Abstract: A method for forming features on a wafer that includes forming a first opening in a first layer over a layer including carbon and removing material of the layer including carbon through the first opening to form a cavity. The method includes forming spacer material on the sidewalls of the layer including carbon in the cavity with a material forming process, wherein the spacer material is inhibited from forming on the bottom surface portion of the cavity during the material forming process. The formed spacer material formed a spacer that defines a second opening that is has a smaller lateral dimension in a first lateral direction than the first opening.

Abstract: An integrated circuit includes a dielectric layer located over one or more metal interconnect layers. The dielectric layer includes selective regions of implanted stress-setting dopants to provide different stress profiles in the dielectric layer to counteract the stress imparted from package structures. Accordingly, the effect of the stress imparted by package structures in a substrate can be negated by the placement of stress-setting dopants in selective areas of the dielectric layer.

Abstract: A back-end-of-line integrated circuit is formed on an integrated circuit structure having one or more polymer interlayer dielectric (ILD) layers formed over a first conductive wiring line layer by selectively processing an exposed portion of the one or more polymer ILD layers with application irradiation from a laser or light source to form a graphene interconnect structure in the one or more polymer ILD layers which is directly, electrically connected to the first conductive wiring line layer.

Abstract: A back-end-of-line integrated circuit interconnect device is formed on an integrated circuit structure having a first dielectric layer formed over a first conductive contact layer by forming an interconnect opening in the first dielectric layer which exposes at least a portion of the first conductive contact layer, filling the interconnect opening in the first dielectric layer with one or more polyimide layers in contact the first conductive contact layer; and applying a laser light source to directly convert the one or more polyimide layers to form a graphene interconnect structure in the first dielectric layer which is directly, electrically connected to the first conductive contact layer.

Abstract: An integrated circuit includes a compressive stressor and a tensile stressor, each located directly over an active region of a transistor, where a portion of the compressive stressor and a portion of the tensile stressor directly overlap with each other. In some embodiments, utilizing a compressive stressor and tensile stressor located directly over an active region with overlapping portions may allow for an adjustment of the stress applied to a channel region of a transistor to compensate for stress imparted by package structures.

Abstract: A sample carrier includes a bottom, at least one side wall, and a contact face for receiving a sample. The side wall extends upward relative to the bottom. A circumferential rim is provided on the contact face. The sample carrier can be used in a sample handling system which includes a counterpart support element and a sample storage for receiving the sample carrier. Multiple sample storages are combined to sample storage rails with can be arranged on a sample storage shelf. The sample carrier can be part of a system for performing thermomechanical analysis, including the sample handling system while the samples, arranged in the sample carriers, are stored in the sample storages of the sample storage rails arranged in the sample storage shelves from where they are transported to the sample support with the help of the counterpart support element.

Abstract: A steering apparatus may comprise a steering collar, a first linear actuator, a first drive gear, a crankshaft, and a sun gear, wherein the sun gear is disposed within the collar, wherein the first drive gear is fixed to the crankshaft and coupled to the sun gear such that the collar rotates about the sun gear in response to rotation of the crankshaft, wherein the first linear actuator is coupled between the crankshaft and the collar.

Abstract: A nose-wheel steering system is disclosed. In various embodiments, the system includes an actuator; a strut; and a gearing mechanism operably coupling the actuator to the strut, the gearing mechanism including a steering collar attached to the strut, and idler gear engaged with the actuator and a pinion having a first gear engaged with the idler gear and a second gear engaged with the steering collar.

Abstract: Aspects of the current subject matter can include systems, devices and methods related to embodiments of a respiratory valve apparatus. The respiratory valve apparatus can include a first port configured to couple to a ventilator, a second port configured to couple to a resuscitation bag or a transport ventilator, a third port configured to couple to an endotracheal tube, and a piston within a housing of the respiratory valve apparatus. The piston can include a first flow pathway that allows fluid flow between the first and third ports when in the first position and a second flow pathway that allows fluid flow between the second and third ports when in a second position. The piston can prevent fluid flow between the second and third ports when in the first position and prevent fluid flow between the first and third ports when in the second position.

Abstract: A steering apparatus may comprise a steering collar, a first linear actuator, a first drive gear, a crankshaft, and a sun gear, wherein the sun gear is disposed within the collar, wherein the first drive gear is fixed to the crankshaft and coupled to the sun gear such that the collar rotates about the sun gear in response to rotation of the crankshaft, wherein the first linear actuator is coupled between the crankshaft and the collar.

Abstract: Wafer processing techniques, or methods for forming semiconductor rides, are disclosed for fabricating plated pillar dies having die-level electromagnetic interference (EMI) shield layers. In embodiments, the method includes depositing a metallic seed layer over a semiconductor wafer and contacting die pads thereon. An electroplating process is then performed to compile plated pillars on the metallic seed layer and across the semiconductor wafer. Following electroplating, selected regions of the metallic seed layer are removed to produce electrical isolation gaps around a first pillar type, while leaving intact portions of the metallic seed layer to yield a wafer-level EMI shield layer. The semiconductor wafer is separated into singulated plated pillar dies, each including a die-level EMI shield layer and plated pillars of the first pillar type electrically isolated from the EMI shield layer.

Abstract: Wafer processing techniques, or methods for forming semiconductor rides, are disclosed for fabricating plated pillar dies having die-level electromagnetic interference (EMI) shield layers. In embodiments, the method includes depositing a metallic seed layer over a semiconductor wafer and contacting die pads thereon. An electroplating process is then performed to compile plated pillars on the metallic seed layer and across the semiconductor wafer. Following electroplating, selected regions of the metallic seed layer are removed to produce electrical isolation gaps around a first pillar type, while leaving intact portions of the metallic seed layer to yield a wafer-level EMI shield layer. The semiconductor wafer is separated into singulated plated pillar dies, each including a die-level EMI shield layer and plated pillars of the first pillar type electrically isolated from the EMI shield layer.

Abstract: A nose-wheel steering system is disclosed. In various embodiments, the system includes an actuator; a strut; and a gearing mechanism operably coupling the actuator to the strut, the gearing mechanism including a steering collar attached to the strut, and idler gear engaged with the actuator and a pinion having a first gear engaged with the idler gear and a second gear engaged with the steering collar.

Abstract: A steering system may include a gear assembly and a collar. The gear assembly may include a planet carrier, a planet gear, an internal ring gear, and a sun gear. The planet gear may be disposed between the internal ring gear and the sun gear. The gear assembly may provide a mechanical advantage to the steering system, which may result in a greater powered steering range, a shorter rack assembly, and/or increased design space relative to typical steering systems.

Abstract: A steering system may include a gear assembly and a collar. The gear assembly may include a planet carrier, a planet gear, an internal ring gear, and a sun gear. The planet gear may be disposed between the internal ring gear and the sun gear. The gear assembly may provide a mechanical advantage to the steering system, which may result in a greater powered steering range, a shorter rack assembly, and/or increased design space relative to typical steering systems.

Abstract: A method of making a semiconductor device with an air gap for a terminal of a semiconductor device includes forming a sacrificial sidewall spacer and removing the spacer after the formation of contact structures for the semiconductor device. The air gap is located in portions of the wafer where the sacrificial air gap was removed. Since the contacts are formed prior to the removal of the sacrificial spacers, air gaps can advantageously be formed without electrically conductive contact material undesirably being deposited in locations of the desired air gap.

Abstract: A locking actuator arrangement may comprise an actuator housing defining a retaining cavity, an actuator piston comprising a piston head and a piston rod extending from the piston head, a receptacle body defining a receiving cavity, wherein the receiving cavity is configured to receive at least a portion of the piston rod, and the piston rod is configured to be received by the receiving cavity in response to alignment of at least two coupled links.

Abstract: A method of making a semiconductor device with an air gap for a terminal of a semiconductor device includes forming a sacrificial sidewall spacer and removing the spacer after the formation of contact structures for the semiconductor device. The air gap is located in portions of the wafer where the sacrificial air gap was removed. Since the contacts are formed prior to the removal of the sacrificial spacers, air gaps can advantageously be formed without electrically conductive contact material undesirably being deposited in locations of the desired air gap.

Abstract: A multigate transistor is formed on a wafer with a first material and a second material. Portions of the second material are selectively removed from the first material to form an opening in the first material. An epitaxially grown semiconductor material is grown from a seed layer into the opening. A portion of the first material is removed around the epitaxially grown semiconductor material in the opening and a gate material is formed in locations of the removed first material. The epitaxially grown semiconductor material in the opening serves as a channel region for a multigate transistor and the gate material serves as a gate for the multigate transistor.

Abstract: A multigate transistor is formed on a wafer with a first material and a second material. Portions of the second material are selectively removed from the first material to form an opening in the first material. An epitaxially grown semiconductor material is grown from a seed layer into the opening. A portion of the first material is removed around the epitaxially grown semiconductor material in the opening and a gate material is formed in locations of the removed first material. The epitaxially grown semiconductor material in the opening serves as a channel region for a multigate transistor and the gate material serves as a gate for the multigate transistor.