Abstract: Embodiments herein provide polishing pads that produce high post-polish planarity, such as on a wafer substrate or other substrates. Exemplary pads include a bulk matrix and embedded polymer particles. Pads according to embodiments herein may be used to remove material over a composite substrate, comprised of two or more different materials, or a substrate comprised of a single material.

Abstract: A method may include receiving a primary resource in a user device, wherein the resource includes a plurality of addresses and each of the plurality of addresses identifying one of a plurality of additional resources. The method may further include aggregating the plurality of addresses and sending the aggregated addresses to a network device. The method may further include receiving the additional resources in the user device.

Abstract: Embodiments herein provide polishing pads that produce high post-polish planarity, such as on a wafer substrate or other substrates. Exemplary pads include a bulk matrix and embedded polymer particles. Pads according to embodiments herein may be used to remove material over a composite substrate, comprised of two or more different materials, or a substrate comprised of a single material.

Abstract: A device receives, from a user device, a request to use a visual voicemail (VVM) application, directs the user device to a self provisioning server based on the request, and receives, from the self provisioning server, a selected VVM subscription plan and information associated with a user of the user device. The device also provides, to a billing system, a feature code associated with the selected VVM subscription plan, receives, from one or more voicemail servers, pre-existing voicemail messages associated with the user, and provides, to the user device, the pre-existing voicemail messages.

Abstract: Method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of abrasive particles which contact the wafer surface in combination with a reactive liquid solution essentially free of abrasive particles wherein the ionic strength of the solution is changed to effect a change in polishing.

Abstract: A method of making a polishing pad composition comprising a high modulus phase component and a low modulus phase component, and a method of polishing a semiconductor substrate by creating nanoasperities at a polishing interface between the polishing layer and the wafer during polishing by providing the high modulus phase component at the polishing interface, either as protrusions from the polishing layer, or by being released from the polishing layer into the polishing interface.

Abstract: A carrier head assembly of a substrate polishing apparatus and a substrate supporting carrier pad is disclosed. A down force is uniformly distributed over the backside of the substrate by the carrier pad adapted to be internally pressurized by the down force.

Abstract: A semiconductor wafer has, an underlying dielectric layer with non-planarity features at its surface due to damascene topology, and a successive dielectric layer that is without damascene topology overlying the first dielectric layer, the successive dielectric layer having a smooth polished planar surface that minimizes cumulative non-planarity. The surface is polished by chemical-mechanical planarization with a reactive liquid borne by an aqueous polishing fluid applied at an interface of the successive dielectric layer and a polishing pad.

Abstract: A chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices or the like. The invention is directed to a polishing pad composition comprising a high modulus phase component and a low modulus phase component. The multi-phase polishing pads are very efficient and effective in providing high performance polishing along an entire polishing surface interface.

Abstract: A carrier head assembly of a substrate polishing apparatus and a substrate supporting carrier pad is disclosed. A down force is uniformly distributed over the backside of the substrate by the carrier pad adapted to be internally pressurized by the down force.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution which may be recirculated, analyzed, adjusted, and from which soluble reaction products may be removed.

Abstract: A fixed abrasive, chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices, memory disks or the like.

Abstract: Method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of abrasive particles which contact the wafer surface in combination with a reactive liquid solution essentially free of abrasive particles wherein the ionic strength of the solution is changed to effect a change in polishing.

Abstract: A method of manufacturing semiconductor devices or precursors to semiconductor devices by hydrophobically modifying a device layer to thereby decrease the rate of polishing of the layer by at least 15%. The hydrophobically modified layer can be used as a stop layer to thereby allow for improved planarization of at least one layer of the device.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.

Abstract: A method is provided for polishing a composite comprised of silica and silicon nitride wherein a polishing composition is used comprising: an aqueous medium, abrasive particles, a surfactant, an organic polymer viscosity modifier which increases the viscosity of the composition, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: A chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices or the like. The invention is directed to a self-dressing, polishing pad comprising a high modulus phase and a low modulus phase. The multi-phase polishing pads are very efficient and effective in providing high performance polishing along an entire polishing surface interface.

Abstract: A method and apparatus for polishing a thin film formed on a semiconductor substrate. A table covered with a polishing pad is orbited about an axis. Slurry is fed through a plurality of spaced-apart holes formed through the polishing pad to uniformly distribute slurry across the pad surface during polishing. A substrate is pressed face down against the orbiting pad's surface and rotated to facilitate, along with the slurry, the polishing of the thin film formed on the substrate.