Abstract: A fixed abrasive, chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices, memory disks or the like.

Abstract: A method and apparatus for polishing a thin film formed on a semiconductor substrate. A table covered with a polishing pad is orbited about an axis. Slurry is delivered through a plurality of spaced-apart holes formed through the polishing pad to uniformly distribute slurry across the pad surface during polishing. Slurry extraction holes are interspersed between the slurry delivery holes to facilitate the removal of slurry from the polishing pad surface. A substrate is pressed face down against the orbiting pad's surface and rotated to facilitate, along with the slurry, the polishing of the thin film formed on the substrate.

Abstract: A method and apparatus for polishing a thin film formed on a semiconductor substrate. A table covered with a polishing pad is orbited about an axis. Slurry is fed through a plurality of spaced-apart holes formed through the polishing pad to uniformly distribute slurry across the pad surface during polishing. A substrate is pressed face down against the orbiting pad's surface and rotated to facilitate, along with the slurry, the polishing of the thin film formed on the substrate.

Abstract: An improved composite polishing pad includes a first layer of elastic material, a second, stiff layer and a third layer optimized for slurry transport. This third layer is the layer against which the wafer makes contact during the polishing process. The second layer is segmented into individual sections physically isolated from one another in the lateral dimension. Each segmented section is resilient across its width yet cushioned by the first layer in the vertical direction. The physical isolation of each section combined with the cushioning of the first layer of material create a sort of "bedspring" effect which enables the pad to conform to longitudinal gradations across the wafer.