for variable illumination of the pupil surface. Each beam deviating element allows deviation of a projection light beam incident on it to be achieved as a function of a control signal applied to the beam deviating element. A measurement illumination instrument directs a measurement light beam, independent of the projection light beams, onto a beam deviating element. A detector instrument records the measurement light beam after deviation by the beam deviating element. An evaluation unit determines the deviation of the projection light beam from measurement signals provided by the detector instrument.

Abstract: Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.

Abstract: A method includes moving a correction device into a neutral position; subsequently ascertaining, for a given arrangement of imaging light channels in the illumination optical unit of the projection exposure apparatus, intensity distributions of at least some of the individual imaging light partial beams along a transverse coordinate transverse to a displacement direction of an object to be imaged; subsequently ascertaining, in dependence on the transverse coordinate, an actual variation of actual values of structure image sizes of object structures in an image field, onto which the object is imaged; and subsequently specifying a predetermined variation of the structure image sizes over the transverse coordinate and displacing correction elements of the correction device, starting from the neutral position, such that the actual variation matches the predetermined variation within a tolerance bandwidth. The method can provide improved imaging results as compared to known uniformity adjustment.

Abstract: An optical system for generating a light beam for treating a substrate arranged in a substrate plane is disclosed. The optical system includes first and second optical arrangements.

Abstract: An EUV collector for collecting and transmitting radiation from an EUV radiation source includes at least one collector mirror for reflecting an emission of the EUV radiation source, which is rotationally symmetric with respect to a central axis. The EUV collector also includes a cooling device for cooling the at least one collector mirror. The cooling device has at least one cooling element, which has a course with respect to the collector mirror, in each case, such that the projection of the course into a plane perpendicular to the central axis has a main direction, which encloses an angle of at most 20° with respect to a predetermined preferred direction. The collector transmits improved quality radiation to illuminate an object field.

Abstract: An illumination system for EUV microlithography includes an EUV light source which generates EUV illumination light with an etendue that is higher than 0.01 mm2. The EUV light source generates a sequence of EUV light pulses having a pulse sequence frequency. An illumination optics of the illumination system is used to guide the illumination light from the light source to an object field. At least one optical modulation component of the illumination system is preferably modulatable synchronously with the pulse sequence frequency. The result is an illumination system where a homogeneity of an object field illumination is improved.

Abstract: An illumination system for a microlithography projection exposure apparatus for illuminating an illumination field with the light from a primary light source has a variably adjustable pupil shaping unit for receiving light from the primary light source and for generating a variably adjustable two-dimensional intensity distribution in a pupil shaping surface of the illumination system. The pupil shaping unit has a Fourier optical system for converting an entrance beam bundle entering through an entrance plane of the Fourier optical system into an exit beam bundle exiting from an exit plane of the Fourier optical system. The Fourier optical system has a focal length fFOS and a structural length L measured between an entrance-side first system surface and an exit-side last system surface along an optical axis, where (L/fFOS)<1/6.

Abstract: A component for setting a scan-integrated illumination energy in an object plane of a microlithography projection exposure apparatus is disclosed. The component includes a plurality of diaphragms which are arranged alongside one another with respect to a direction perpendicular to the scan movement and which differ in their form and the position of which can be altered approximately in the scan direction so that a portion of the illumination energy can be vignetted by at least one diaphragm. The form of the individual diaphragm is specifically adapted to the form of the illumination in a diaphragm plane in which the component is arranged. This has the effect that at least parts of the delimiting edges of two diaphragms always differ in the case of an arbitrary displacement of the diaphragms.

Abstract: The disclosure relates to an optical integrator configured to produce a plurality of secondary light sources in an illumination system of a microlithographic projection exposure apparatus. The disclosure also relates to a method of manufacturing an array of elongated microlenses for use in such an illumination system. Arrays of elongated microlenses are often contained in optical integrators or scattering plates of such illumination systems.

Abstract: The disclosure relates to an optical integrator configured to produce a plurality of secondary light sources in an illumination system of a microlithographic projection exposure apparatus. The disclosure also relates to a method of manufacturing an array of elongated microlenses for use in such an illumination system. Arrays of elongated microlenses are often contained in optical integrators or scattering plates of such illumination systems.